WO2009048076A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
WO2009048076A1
WO2009048076A1 PCT/JP2008/068299 JP2008068299W WO2009048076A1 WO 2009048076 A1 WO2009048076 A1 WO 2009048076A1 JP 2008068299 W JP2008068299 W JP 2008068299W WO 2009048076 A1 WO2009048076 A1 WO 2009048076A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
emitting element
semiconductor
semiconductor layer
Prior art date
Application number
PCT/JP2008/068299
Other languages
English (en)
French (fr)
Inventor
Jun Okamoto
Kazutaka Ise
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Publication of WO2009048076A1 publication Critical patent/WO2009048076A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

【課題】光の取り出し効率及び正面輝度が高い２層スタック構造の半導体発光装置を提供する。 【解決手段】配線基板１と、配線基板１上に実装された第１半導体発光素子１１と、第１半導体発光素子１１上に実装された第２半導体発光素子２１とを備える。第１及び第２の半導体発光素子１１，２１は、透光性基板１１ａ，２１ａと、当該透光性基板上に形成された半導体層１１ｂ，２１ｂとを有し、第１半導体発光素子１１は、半導体層１１ｂを上向きにして配線基板１上に実装し、第２半導体発光素子２１は、半導体層２１ｂを下向きにして第１半導体発光素子１１上に実装する。第２半導体発光素子２１の半導体層２１ｂは、その側面形状が、第１半導体発光素子１１の半導体層１１ｂから放射された光を屈折して、第２半導体発光素子２１の透光性基板２１ａ内に入射させる方向に傾斜する傾斜面に形成する。半導体層とサファイア基板の接合面は、研磨面でも粗面でも良い。
PCT/JP2008/068299 2007-10-09 2008-10-08 半導体発光装置 WO2009048076A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-263632 2007-10-09
JP2007263632 2007-10-09

Publications (1)

Publication Number Publication Date
WO2009048076A1 true WO2009048076A1 (ja) 2009-04-16

Family

ID=40549220

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068299 WO2009048076A1 (ja) 2007-10-09 2008-10-08 半導体発光装置

Country Status (1)

Country Link
WO (1) WO2009048076A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013083819A1 (de) * 2011-12-07 2013-06-13 Osram Gmbh Leuchtdiodenanordnung
JP2017522734A (ja) * 2014-07-18 2017-08-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 自動車アプリケーションのためのｌｅｄ光源

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004134803A (ja) * 2002-10-10 2004-04-30 Agilent Technol Inc フリップチップ型発光ダイオードのチップ形状
WO2005008792A1 (ja) * 2003-07-18 2005-01-27 Sanyo Electric Co., Ltd. 発光ダイオード
JP2006147787A (ja) * 2004-11-18 2006-06-08 Sony Corp 発光素子及びその製造方法
JP2006253670A (ja) * 2005-02-14 2006-09-21 Showa Denko Kk 窒化物半導体発光素子及びその製造方法
JP2007073998A (ja) * 2000-08-11 2007-03-22 Osram Opto Semiconductors Gmbh 発光半導体チップ
JP2007115928A (ja) * 2005-10-20 2007-05-10 Citizen Electronics Co Ltd 半導体発光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073998A (ja) * 2000-08-11 2007-03-22 Osram Opto Semiconductors Gmbh 発光半導体チップ
JP2004134803A (ja) * 2002-10-10 2004-04-30 Agilent Technol Inc フリップチップ型発光ダイオードのチップ形状
WO2005008792A1 (ja) * 2003-07-18 2005-01-27 Sanyo Electric Co., Ltd. 発光ダイオード
JP2006147787A (ja) * 2004-11-18 2006-06-08 Sony Corp 発光素子及びその製造方法
JP2006253670A (ja) * 2005-02-14 2006-09-21 Showa Denko Kk 窒化物半導体発光素子及びその製造方法
JP2007115928A (ja) * 2005-10-20 2007-05-10 Citizen Electronics Co Ltd 半導体発光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013083819A1 (de) * 2011-12-07 2013-06-13 Osram Gmbh Leuchtdiodenanordnung
JP2017522734A (ja) * 2014-07-18 2017-08-10 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 自動車アプリケーションのためのｌｅｄ光源

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