CN102569385B - 具有屏蔽栅的vdmos结构及其制备方法 - Google Patents
具有屏蔽栅的vdmos结构及其制备方法 Download PDFInfo
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CN102569385B true CN102569385B (zh) | 2015-04-08 |
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CN104716186B (zh) * | 2014-01-16 | 2017-10-03 | 黎茂林 | 平面型场效应晶体管及制造方法、电荷保持 |
CN104393029A (zh) * | 2014-11-03 | 2015-03-04 | 吉林华微电子股份有限公司 | 低输入电容功率半导体场效应晶体管及其自对准制作方法 |
CN104576398B (zh) * | 2014-12-12 | 2018-04-10 | 北京时代民芯科技有限公司 | 一种具有抗辐照性能的vdmos器件制造方法 |
CN114373676A (zh) * | 2022-01-17 | 2022-04-19 | 捷捷微电(上海)科技有限公司 | 一种平面型vdmos器件双栅极结构的制作方法 |
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CN101393918A (zh) * | 2007-09-18 | 2009-03-25 | 上海华虹Nec电子有限公司 | 双比特的sonos eeprom存储结构单元及其制备方法 |
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SG165138A1 (en) * | 2000-07-12 | 2010-10-28 | Inst Of Microelectronics | A semiconductor device |
US7064034B2 (en) * | 2002-07-02 | 2006-06-20 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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