JP2004163922A - 液晶表示装置の製造方法 - Google Patents
液晶表示装置の製造方法 Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/104—Materials and properties semiconductor poly-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
Abstract
【解決手段】層間絶縁膜38の有機絶縁膜33上に室温で非晶質のITO膜を堆積し、非晶質のままITO膜をパターニングして画素電極21を形成し、配向膜形成後の熱処理によりITO膜を多結晶化する。
【選択図】 図3
Description
図1は、本発明の第1の実施の形態に係る液晶表示装置の製造方法により製造される液晶表示装置におけるTFT基板の構成を概念的に示す平面図である。本実施形態はIPS型液晶表示装置の場合の例である。
次に、本発明の第2の実施の形態について説明する。第2の実施の形態においては、有機絶縁膜33上にプラズマ処理が行われる。
20、30 透明絶縁性基板
11 走査線
12 信号線
13 共通配線
14 TFT
15 走査線端子
16 信号線端子
17a、17b 共通配線結束線
18a、18b 共通配線端子
21、71 画素電極
22、72 共通電極
23 ゲート電極
24 ソース電極
25 ドレイン電極
26、27、44、96、97 コンタクトホール
31 ゲート絶縁膜
32 パッシベーション膜
33 有機絶縁膜
34 半導体層
35 蓄積容量電極
38 層間絶縁膜
41、81 端子部金属膜
42、82 接続電極
43、83 端子部コンタクトホール
50 対向基板
51 配向膜
52 ブラックマトリクス
53R,53G,53B カラーフィルタ
54 オーバーコート膜
55 液晶層
56 透明導電層
57 偏光板
64 耐圧向上用半導体層
66、67 開口
Claims (17)
- 基板上にスイッチング素子を形成する第一の工程と、前記スイッチング素子を層間絶縁膜で覆う第二の工程と、前記層間絶縁膜を介して前記スイッチング素子に接続される透明電極を前記層間絶縁膜上に形成する第三の工程と、を有する液晶表示装置の製造方法において、
前記第三の工程は、
前記層間絶縁膜上に非晶質の透明導電膜を堆積する工程と、
前記非晶質の透明導電膜をパターニングして透明電極を形成する工程と、
配向膜形成後の熱処理により前記透明電極を多結晶化する工程と、
を含むことを特徴とする液晶表示装置の製造方法。 - 前記第二の工程は、
前記スイッチング素子を無機絶縁膜で覆う工程と、
前記無機絶縁膜上に有機絶縁膜を形成する工程と、
を備えることを特徴とする請求項1に記載の液晶表示装置の製造方法。 - 前記無機絶縁膜上に有機絶縁膜を形成する工程において、前記有機絶縁膜は、少なくとも前記スイッチング素子のドレイン電極を含む信号線の全部または一部を覆ってパターン形成されることを特徴とする請求項2に記載の液晶表示装置の製造方法。
- 前記第一の工程は、
前記基板上にゲート電極を含む走査線及び共通電位を供給する共通配線を形成する工程と、
前記走査線及び前記共通配線を覆って前記基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に前記スイッチング素子の活性層となる半導体層を形成する工程と、
前記走査線と交差し、前記スイッチング素子のドレイン電極を含む信号線と、前記スイッチング素子のソース電極とを形成する工程と、を有し、
前記第三の工程は、
前記非晶質の透明導電膜をパターニングして前記層間絶縁膜上に前記スイッチング素子と接続する画素電極と、前記共通配線と接続する共通電極とを形成する工程からなるものであることを特徴とする請求項1乃至3のいずれか一項に記載の液晶表示装置の製造方法。 - 前記透明導電膜をインジウム錫酸化膜(ITO)より形成することを特徴とする請求項1乃至4のいずれか一項に記載の液晶表示装置の製造方法。
- 前記層間絶縁膜上に前記透明導電膜を室温で成膜することを特徴とする請求項1乃至5のいずれか一項に記載の液晶表示装置の製造方法。
- 前記層間絶縁膜上に前記透明導電膜を少なくとも水または水素を含む雰囲気下で成膜することを特徴とする請求項1乃至6のいずれか一項に記載の液晶表示装置の製造方法。
- 前記熱処理を180℃乃至240℃の温度で行うことを特徴とする請求項1乃至7のいずれか一項に記載の液晶表示装置の製造方法。
- 基板上にスイッチング素子を形成する第一の工程と、少なくとも有機絶縁膜からなる上層を有する層間絶縁膜で前記スイッチング素子を覆う第二の工程と、前記層間絶縁膜を介して前記スイッチング素子に接続される透明電極を前記層間絶縁膜上に形成する第三の工程と、を有する液晶表示装置の製造方法において、
