JP2009514214A5 - - Google Patents

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Publication number
JP2009514214A5
JP2009514214A5 JP2008537740A JP2008537740A JP2009514214A5 JP 2009514214 A5 JP2009514214 A5 JP 2009514214A5 JP 2008537740 A JP2008537740 A JP 2008537740A JP 2008537740 A JP2008537740 A JP 2008537740A JP 2009514214 A5 JP2009514214 A5 JP 2009514214A5
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JP
Japan
Prior art keywords
transistor
pull
active region
bit cell
vertical
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Application number
JP2008537740A
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English (en)
Japanese (ja)
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JP5283507B2 (ja
JP2009514214A (ja
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Priority claimed from US11/257,972 external-priority patent/US7452768B2/en
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Publication of JP2009514214A publication Critical patent/JP2009514214A/ja
Publication of JP2009514214A5 publication Critical patent/JP2009514214A5/ja
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JP2008537740A 2005-10-25 2006-10-10 逆ｔ字チャネル型トランジスタを含む複数の型のデバイス、及びその製造方法 Active JP5283507B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/257,972 US7452768B2 (en) 2005-10-25 2005-10-25 Multiple device types including an inverted-T channel transistor and method therefor
US11/257,972 2005-10-25
PCT/US2006/039651 WO2007050288A2 (en) 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor

Publications (3)

Publication Number Publication Date
JP2009514214A JP2009514214A (ja) 2009-04-02
JP2009514214A5 true JP2009514214A5 (https=) 2009-11-26
JP5283507B2 JP5283507B2 (ja) 2013-09-04

Family

ID=37968335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008537740A Active JP5283507B2 (ja) 2005-10-25 2006-10-10 逆ｔ字チャネル型トランジスタを含む複数の型のデバイス、及びその製造方法

Country Status (6)

Country Link
US (2) US7452768B2 (https=)
EP (1) EP1943671A4 (https=)
JP (1) JP5283507B2 (https=)
KR (1) KR101313473B1 (https=)
TW (1) TWI420603B (https=)
WO (1) WO2007050288A2 (https=)

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US8158484B2 (en) * 2007-10-03 2012-04-17 Freescale Semiconductor, Inc. Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
US7820512B2 (en) * 2007-12-28 2010-10-26 Intel Corporation Spacer patterned augmentation of tri-gate transistor gate length
US9245805B2 (en) 2009-09-24 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with metal gates and stressors
US20110291188A1 (en) * 2010-05-25 2011-12-01 International Business Machines Corporation Strained finfet
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US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
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US9373550B2 (en) 2014-04-23 2016-06-21 International Business Machines Corporation Selectively degrading current resistance of field effect transistor devices
US9391065B1 (en) 2015-06-29 2016-07-12 Globalfoundries Inc. Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US9893171B2 (en) 2016-06-03 2018-02-13 International Business Machines Corporation Fin field effect transistor fabrication and devices having inverted T-shaped gate
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US10741566B2 (en) 2018-06-26 2020-08-11 Micron Technology, Inc. Integrated arrangements of pull-up transistors and pull-down transistors, and integrated static memory

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