JP6810927B2 - 発光素子パッケージ及びこれを含む照明装置 - Google Patents
発光素子パッケージ及びこれを含む照明装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 85
- 239000000126 substance Substances 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 31
- 229910000679 solder Inorganic materials 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 297
- 239000000463 material Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052791 calcium Inorganic materials 0.000 description 6
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052712 strontium Inorganic materials 0.000 description 6
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910019897 RuOx Inorganic materials 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910003564 SiAlON Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
)又は下(下方)(on or under)”に形成されると記載される場合において、“上(上方)又は下(下方)(on or under)”は、二つの構成要素(element)が互いに直接(directly)接触したり、一つ以上の他の構成要素(element)が前記二つの構成要素(element)の間に配置されて(indirectly)形成されることをすべて含む。また、“上(上方)又は下(下方)(on or under)”と表現される場合、一つの構成要素(element)を基準にして上側方向のみならず、下側方向の意味も含むことができる。
Claims (18)
- 基板と、
前記基板の下に配置され、第1導電型半導体層、活性層及び第2導電型半導体層を含む発光構造物と、
複数のコンタクトホールを介して露出された前記第1導電型半導体層と連結された第1電極と、
前記第2導電型半導体層と連結された第2電極と、
前記発光構造物の下から前記発光構造物の側部と前記第1電極との間の空間まで延長されて配置されて光を反射させる第1絶縁層と、
前記第1絶縁層の下に配置され、前記第1電極全体の下に配置された反射層とを含み、
前記反射層は前記発光構造物が前記基板と対向する第1方向に前記複数のコンタクトホールの全てと重畳し、前記第2電極の下までさらに延びて配置され、
前記第1絶縁層は、
前記発光構造物の下に配置される第1部分と、
前記第1電極と前記発光構造物の側部との間に配置され、前記第1部分から延びる第2部分とを含み、
前記第1絶縁層の前記第1部分及び第2部分のそれぞれは分散ブラッグ反射層を含み、
前記第1絶縁層の前記第1部分は前記第2電極の下に配置され、前記第1方向に第1厚さを有し、
前記第1絶縁層の前記第2部分は前記コンタクトホール内で前記第1方向と交差する第2方向に第2厚さを有し、前記第1厚さは前記第2厚さと違い、
前記反射層は、
前記第1電極と連結され、前記第1方向に前記第1絶縁層の前記第2部分と重畳する第1部分と、
前記反射層の前記第1部分から前記第2方向に延び、前記第2電極によって覆われないで露出された前記第2導電型半導体層の下面及び前記第1絶縁層の前記第1部分と前記第1方向に重畳する第2部分と、
前記第2方向に前記反射層の前記第2部分から延び、前記第2電極及び前記第1絶縁層の前記第1部分と前記第1方向に重畳し、前記反射層の端部に相当する第3部分とを含む、発光素子パッケージ。 - 前記反射層は、前記第1電極の下までさらに延びて配置された、請求項1に記載の発光素子パッケージ。
- 前記第1及び第2電極とそれぞれ連結された第1及び第2パッドと、
前記反射層と前記第2パッドとの間に配置された第2絶縁層をさらに含む、請求項1又は2に記載の発光素子パッケージ。 - 前記第2電極はAgを含み、前記第2絶縁層はSiO2を含む、請求項3に記載の発光素子パッケージ。
- 前記第2絶縁層は分散ブラッグ反射層を含む、請求項3又は請求項4に記載の発光素子パッケージ。
- 前記第1パッドは、前記反射層と連結された、請求項3に記載の発光素子パッケージ。
- 前記第1電極、前記反射層または前記第1パッドのうち少なくとも二つは、同一の物質を含む、請求項3乃至6のいずれか1項に記載の発光素子パッケージ。
- 前記第1絶縁層の前記第2部分は前記コンタクトホール内で前記第1電極の両側に接して配置された断面形状を有する、請求項1乃至7のいずれか一項に記載の発光素子パッケージ。
- 前記第2絶縁層は前記第2電極及び前記第1絶縁層の前記第1部分と前記第1方向に重畳する、請求項3乃至7のいずれか一項に記載の発光素子パッケージ。
- 前記第1絶縁層の前記第2部分と前記発光構造物の側部間の空間から前記発光構造物の下部まで延長されて配置されたパッシベーション層をさらに含む、請求項1乃至9のいずれか1項に記載の発光素子パッケージ。
- 前記第2厚さは、前記第1厚さより薄い、請求項1乃至10のいずれか一項に記載の発光素子パッケージ。
- 前記第2電極と重畳する前記反射層の前記第3部分の幅の最小値は、2umである、請求項1乃至11のいずれか一項に記載の発光素子パッケージ。
- 前記反射層の前記第3部分は、前記発光構造物と前記第1方向に重畳する、請求項1乃至12のいずれか一項に記載の発光素子パッケージ。
- 前記反射層の厚さは100nm乃至500nmである、請求項1乃至13のいずれか1項に記載の発光素子パッケージ。
- 前記第2電極の厚さは100nm乃至1000nmである、請求項1乃至14のいずれか1項に記載の発光素子パッケージ。
- 前記第1及び第2パッドとそれぞれ連結され、電気的に互いに離隔された第1及び第2はんだ部と、
前記第1及び第2はんだ部にそれぞれ連結され、電気的に互いに離隔された第1及び第2リードフレームをさらに含む、請求項3乃至7及び請求項9のいずれか1項に記載の発光素子パッケージ。 - 前記第1及び第2リードフレームと共にキャビティを形成するパッケージ本体をさらに含み、
