JP2004362761A - 半導体メモリ装置及びそのプログラミング方法 - Google Patents

半導体メモリ装置及びそのプログラミング方法 Download PDF

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Publication number
JP2004362761A
JP2004362761A JP2004166016A JP2004166016A JP2004362761A JP 2004362761 A JP2004362761 A JP 2004362761A JP 2004166016 A JP2004166016 A JP 2004166016A JP 2004166016 A JP2004166016 A JP 2004166016A JP 2004362761 A JP2004362761 A JP 2004362761A
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Prior art keywords
memory device
state
bit line
control signal
voltage
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Pending
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JP2004166016A
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Japanese (ja)
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JP2004362761A5 (https=
Inventor
Woo-Yeong Cho
趙佑榮
Kyung-Hee Kim
金敬▲姫▼
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020030035564A external-priority patent/KR100546328B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2004362761A publication Critical patent/JP2004362761A/ja
Publication of JP2004362761A5 publication Critical patent/JP2004362761A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0061—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G11C2013/0066—Verify correct writing whilst writing is in progress, e.g. by detecting onset or cessation of current flow in cell and using the detector output to terminate writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP2004166016A 2003-06-03 2004-06-03 半導体メモリ装置及びそのプログラミング方法 Pending JP2004362761A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020030035564A KR100546328B1 (ko) 2003-06-03 2003-06-03 상 변화 메모리 장치로 인가되는 펄스 폭 자동 제어 방법및 장치
US10/773,901 US7085154B2 (en) 2003-06-03 2004-02-06 Device and method for pulse width control in a phase change memory device

Publications (2)

Publication Number Publication Date
JP2004362761A true JP2004362761A (ja) 2004-12-24
JP2004362761A5 JP2004362761A5 (https=) 2007-06-14

Family

ID=36815433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004166016A Pending JP2004362761A (ja) 2003-06-03 2004-06-03 半導体メモリ装置及びそのプログラミング方法

Country Status (5)

Country Link
US (2) US7085154B2 (https=)
JP (1) JP2004362761A (https=)
CN (1) CN100514492C (https=)
DE (1) DE102004025975B4 (https=)
IT (1) ITMI20041046A1 (https=)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006277822A (ja) * 2005-03-29 2006-10-12 Nec Corp 磁気ランダムアクセスメモリ及びその動作方法
JP2007123908A (ja) * 2005-10-28 2007-05-17 Samsung Electronics Co Ltd 相変化メモリ素子、その動作及び製造方法
JP2007207412A (ja) * 2006-01-03 2007-08-16 Qimonda Ag 抵抗メモリのための書き込み回路
JP2009157982A (ja) * 2007-12-26 2009-07-16 Toshiba Corp 不揮発性半導体記憶装置
US7580277B2 (en) 2005-01-19 2009-08-25 Elpida Memory, Inc. Memory device including a programmable resistance element
JP2010218603A (ja) * 2009-03-13 2010-09-30 Sharp Corp 不揮発性可変抵抗素子のフォーミング処理の制御回路、並びにフォーミング処理の制御方法
JP2011526401A (ja) * 2008-06-27 2011-10-06 サンディスク スリーディー，エルエルシー 不揮発性記憶における同時書込みと検証
JP2011526403A (ja) * 2008-06-27 2011-10-06 サンディスク スリーディー，エルエルシー 不揮発性記憶用の短いリセットパルス
JP2011253595A (ja) * 2010-06-03 2011-12-15 Toshiba Corp 不揮発性半導体記憶装置
JP2012504839A (ja) * 2008-10-06 2012-02-23 サンディスク スリーディー，エルエルシー 可逆的抵抗スイッチングメモリ材料用のセット及びリセット検出回路
US8139404B2 (en) 2009-04-03 2012-03-20 Elpida Memory, Inc. Semiconductor memory device
US8456913B2 (en) 2010-09-03 2013-06-04 SK Hynix Inc. Semiconductor memory apparatus and method for controlling programming current pulse
KR101284527B1 (ko) 2010-09-23 2013-07-16 마이크론 테크놀로지, 인크. 역치 에지 검출을 이용한 상 변화 메모리 상태 판정
JP2014529838A (ja) * 2011-08-18 2014-11-13 マイクロン テクノロジー，インク． 回路においてスナップバック事象を検知するための装置、デバイスおよび方法
US9312003B2 (en) 2013-09-18 2016-04-12 Kabushiki Kaisha Toshiba Semiconductor memory device and method of performing setting operation in semiconductor memory device
US10855087B1 (en) 2004-01-15 2020-12-01 Comarco Wireless Systems Llc Power supply systems

