JP5283507B2 - 逆ｔ字チャネル型トランジスタを含む複数の型のデバイス、及びその製造方法 - Google Patents

逆ｔ字チャネル型トランジスタを含む複数の型のデバイス、及びその製造方法 Download PDF

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JP5283507B2
JP5283507B2 JP2008537740A JP2008537740A JP5283507B2 JP 5283507 B2 JP5283507 B2 JP 5283507B2 JP 2008537740 A JP2008537740 A JP 2008537740A JP 2008537740 A JP2008537740 A JP 2008537740A JP 5283507 B2 JP5283507 B2 JP 5283507B2
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transistor
active region
pull
fin
vertical
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JP2009514214A5 (https=
JP2009514214A (ja
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ダヴリュ ミン，ビョン
ディー バーネット，ジェームズ
マシュー，リオ
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008537740A 2005-10-25 2006-10-10 逆ｔ字チャネル型トランジスタを含む複数の型のデバイス、及びその製造方法 Active JP5283507B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/257,972 US7452768B2 (en) 2005-10-25 2005-10-25 Multiple device types including an inverted-T channel transistor and method therefor
US11/257,972 2005-10-25
PCT/US2006/039651 WO2007050288A2 (en) 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor

Publications (3)

Publication Number Publication Date
JP2009514214A JP2009514214A (ja) 2009-04-02
JP2009514214A5 JP2009514214A5 (https=) 2009-11-26
JP5283507B2 true JP5283507B2 (ja) 2013-09-04

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JP2008537740A Active JP5283507B2 (ja) 2005-10-25 2006-10-10 逆ｔ字チャネル型トランジスタを含む複数の型のデバイス、及びその製造方法

Country Status (6)

Country Link
US (2) US7452768B2 (https=)
EP (1) EP1943671A4 (https=)
JP (1) JP5283507B2 (https=)
KR (1) KR101313473B1 (https=)
TW (1) TWI420603B (https=)
WO (1) WO2007050288A2 (https=)

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US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
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US9373550B2 (en) 2014-04-23 2016-06-21 International Business Machines Corporation Selectively degrading current resistance of field effect transistor devices
US9391065B1 (en) 2015-06-29 2016-07-12 Globalfoundries Inc. Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US9893171B2 (en) 2016-06-03 2018-02-13 International Business Machines Corporation Fin field effect transistor fabrication and devices having inverted T-shaped gate
US10396075B2 (en) * 2017-05-01 2019-08-27 International Business Machines Corporation Very narrow aspect ratio trapping trench structure with smooth trench sidewalls
US10741566B2 (en) 2018-06-26 2020-08-11 Micron Technology, Inc. Integrated arrangements of pull-up transistors and pull-down transistors, and integrated static memory

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Also Published As

Publication number Publication date
US7452768B2 (en) 2008-11-18
WO2007050288A2 (en) 2007-05-03
JP2009514214A (ja) 2009-04-02
US8643066B2 (en) 2014-02-04
EP1943671A4 (en) 2009-12-30
US20090039418A1 (en) 2009-02-12
KR20080061375A (ko) 2008-07-02
TW200733245A (en) 2007-09-01
US20070093054A1 (en) 2007-04-26
WO2007050288A3 (en) 2008-01-03
EP1943671A2 (en) 2008-07-16
KR101313473B1 (ko) 2013-10-01
TWI420603B (zh) 2013-12-21

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