CN102569079B - 具有自对准金属硅化工艺的双栅ldmos的制备方法 - Google Patents
具有自对准金属硅化工艺的双栅ldmos的制备方法 Download PDFInfo
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- CN102569079B CN102569079B CN201010595285.XA CN201010595285A CN102569079B CN 102569079 B CN102569079 B CN 102569079B CN 201010595285 A CN201010595285 A CN 201010595285A CN 102569079 B CN102569079 B CN 102569079B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 45
- 239000002184 metal Substances 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000005516 engineering process Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 title abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 3
- 150000004706 metal oxides Chemical class 0.000 title abstract description 3
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 24
- 229920005591 polysilicon Polymers 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 210000004483 pasc Anatomy 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052914 metal silicate Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 3
- 238000001039 wet etching Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 abstract description 4
- 210000000746 body region Anatomy 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- -1 this Chemical compound 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010595285.XA CN102569079B (zh) | 2010-12-17 | 2010-12-17 | 具有自对准金属硅化工艺的双栅ldmos的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010595285.XA CN102569079B (zh) | 2010-12-17 | 2010-12-17 | 具有自对准金属硅化工艺的双栅ldmos的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102569079A CN102569079A (zh) | 2012-07-11 |
CN102569079B true CN102569079B (zh) | 2014-12-10 |
Family
ID=46414187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201010595285.XA Active CN102569079B (zh) | 2010-12-17 | 2010-12-17 | 具有自对准金属硅化工艺的双栅ldmos的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102569079B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3217434A1 (en) * | 2016-03-11 | 2017-09-13 | MediaTek Inc. | Semiconductor device capable of high-voltage operation |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10418480B2 (en) | 2016-03-11 | 2019-09-17 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
US10396166B2 (en) | 2016-03-11 | 2019-08-27 | Mediatek Inc. | Semiconductor device capable of high-voltage operation |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825531B1 (en) * | 2003-07-11 | 2004-11-30 | Micrel, Incorporated | Lateral DMOS transistor with a self-aligned drain region |
CN1691295A (zh) * | 2004-04-23 | 2005-11-02 | 中国科学院微电子研究所 | 用于射频横向扩散场效应晶体管的自对准硅化物方法 |
CN101901786B (zh) * | 2009-05-26 | 2012-04-18 | 上海华虹Nec电子有限公司 | 包含dmos晶体管的集成电路的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4380863A (en) * | 1979-12-10 | 1983-04-26 | Texas Instruments Incorporated | Method of making double level polysilicon series transistor devices |
NL8204855A (nl) * | 1982-12-16 | 1984-07-16 | Philips Nv | Veldeffekttransistor met geisoleerde stuurelektrode en werkwijze ter vervaardiging daarvan. |
US6642115B1 (en) * | 2000-05-15 | 2003-11-04 | International Business Machines Corporation | Double-gate FET with planarized surfaces and self-aligned silicides |
CN100555661C (zh) * | 2003-08-27 | 2009-10-28 | Nxp股份有限公司 | 包括ldmos晶体管的电子器件 |
US7329922B2 (en) * | 2004-11-30 | 2008-02-12 | Agere Systems Inc. | Dual-gate metal-oxide semiconductor device |
US20070105320A1 (en) * | 2005-08-31 | 2007-05-10 | Xiao ("Charles") Yang | Method and Structure of Multi-Surface Transistor Device |
-
2010
- 2010-12-17 CN CN201010595285.XA patent/CN102569079B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825531B1 (en) * | 2003-07-11 | 2004-11-30 | Micrel, Incorporated | Lateral DMOS transistor with a self-aligned drain region |
CN1691295A (zh) * | 2004-04-23 | 2005-11-02 | 中国科学院微电子研究所 | 用于射频横向扩散场效应晶体管的自对准硅化物方法 |
CN101901786B (zh) * | 2009-05-26 | 2012-04-18 | 上海华虹Nec电子有限公司 | 包含dmos晶体管的集成电路的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3217434A1 (en) * | 2016-03-11 | 2017-09-13 | MediaTek Inc. | Semiconductor device capable of high-voltage operation |
Also Published As
Publication number | Publication date |
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CN102569079A (zh) | 2012-07-11 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140103 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140103 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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