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
US7085154B2 (en) * 2003-06-03 2006-08-01 Samsung Electronics Co., Ltd. Device and method for pulse width control in a phase change memory device
US7159181B2 (en) * 2003-10-01 2007-01-02 Sunrise Medical Hhg Inc. Control system with customizable menu structure for personal mobility vehicle
KR100618836B1 (ko) 2004-06-19 2006-09-08 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 프로그래밍방법
TWI288931B (en) 2004-06-19 2007-10-21 Samsung Electronics Co Ltd Phase-change memory element driver circuits using measurement to control current and methods of controlling drive current of phase-change memory elements using measurement
WO2006043230A1 (en) * 2004-10-21 2006-04-27 Koninklijke Philips Electronics N.V. Integrated circuit with phase-change memory cells and method for addressing phase-change memory cells
KR100564637B1 (ko) * 2004-10-26 2006-03-29 삼성전자주식회사 반도체 메모리 장치와 그 프로그래밍 방법
US7272037B2 (en) * 2004-10-29 2007-09-18 Macronix International Co., Ltd. Method for programming a multilevel phase change memory device
JP4646634B2 (ja) * 2005-01-05 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
US7923724B2 (en) * 2005-01-10 2011-04-12 Ovonyx, Inc. Phase change memory that switches between crystalline phases
KR100699837B1 (ko) * 2005-04-04 2007-03-27 삼성전자주식회사 반도체 메모리 장치 및 반도체 메모리 장치의 프로그래밍방법
EP2249351B1 (en) * 2005-06-03 2013-05-01 STMicroelectronics Srl Method for multilevel programming of phase change memory cells using a percolation algorithm
KR100794654B1 (ko) * 2005-07-06 2008-01-14 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법
KR100674983B1 (ko) * 2005-07-13 2007-01-29 삼성전자주식회사 구동전압 레벨을 변경할 수 있는 상 변화 메모리 장치
US20070025166A1 (en) * 2005-07-27 2007-02-01 Spansion Llc Program/erase waveshaping control to increase data retention of a memory cell
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
US7372725B2 (en) * 2005-08-15 2008-05-13 Infineon Technologies Ag Integrated circuit having resistive memory
KR100674992B1 (ko) * 2005-09-08 2007-01-29 삼성전자주식회사 구동전압 레벨을 변경할 수 있는 상 변화 메모리 장치
KR100695162B1 (ko) * 2005-09-13 2007-03-14 삼성전자주식회사 상변화 메모리 및 그 동작 방법
CN101180683B (zh) * 2005-09-21 2010-05-26 株式会社瑞萨科技 半导体器件
KR100674997B1 (ko) * 2005-10-15 2007-01-29 삼성전자주식회사 상 변화 메모리 장치 및 상 변화 메모리 장치의 독출 동작제어방법
CN101292299B (zh) * 2005-10-17 2013-02-06 瑞萨电子株式会社 半导体器件
US8222917B2 (en) * 2005-11-03 2012-07-17 Agate Logic, Inc. Impedance matching and trimming apparatuses and methods using programmable resistance devices
KR100745600B1 (ko) * 2005-11-07 2007-08-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 읽기 방법
US7423901B2 (en) * 2006-03-03 2008-09-09 Marvell World Trade, Ltd. Calibration system for writing and reading multiple states into phase change memory
US7626858B2 (en) * 2006-06-09 2009-12-01 Qimonda North America Corp. Integrated circuit having a precharging circuit
US7457146B2 (en) * 2006-06-19 2008-11-25 Qimonda North America Corp. Memory cell programmed using a temperature controlled set pulse
