JP2004175656A5 - - Google Patents

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Publication number
JP2004175656A5
JP2004175656A5 JP2003324312A JP2003324312A JP2004175656A5 JP 2004175656 A5 JP2004175656 A5 JP 2004175656A5 JP 2003324312 A JP2003324312 A JP 2003324312A JP 2003324312 A JP2003324312 A JP 2003324312A JP 2004175656 A5 JP2004175656 A5 JP 2004175656A5
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JP
Japan
Prior art keywords
maximum temperature
kgf
firing
tables
minute
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Application number
JP2003324312A
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English (en)
Japanese (ja)
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JP4386695B2 (ja
JP2004175656A (ja
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Application filed filed Critical
Priority claimed from JP2003324312A external-priority patent/JP4386695B2/ja
Priority to JP2003324312A priority Critical patent/JP4386695B2/ja
Priority to TW092126953A priority patent/TWI258460B/zh
Priority to US10/704,997 priority patent/US7148166B2/en
Priority to KR1020030080017A priority patent/KR100569643B1/ko
Priority to EP03257159A priority patent/EP1420004B1/en
Priority to DE60335594T priority patent/DE60335594D1/de
Publication of JP2004175656A publication Critical patent/JP2004175656A/ja
Publication of JP2004175656A5 publication Critical patent/JP2004175656A5/ja
Publication of JP4386695B2 publication Critical patent/JP4386695B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2003324312A 2002-11-14 2003-09-17 窒化アルミニウム焼結体の製造方法 Expired - Lifetime JP4386695B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003324312A JP4386695B2 (ja) 2002-11-14 2003-09-17 窒化アルミニウム焼結体の製造方法
TW092126953A TWI258460B (en) 2002-11-14 2003-09-30 Aluminum nitride ceramics, a member used for the manufacture of semiconductors, and method for producing an aluminum nitride sintered body
US10/704,997 US7148166B2 (en) 2002-11-14 2003-11-10 Aluminum nitride ceramics and a member used for the production of semiconductors
EP03257159A EP1420004B1 (en) 2002-11-14 2003-11-13 An aluminum nitride ceramic and a member used for the production of semiconductors
KR1020030080017A KR100569643B1 (ko) 2002-11-14 2003-11-13 질화알루미늄질 세라믹스, 반도체 제조용 부재 및질화알루미늄 소결체의 제조 방법
DE60335594T DE60335594D1 (de) 2002-11-14 2003-11-13 Eine Aluminiumnitridkeramik und ein Bauteil für die Herstellung von Halbleitern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002330707 2002-11-14
JP2003324312A JP4386695B2 (ja) 2002-11-14 2003-09-17 窒化アルミニウム焼結体の製造方法

Publications (3)

Publication Number Publication Date
JP2004175656A JP2004175656A (ja) 2004-06-24
JP2004175656A5 true JP2004175656A5 (enExample) 2006-04-06
JP4386695B2 JP4386695B2 (ja) 2009-12-16

Family

ID=32179156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003324312A Expired - Lifetime JP4386695B2 (ja) 2002-11-14 2003-09-17 窒化アルミニウム焼結体の製造方法

Country Status (6)

Country Link
US (1) US7148166B2 (enExample)
EP (1) EP1420004B1 (enExample)
JP (1) JP4386695B2 (enExample)
KR (1) KR100569643B1 (enExample)
DE (1) DE60335594D1 (enExample)
TW (1) TWI258460B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4424659B2 (ja) * 2003-02-28 2010-03-03 日本碍子株式会社 窒化アルミニウム質材料および半導体製造装置用部材
JP5062959B2 (ja) * 2005-03-25 2012-10-31 日本碍子株式会社 セラミックス部材及びその製造方法
JP2006273587A (ja) * 2005-03-25 2006-10-12 Ngk Insulators Ltd 窒化アルミニウム質セラミックス、半導体製造部材及び窒化アルミニウム質セラミックスの製造方法
WO2007004833A2 (en) 2005-06-30 2007-01-11 Lg Electronics Inc. Method and apparatus for encoding and decoding an audio signal
JP4740002B2 (ja) * 2006-03-20 2011-08-03 日本碍子株式会社 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
JP4590368B2 (ja) * 2006-03-24 2010-12-01 日本碍子株式会社 静電チャックの製造方法
KR101693071B1 (ko) * 2010-06-08 2017-01-04 덴카 주식회사 회로 기판용 질화 알루미늄 기판 및 그 제조 방법
US8945729B1 (en) * 2010-09-22 2015-02-03 Skyworks Solutions, Inc. Thermal barrier coating material with RF absorption capabilities at elevated temperatures
CN103332935B (zh) * 2013-06-20 2014-12-10 绥中伊菲人工晶体科技有限公司 一种氮化铝复合陶瓷
KR101690753B1 (ko) * 2015-07-28 2017-01-10 강릉원주대학교산학협력단 반도체 초고온 박막공정을 위한 저열전도도 특성을 갖는 질화알루미늄 히터용 샤프트 및 이의 제조방법
KR102339550B1 (ko) * 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
KR101797232B1 (ko) 2017-07-10 2017-11-13 주식회사 케이에스엠컴포넌트 정전척
DE102018133377A1 (de) * 2018-12-21 2020-06-25 RF360 Europe GmbH Piezoelektrisches Material und piezoelektrische Vorrichtung
JP2020158375A (ja) * 2019-03-28 2020-10-01 京セラ株式会社 窒化アルミニウム基板、電子装置及び電子モジュール
JP7441070B2 (ja) * 2020-02-18 2024-02-29 京セラ株式会社 窒化アルミニウム基板、電子装置及び電子モジュール

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6478902A (en) * 1987-06-26 1989-03-24 Bridgestone Corp Low noise tire wheel
JP3457495B2 (ja) * 1996-03-29 2003-10-20 日本碍子株式会社 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP3370532B2 (ja) 1996-11-26 2003-01-27 京セラ株式会社 静電チャック
US5705450A (en) * 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP3663306B2 (ja) * 1998-11-02 2005-06-22 京セラ株式会社 窒化アルミニウム質焼結体およびそれを用いた静電チャック
JP2000226261A (ja) * 1999-02-08 2000-08-15 Fuji Electric Co Ltd 窒化アルミニウム焼結体およびその製造方法
JP2001064079A (ja) * 1999-08-25 2001-03-13 Sumitomo Electric Ind Ltd 窒化アルミニウム焼結体及びその製造方法
US6607836B2 (en) * 2000-10-23 2003-08-19 Ngk Insulators, Ltd. Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
JP4243943B2 (ja) 2002-04-22 2009-03-25 日本碍子株式会社 窒化アルミニウム材料および半導体製造用部材

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