JP2005531934A5 - - Google Patents

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Publication number
JP2005531934A5
JP2005531934A5 JP2004519678A JP2004519678A JP2005531934A5 JP 2005531934 A5 JP2005531934 A5 JP 2005531934A5 JP 2004519678 A JP2004519678 A JP 2004519678A JP 2004519678 A JP2004519678 A JP 2004519678A JP 2005531934 A5 JP2005531934 A5 JP 2005531934A5
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JP
Japan
Prior art keywords
region
gate
substrate
logic element
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004519678A
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English (en)
Japanese (ja)
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JP2005531934A (ja
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Publication date
Priority claimed from US10/211,433 external-priority patent/US7064034B2/en
Application filed filed Critical
Publication of JP2005531934A publication Critical patent/JP2005531934A/ja
Publication of JP2005531934A5 publication Critical patent/JP2005531934A5/ja
Pending legal-status Critical Current

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JP2004519678A 2002-07-02 2003-06-25 複数のゲートレイヤを用いて論理要素を製造する技術 Pending JP2005531934A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US42111502P 2002-07-02 2002-07-02
US10/211,433 US7064034B2 (en) 2002-07-02 2002-08-02 Technique for fabricating logic elements using multiple gate layers
PCT/US2003/020453 WO2004006338A1 (en) 2002-07-02 2003-06-25 Technique for fabricating logic elements using multiple gate layers

Publications (2)

Publication Number Publication Date
JP2005531934A JP2005531934A (ja) 2005-10-20
JP2005531934A5 true JP2005531934A5 (https=) 2007-01-11

Family

ID=30117870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004519678A Pending JP2005531934A (ja) 2002-07-02 2003-06-25 複数のゲートレイヤを用いて論理要素を製造する技術

Country Status (5)

Country Link
US (3) US7064034B2 (https=)
EP (1) EP1520302A1 (https=)
JP (1) JP2005531934A (https=)
AU (1) AU2003281425A1 (https=)
WO (1) WO2004006338A1 (https=)

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WO2007017700A1 (en) 2005-08-09 2007-02-15 University Of Sunderland Hydrophobic silica particles and methods of making same
US7968932B2 (en) * 2005-12-26 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7738282B2 (en) * 2007-02-15 2010-06-15 Taiwan Semiconductor Manufacturing Company, Ltd. Cell structure of dual port SRAM
CN102024821B (zh) * 2009-09-18 2012-08-22 中芯国际集成电路制造(上海)有限公司 非易失性存储装置、非易失性存储器件及其制造方法
JP5531848B2 (ja) * 2010-08-06 2014-06-25 富士通セミコンダクター株式会社 半導体装置、半導体集積回路装置、ＳＲＡＭ、Ｄｔ−ＭＯＳトランジスタの製造方法
CN102569386B (zh) * 2010-12-17 2015-02-04 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos器件及其制备方法
CN102569385B (zh) * 2010-12-17 2015-04-08 上海华虹宏力半导体制造有限公司 具有屏蔽栅的vdmos结构及其制备方法
JP5715872B2 (ja) * 2011-04-13 2015-05-13 ラピスセミコンダクタ株式会社 半導体集積回路、半導体集積回路の製造方法及び信号処理装置
US9735382B2 (en) * 2012-11-08 2017-08-15 Palo Alto Research Center Incorporated Circuit layout for thin film transistors in series or parallel
US8778742B1 (en) * 2013-04-26 2014-07-15 Freescale Semiconductor, Inc. Methods and systems for gate dimension control in multi-gate structures for semiconductor devices
JP2015056472A (ja) * 2013-09-11 2015-03-23 株式会社東芝 半導体装置
KR102374052B1 (ko) 2016-02-26 2022-03-14 삼성전자주식회사 반도체 소자 및 그 제조 방법

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