US20080025080A1 (en) * 2006-07-27 2008-01-31 Cswitch Corporation Method and apparatus for programming phase change devices
US7545665B2 (en) * 2006-09-06 2009-06-09 Glacier Microelectronics, Inc. High yielding, voltage, temperature, and process insensitive lateral poly fuse memory
WO2008032394A1 (en) * 2006-09-15 2008-03-20 Renesas Technology Corp. Semiconductor device
US7619917B2 (en) * 2006-11-28 2009-11-17 Qimonda North America Corp. Memory cell with trigger element
US7903447B2 (en) 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US7701759B2 (en) 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
TWI330846B (en) * 2007-03-08 2010-09-21 Ind Tech Res Inst A writing method and system for a phase change memory
US7940552B2 (en) * 2007-04-30 2011-05-10 Samsung Electronics Co., Ltd. Multiple level cell phase-change memory device having pre-reading operation resistance drift recovery, memory systems employing such devices and methods of reading memory devices
KR101469831B1 (ko) * 2007-04-30 2014-12-09 삼성전자주식회사 향상된 읽기 성능을 갖는 멀티-레벨 상변환 메모리 장치 및그것의 읽기 방법
KR100914267B1 (ko) 2007-06-20 2009-08-27 삼성전자주식회사 가변저항 메모리 장치 및 그것의 형성방법
US7571901B2 (en) * 2007-06-21 2009-08-11 Qimonda North America Corp. Circuit for programming a memory element
KR20090006468A (ko) * 2007-07-11 2009-01-15 삼성전자주식회사 상변화 물질, 상기 상변화 물질을 포함하는 스퍼터 타겟,상기 스퍼터 타겟을 이용한 상변화층의 형성방법 및 상기방법으로 형성된 상변화층을 포함하는 상변화 메모리소자의 제조방법
KR101308549B1 (ko) * 2007-07-12 2013-09-13 삼성전자주식회사 멀티-레벨 상변환 메모리 장치 및 그것의 쓰기 방법
KR100887061B1 (ko) * 2007-07-24 2009-03-04 주식회사 하이닉스반도체 상 변화 메모리 장치
KR101408876B1 (ko) * 2007-11-13 2014-06-18 삼성전자주식회사 상 변화 메모리 장치의 기입 드라이버 회로
CN101452743B (zh) * 2007-12-05 2011-10-26 财团法人工业技术研究院 相变存储器的写入系统与方法
US7593255B2 (en) 2007-12-07 2009-09-22 Qimonda North America Corp. Integrated circuit for programming a memory element
US8077505B2 (en) * 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
TWI450274B (zh) * 2008-06-02 2014-08-21 Higgs Opl Capital Llc 記憶體與記憶體寫入方法
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7876606B2 (en) * 2008-07-02 2011-01-25 Qimonda Ag Integrated circuit for programming a memory cell
JP2010067332A (ja) * 2008-09-12 2010-03-25 Elpida Memory Inc 相補型相変化メモリセル及びメモリ回路
US7719913B2 (en) * 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8036014B2 (en) 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8301977B2 (en) * 2008-12-30 2012-10-30 Stmicroelectronics S.R.L. Accelerating phase change memory writes
US8093661B2 (en) * 2009-01-07 2012-01-10 Macronix International Co., Ltd. Integrated circuit device with single crystal silicon on silicide and manufacturing method
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8166368B2 (en) * 2009-02-24 2012-04-24 International Business Machines Corporation Writing a special symbol to a memory to indicate the absence of a data signal
US8023345B2 (en) * 2009-02-24 2011-09-20 International Business Machines Corporation Iteratively writing contents to memory locations using a statistical model
