JP2004127499A5 - - Google Patents

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Publication number
JP2004127499A5
JP2004127499A5 JP2003336597A JP2003336597A JP2004127499A5 JP 2004127499 A5 JP2004127499 A5 JP 2004127499A5 JP 2003336597 A JP2003336597 A JP 2003336597A JP 2003336597 A JP2003336597 A JP 2003336597A JP 2004127499 A5 JP2004127499 A5 JP 2004127499A5
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JP
Japan
Prior art keywords
initial state
memory cell
mosfets
parameter
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003336597A
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English (en)
Japanese (ja)
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JP2004127499A (ja
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Publication date
Priority claimed from US10/262,631 external-priority patent/US6906962B2/en
Application filed filed Critical
Publication of JP2004127499A publication Critical patent/JP2004127499A/ja
Publication of JP2004127499A5 publication Critical patent/JP2004127499A5/ja
Pending legal-status Critical Current

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JP2003336597A 2002-09-30 2003-09-29 スタティック・ランダム・アクセス・メモリの初期状態を決定する方法 Pending JP2004127499A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/262,631 US6906962B2 (en) 2002-09-30 2002-09-30 Method for defining the initial state of static random access memory

Publications (2)

Publication Number Publication Date
JP2004127499A JP2004127499A (ja) 2004-04-22
JP2004127499A5 true JP2004127499A5 (https=) 2006-10-19

Family

ID=28454433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003336597A Pending JP2004127499A (ja) 2002-09-30 2003-09-29 スタティック・ランダム・アクセス・メモリの初期状態を決定する方法

Country Status (5)

Country Link
US (1) US6906962B2 (https=)
JP (1) JP2004127499A (https=)
KR (1) KR101026335B1 (https=)
GB (1) GB2394338B (https=)
TW (1) TWI291179B (https=)

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US8259505B2 (en) 2010-05-28 2012-09-04 Nscore Inc. Nonvolatile memory device with reduced current consumption
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