前記基板と、前記発光構造物と、前記第1電極と、前記第2電極と、前記第1絶縁層と前記反射層は前記キャビティに配置された、請求項16に記載の発光素子パッケージ。 - 請求項1乃至17のいずれか1項に記載の発光素子パッケージを含む、照明装置。
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KR1020150026969A KR101669122B1 (ko) | 2015-02-26 | 2015-02-26 | 발광 소자 패키지 |
KR10-2015-0026969 | 2015-02-26 |
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JP2016163045A JP2016163045A (ja) | 2016-09-05 |
JP2016163045A5 JP2016163045A5 (ja) | 2019-04-04 |
JP6810927B2 true JP6810927B2 (ja) | 2021-01-13 |
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US (1) | US10109772B2 (ja) |
EP (1) | EP3062355A1 (ja) |
JP (1) | JP6810927B2 (ja) |
KR (1) | KR101669122B1 (ja) |
CN (1) | CN105932134B (ja) |
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US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
CN205944139U (zh) * | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
US9666546B1 (en) * | 2016-04-28 | 2017-05-30 | Infineon Technologies Ag | Multi-layer metal pads |
TWI778010B (zh) | 2017-01-26 | 2022-09-21 | 晶元光電股份有限公司 | 發光元件 |
CN107910420A (zh) * | 2017-12-19 | 2018-04-13 | 扬州科讯威半导体有限公司 | 一种紫外发光二极管及制备方法 |
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JP2013021175A (ja) * | 2011-07-12 | 2013-01-31 | Toshiba Corp | 半導体発光素子 |
KR101276053B1 (ko) * | 2011-07-22 | 2013-06-17 | 삼성전자주식회사 | 반도체 발광소자 및 발광장치 |
JP5953155B2 (ja) | 2012-02-24 | 2016-07-20 | スタンレー電気株式会社 | 半導体発光装置 |
US20130292719A1 (en) * | 2012-05-04 | 2013-11-07 | Chi Mei Lighting Technology Corp. | Light-emitting diode structure and method for manufacturing the same |
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JP2014096539A (ja) | 2012-11-12 | 2014-05-22 | Tokuyama Corp | 紫外発光素子、および発光構造体 |
US9482410B2 (en) * | 2012-12-11 | 2016-11-01 | Samsung Electronics Co., Ltd. | Light emitting module and surface lighting device having the same |
JP2014150196A (ja) * | 2013-02-01 | 2014-08-21 | Toshiba Corp | 半導体発光装置およびその製造方法 |
US20150008465A1 (en) * | 2013-07-08 | 2015-01-08 | Invenlux Corporation | Reflective electrode structure, light emitting device and package |
KR102162437B1 (ko) * | 2014-05-15 | 2020-10-07 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 패키지 |
-
2015
- 2015-02-26 KR KR1020150026969A patent/KR101669122B1/ko active IP Right Grant
-
2016
- 2016-02-22 EP EP16156737.5A patent/EP3062355A1/en not_active Withdrawn
- 2016-02-25 JP JP2016034334A patent/JP6810927B2/ja active Active
- 2016-02-25 US US15/053,559 patent/US10109772B2/en active Active
- 2016-02-26 CN CN201610109347.9A patent/CN105932134B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20160104233A (ko) | 2016-09-05 |
EP3062355A1 (en) | 2016-08-31 |
CN105932134A (zh) | 2016-09-07 |
JP2016163045A (ja) | 2016-09-05 |
CN105932134B (zh) | 2020-03-10 |
US20160254414A1 (en) | 2016-09-01 |
KR101669122B1 (ko) | 2016-10-25 |
US10109772B2 (en) | 2018-10-23 |
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