KR101086858B1 (ko) * 2009-04-15 2011-11-25 주식회사 하이닉스반도체 라이트 전압을 생성하는 비휘발성 반도체 메모리 회로
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US7894254B2 (en) * 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8386739B2 (en) * 2009-09-28 2013-02-26 International Business Machines Corporation Writing to memory using shared address buses
US8230276B2 (en) * 2009-09-28 2012-07-24 International Business Machines Corporation Writing to memory using adaptive write techniques
KR101652333B1 (ko) * 2010-02-10 2016-08-30 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 프로그램 방법
US8463985B2 (en) 2010-03-31 2013-06-11 International Business Machines Corporation Constrained coding to reduce floating gate coupling in non-volatile memories
US8634235B2 (en) 2010-06-25 2014-01-21 Macronix International Co., Ltd. Phase change memory coding
CN101894587A (zh) * 2010-07-23 2010-11-24 上海宏力半导体制造有限公司 相变存储器的自限写入脉冲发生电路
CN101901632B (zh) * 2010-08-11 2015-12-02 上海华虹宏力半导体制造有限公司 监控位线电压的监控电路及监控方法
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
US8374019B2 (en) 2011-01-05 2013-02-12 Macronix International Co., Ltd. Phase change memory with fast write characteristics
CN102592667A (zh) * 2011-01-13 2012-07-18 中国科学院微电子研究所 编程电阻存储单元的方法和装置
US8891293B2 (en) 2011-06-23 2014-11-18 Macronix International Co., Ltd. High-endurance phase change memory devices and methods for operating the same
CN102355013B (zh) * 2011-08-22 2013-09-18 北京兆易创新科技股份有限公司 一种灵敏放大器的预充电控制电路
CN102299537B (zh) * 2011-08-22 2013-12-11 北京兆易创新科技股份有限公司 一种灵敏放大器的预充电控制电路及方法
KR101893145B1 (ko) 2011-12-06 2018-10-05 삼성전자주식회사 메모리 시스템들 및 그것들의 블록 복사 방법들
DE102012111829B4 (de) 2011-12-06 2024-10-10 Samsung Electronics Co., Ltd. Speichersysteme und Blockkopierverfahren davon
US9001550B2 (en) 2012-04-27 2015-04-07 Macronix International Co., Ltd. Blocking current leakage in a memory array
KR20140028481A (ko) * 2012-08-29 2014-03-10 에스케이하이닉스 주식회사 쓰기 전류를 측정할 수 있는 반도체 메모리 장치 및 쓰기 전류 측정 방법
US9281061B2 (en) 2012-09-19 2016-03-08 Micron Technology, Inc. Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit
US8964442B2 (en) 2013-01-14 2015-02-24 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US9779810B2 (en) * 2015-09-11 2017-10-03 Macronix International Co., Ltd. Adjustable writing circuit
US10204681B2 (en) * 2017-05-09 2019-02-12 National Tsing Hua University Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cell
US10832770B2 (en) 2019-03-13 2020-11-10 Sandisk Technologies Llc Single pulse memory operation
KR102681484B1 (ko) 2019-10-22 2024-07-08 삼성전자주식회사 메모리 장치 및 이의 동작 방법
IT202000012070A1 (it) 2020-05-22 2021-11-22 St Microelectronics Srl Dispositivo di memoria non volatile con un circuito di pilotaggio di programmazione includente un limitatore di tensione
EP4503439A1 (en) * 2023-08-02 2025-02-05 Infineon Technologies AG Controller for phase change switch device, system and methods
EP4513486A1 (en) 2023-08-24 2025-02-26 STMicroelectronics International N.V. Non-volatile memory device, corresponding method and system
TWI892865B (zh) * 2024-10-16 2025-08-01 聯華電子股份有限公司 寫入電路