前記層間絶縁膜は無機絶縁膜上に前記有機絶縁膜を有する構成であり、
前記第三の工程は、
前記有機絶縁膜をパターン形成する工程と、
前記有機絶縁膜を含む基板にプラズマ処理を施す工程と、
前記無機絶縁膜にコンタクトホールを開口する工程と、
前記層間絶縁膜上に透明導電膜を堆積する工程と、
前記透明導電膜をパターニングして透明電極を形成する工程と、
を含むことを特徴とする液晶表示装置の製造方法。 - 前記有機絶縁膜をパターン形成する工程において、前記有機絶縁膜は、少なくとも前記スイッチング素子のドレイン電極を含む信号線の全部または一部を覆ってパターン形成されることを請求項9に記載の液晶表示装置の製造方法。
- 前記第一の工程は、
前記基板上に、ゲート電極を含む走査線及び共通電位を供給する共通配線を形成する工程と、
前記走査線及び前記共通配線を覆って前記基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に前記スイッチング素子の活性層となる半導体層を形成する工程と、
前記走査線と交差し、前記スイッチング素子のドレイン電極を含む信号線と、前記スイッチング素子のソース電極とを形成する工程と、を有し、
前記透明導電膜をパターニングして透明電極を形成する工程は、
前記透明導電膜をパターニングして前記層間絶縁膜上に前記スイッチング素子と接続する画素電極と、前記共通配線と接続する共通電極とを形成する工程からなるものであることを特徴とする請求項9又は10に記載の液晶表示装置の製造方法。 - 前記プラズマ処理がヘリウム(He)プラズマにより行われることを特徴とする請求項9乃至11のいずれか一項に記載の液晶表示装置の製造方法。
- 前記無機絶縁膜にコンタクトホールを開口する工程は、
前記層間絶縁膜上にフォトレジストをパターン形成する工程と、
前記フォトレジストをポストベークする工程と、
前記フォトレジストをマスクとして前記無機絶縁膜にウェットエッチングまたはウェットエッチング及びドライエッチングの双方を施す工程と、
を備えることを特徴とする請求項9乃至12のいずれか一項に記載の液晶表示装置の製造方法。 - 基板上にスイッチング素子を形成する第一の工程と、前記スイッチング素子を少なくとも上層に有機絶縁膜を有する層間絶縁膜で覆う第二の工程と、前記層間絶縁膜を介して前記スイッチング素子に接続される透明電極を前記層間絶縁膜上に形成する第三の工程と、を有する液晶表示装置の製造方法において、
前記層間絶縁膜は無機絶縁膜上に前記有機絶縁膜を有する構成であり、
前記第三の工程は、
前記有機絶縁膜をパターン形成する工程と、
前記無機絶縁膜にコンタクトホールを開口する工程と、
前記層間絶縁膜上に透明導電膜を堆積する工程と、
前記透明導電膜をパターニングして透明電極を形成する工程と、を含み、
前記無機絶縁膜にコンタクトホールを開口する工程は、
前記層間絶縁膜上にフォトレジストをパターン形成する工程と、
前記フォトレジストをポストベークする工程を経ることなく、前記フォトレジストをマスクとして前記無機絶縁膜にドライエッチングを施す工程と、を備えることを特徴とする液晶表示装置の製造方法。 - 前記有機絶縁膜をパターン形成する工程において、前記有機絶縁膜は、少なくとも前記スイッチング素子のドレイン電極を含む信号線の全部または一部を覆ってパターン形成されることを請求項14に記載の液晶表示装置の製造方法。
- 前記第一の工程は、
前記基板上にゲート電極を含む走査線及び共通電位を供給する共通配線を形成する工程と、
前記走査線及び前記共通配線を覆って前記基板上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上に前記スイッチング素子の活性層となる半導体層を形成する工程と、
前記走査線と交差し、前記スイッチング素子のドレイン電極を含む信号線と、前記スイッチング素子のソース電極とを形成する工程と、を有し、
前記透明導電膜をパターニングして透明電極を形成する工程は、前記透明導電膜をパターニングして前記層間絶縁膜上に前記スイッチング素子と接続する画素電極と、前記共通配線と接続する共通電極とを形成する工程からなるものであることを特徴とする請求項14又は15に記載の液晶表示装置の製造方法。 - 前記透明導電膜をインジウム錫酸化膜(ITO)またはインジウム亜鉛酸化膜(IZO)により形成することを特徴とする請求項9乃至16のいずれか一項に記載の液晶表示装置の製造方法。
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