JP2004191920A - マイクロリソグラフィ用等の投影対物レンズ及び投影対物レンズの調整方法 - Google Patents

マイクロリソグラフィ用等の投影対物レンズ及び投影対物レンズの調整方法 Download PDF

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Publication number
JP2004191920A
JP2004191920A JP2003178908A JP2003178908A JP2004191920A JP 2004191920 A JP2004191920 A JP 2004191920A JP 2003178908 A JP2003178908 A JP 2003178908A JP 2003178908 A JP2003178908 A JP 2003178908A JP 2004191920 A JP2004191920 A JP 2004191920A
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Japan
Prior art keywords
optical element
projection objective
group
plane
last
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2003178908A
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English (en)
Japanese (ja)
Inventor
Alexander Epple
エップレ アレキサンダー
Paul Graeupner
グロイプナー パウル
Winfried Kaiser
カイザー ヴィンフリート
Reiner Garreis
ガライス ライナー
Wilhelm Ulrich
ウルリッヒ ヴィルヘルム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of JP2004191920A publication Critical patent/JP2004191920A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003178908A 2002-12-09 2003-06-24 マイクロリソグラフィ用等の投影対物レンズ及び投影対物レンズの調整方法 Pending JP2004191920A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10258718A DE10258718A1 (de) 2002-12-09 2002-12-09 Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives

Publications (1)

Publication Number Publication Date
JP2004191920A true JP2004191920A (ja) 2004-07-08

Family

ID=32336366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003178908A Pending JP2004191920A (ja) 2002-12-09 2003-06-24 マイクロリソグラフィ用等の投影対物レンズ及び投影対物レンズの調整方法

Country Status (6)

Country Link
US (2) US7209292B2 (US20040109237A1-20040610-M00003.png)
EP (1) EP1431826A3 (US20040109237A1-20040610-M00003.png)
JP (1) JP2004191920A (US20040109237A1-20040610-M00003.png)
KR (1) KR20040050824A (US20040109237A1-20040610-M00003.png)
DE (1) DE10258718A1 (US20040109237A1-20040610-M00003.png)
TW (1) TWI269059B (US20040109237A1-20040610-M00003.png)

Cited By (10)

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WO2005001544A1 (ja) * 2003-06-26 2005-01-06 Nikon Corporation 光学ユニット、結像光学系、結像光学系の収差調整方法、投影光学系、投影光学系の製造方法、露光装置、および露光方法
WO2005076322A1 (ja) * 2004-02-09 2005-08-18 Yoshihiko Okamoto 露光装置及びそれを用いた半導体装置の製造方法
WO2006009064A1 (ja) * 2004-07-16 2006-01-26 Nikon Corporation 光学部材の支持方法及び支持構造、光学装置、露光装置、並びにデバイス製造方法
JP2006251805A (ja) * 2005-03-08 2006-09-21 Schott Ag マイクロリトグラフィー用光学素子の作製方法、同方法により得られるレンズ系、及び同レンズ系の使用方法
JP2006332669A (ja) * 2005-05-25 2006-12-07 Carl Zeiss Smt Ag 異なる浸漬液とともに使用するのに適した投影レンズとその変換方法及び製造方法
JP2007306004A (ja) * 2006-05-12 2007-11-22 Qimonda Ag パターンをｅｕｖマスクから基板に投影するための装置およびその方法
JP2008523426A (ja) * 2004-12-09 2008-07-03 カール・ツアイス・エスエムテイ・アーゲー マイクロリソグラフィ投影露光装置用の透過光学素子および対物レンズ
US7710653B2 (en) 2005-01-28 2010-05-04 Nikon Corporation Projection optical system, exposure system, and exposure method
JP4957970B2 (ja) * 2005-01-28 2012-06-20 株式会社ニコン 投影光学系、露光装置、および露光方法
JP2013191871A (ja) * 2013-05-13 2013-09-26 Nikon Corp 反射屈折型の投影光学系、露光装置、および露光方法

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DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
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JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
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US7209292B2 (en) 2007-04-24
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