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330944A (ja) * 1995-03-24 1996-12-13 Kawasaki Steel Corp 半導体デバイス
JP2002541613A (ja) * 1999-04-12 2002-12-03 エナージー コンバーション デバイセス インコーポレイテッド ユニバーサルメモリ素子を使用するシステムを有するユニバーサルメモリ素子と、同メモリ素子を読み取り、書き込み、またプログラムするための装置と方法
JP2003109393A (ja) * 2001-07-20 2003-04-11 Hewlett Packard Co <Hp> Ｗｏｒｍ記憶装置のパルス列書き込み
US20030081451A1 (en) * 2001-10-30 2003-05-01 Lowrey Tyler A. Technique and apparatus for performing write operations to a phase change material memory device
US20030081445A1 (en) * 2001-10-31 2003-05-01 Van Brocklin Andrew L. Feedback write method for programmable memory
JP2004234707A (ja) * 2002-12-04 2004-08-19 Sharp Corp 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP2008059736A (ja) * 2006-06-19 2008-03-13 Qimonda North America Corp 温度制御されるセットパルスを用いてプログラムされるメモリセル

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4968507A (en) * 1984-06-20 1990-11-06 Merck & Co., Inc. Controlled porosity osmotic pump
MY105136A (en) * 1988-04-27 1994-08-30 Daiichi Seiyaku Co Optically active pyridonecarboxylic acid derivatives.
EP0995447A1 (en) * 1993-09-09 2000-04-26 Takeda Chemical Industries, Ltd. Formulation comprising antibacterial substance and antiulcer substance
US6057323A (en) * 1996-03-08 2000-05-02 Adolor Corporation Kappa agonist compounds pharmaceutical formulations and method of prevention and treatment of pruritus therewith
US5712815A (en) * 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5847003A (en) * 1996-06-04 1998-12-08 Avon Products, Inc. Oxa acids and related compounds for treating skin conditions
KR100223868B1 (ko) * 1996-07-12 1999-10-15 구본준 비휘발성 메모리를 프로그램하는 방법
WO1998058928A1 (fr) * 1997-06-23 1998-12-30 Yoshitomi Pharmaceutical Industries, Ltd. Agent prophylactique ou therapeutique contre des maladies attribuables a une infection par des helicobacters
US6075719A (en) * 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
US6222771B1 (en) * 2000-01-31 2001-04-24 Eon Silicon Devices, Inc. Unified program method and circuitry in flash EEPROM
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6487113B1 (en) * 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
EP1324345A1 (en) * 2001-12-27 2003-07-02 STMicroelectronics S.r.l. Single supply voltage, nonvolatile memory device with cascoded column decoding
JP2004079033A (ja) * 2002-08-12 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置
US6813177B2 (en) * 2002-12-13 2004-11-02 Ovoynx, Inc. Method and system to store information
KR100480644B1 (ko) * 2003-02-28 2005-03-31 삼성전자주식회사 셀 구동 전류가 증가된 상 변화 메모리
KR100546322B1 (ko) * 2003-03-27 2006-01-26 삼성전자주식회사 비휘발성 메모리와 휘발성 메모리로 선택적으로 동작할 수있는 상 변화 메모리 장치 및 상 변화 메모리 장치의 동작방법
US7085154B2 (en) * 2003-06-03 2006-08-01 Samsung Electronics Co., Ltd. Device and method for pulse width control in a phase change memory device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330944A (ja) * 1995-03-24 1996-12-13 Kawasaki Steel Corp 半導体デバイス
JP2002541613A (ja) * 1999-04-12 2002-12-03 エナージー コンバーション デバイセス インコーポレイテッド ユニバーサルメモリ素子を使用するシステムを有するユニバーサルメモリ素子と、同メモリ素子を読み取り、書き込み、またプログラムするための装置と方法
JP2003109393A (ja) * 2001-07-20 2003-04-11 Hewlett Packard Co <Hp> Ｗｏｒｍ記憶装置のパルス列書き込み
US20030081451A1 (en) * 2001-10-30 2003-05-01 Lowrey Tyler A. Technique and apparatus for performing write operations to a phase change material memory device
US20030081445A1 (en) * 2001-10-31 2003-05-01 Van Brocklin Andrew L. Feedback write method for programmable memory
JP2004234707A (ja) * 2002-12-04 2004-08-19 Sharp Corp 半導体記憶装置及びメモリセルの書き込み並びに消去方法
JP2008059736A (ja) * 2006-06-19 2008-03-13 Qimonda North America Corp 温度制御されるセットパルスを用いてプログラムされるメモリセル

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10855087B1 (en) 2004-01-15 2020-12-01 Comarco Wireless Systems Llc Power supply systems
US10855086B2 (en) 2004-01-15 2020-12-01 Comarco Wireless Systems Llc Power supply equipment utilizing interchangeable tips to provide power and a data signal to electronic devices
US10951042B2 (en) 2004-01-15 2021-03-16 Comarco Wireless Systems Llc Power supply systems
US11586233B2 (en) 2004-01-15 2023-02-21 Comarco Wireless Systems Llc Power supply systems
US7580277B2 (en) 2005-01-19 2009-08-25 Elpida Memory, Inc. Memory device including a programmable resistance element
US7751227B2 (en) 2005-01-19 2010-07-06 Elpida Memory, Inc. Memory device including a programmable resistance element
JP2006277822A (ja) * 2005-03-29 2006-10-12 Nec Corp 磁気ランダムアクセスメモリ及びその動作方法
US8742514B2 (en) 2005-10-28 2014-06-03 Samsung Electronics Co., Ltd. Storage node, phase change memory device and methods of operating and fabricating the same
JP2007123908A (ja) * 2005-10-28 2007-05-17 Samsung Electronics Co Ltd 相変化メモリ素子、その動作及び製造方法
JP2007207412A (ja) * 2006-01-03 2007-08-16 Qimonda Ag 抵抗メモリのための書き込み回路
JP2009157982A (ja) * 2007-12-26 2009-07-16 Toshiba Corp 不揮発性半導体記憶装置
JP2011526401A (ja) * 2008-06-27 2011-10-06 サンディスク スリーディー，エルエルシー 不揮発性記憶における同時書込みと検証
JP2011526403A (ja) * 2008-06-27 2011-10-06 サンディスク スリーディー，エルエルシー 不揮発性記憶用の短いリセットパルス
JP2012504839A (ja) * 2008-10-06 2012-02-23 サンディスク スリーディー，エルエルシー 可逆的抵抗スイッチングメモリ材料用のセット及びリセット検出回路
JP2010218603A (ja) * 2009-03-13 2010-09-30 Sharp Corp 不揮発性可変抵抗素子のフォーミング処理の制御回路、並びにフォーミング処理の制御方法
US8139404B2 (en) 2009-04-03 2012-03-20 Elpida Memory, Inc. Semiconductor memory device
JP2011253595A (ja) * 2010-06-03 2011-12-15 Toshiba Corp 不揮発性半導体記憶装置
US8456913B2 (en) 2010-09-03 2013-06-04 SK Hynix Inc. Semiconductor memory apparatus and method for controlling programming current pulse
KR101284527B1 (ko) 2010-09-23 2013-07-16 마이크론 테크놀로지, 인크. 역치 에지 검출을 이용한 상 변화 메모리 상태 판정
US9747981B2 (en) 2011-08-18 2017-08-29 Micron Technology, Inc. Apparatuses, devices and methods for sensing a snapback event in a circuit
US10083745B2 (en) 2011-08-18 2018-09-25 Micron Technology, Inc Apparatuses, devices and methods for sensing a snapback event in a circuit
US10636483B2 (en) 2011-08-18 2020-04-28 Micron Technology, Inc. Apparatuses, devices and methods for sensing a snapback event in a circuit
US9390768B2 (en) 2011-08-18 2016-07-12 Micron Technology, Inc. Apparatuses, devices and methods for sensing a snapback event in a circuit
JP2014529838A (ja) * 2011-08-18 2014-11-13 マイクロン テクノロジー，インク． 回路においてスナップバック事象を検知するための装置、デバイスおよび方法
US11100991B2 (en) 2011-08-18 2021-08-24 Micron Technology, Inc. Apparatuses, devices and methods for sensing a snapback event in a circuit
US9312003B2 (en) 2013-09-18 2016-04-12 Kabushiki Kaisha Toshiba Semiconductor memory device and method of performing setting operation in semiconductor memory device

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ITMI20041046A1 (it) 2004-08-25
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