KR101313473B1 - 역 ｔ 채널 트랜지스터를 포함하는 다수의 디바이스 타입및 그 방법 - Google Patents

역 ｔ 채널 트랜지스터를 포함하는 다수의 디바이스 타입및 그 방법 Download PDF

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KR101313473B1
KR101313473B1 KR1020087009819A KR20087009819A KR101313473B1 KR 101313473 B1 KR101313473 B1 KR 101313473B1 KR 1020087009819 A KR1020087009819 A KR 1020087009819A KR 20087009819 A KR20087009819 A KR 20087009819A KR 101313473 B1 KR101313473 B1 KR 101313473B1
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transistor
active region
pull
fin
transistors
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KR20080061375A (ko
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병 더블유. 민
제임스 디. 버넷
레오 매튜
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0158—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]

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  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020087009819A 2005-10-25 2006-10-10 역 ｔ 채널 트랜지스터를 포함하는 다수의 디바이스 타입및 그 방법 Expired - Fee Related KR101313473B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/257,972 US7452768B2 (en) 2005-10-25 2005-10-25 Multiple device types including an inverted-T channel transistor and method therefor
US11/257,972 2005-10-25
PCT/US2006/039651 WO2007050288A2 (en) 2005-10-25 2006-10-10 Multiple device types including an inverted-t channel transistor and method therefor

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KR20080061375A KR20080061375A (ko) 2008-07-02
KR101313473B1 true KR101313473B1 (ko) 2013-10-01

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US (2) US7452768B2 (https=)
EP (1) EP1943671A4 (https=)
JP (1) JP5283507B2 (https=)
KR (1) KR101313473B1 (https=)
TW (1) TWI420603B (https=)
WO (1) WO2007050288A2 (https=)

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US8158484B2 (en) * 2007-10-03 2012-04-17 Freescale Semiconductor, Inc. Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device
US7820512B2 (en) * 2007-12-28 2010-10-26 Intel Corporation Spacer patterned augmentation of tri-gate transistor gate length
US9245805B2 (en) 2009-09-24 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs with metal gates and stressors
US20110291188A1 (en) * 2010-05-25 2011-12-01 International Business Machines Corporation Strained finfet
US8987831B2 (en) 2012-01-12 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells and arrays
CN103367432B (zh) * 2012-03-31 2016-02-03 中芯国际集成电路制造(上海)有限公司 多栅极场效应晶体管及其制造方法
US9583398B2 (en) 2012-06-29 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit having FinFETS with different fin profiles
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US9373550B2 (en) 2014-04-23 2016-06-21 International Business Machines Corporation Selectively degrading current resistance of field effect transistor devices
US9391065B1 (en) 2015-06-29 2016-07-12 Globalfoundries Inc. Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US9893171B2 (en) 2016-06-03 2018-02-13 International Business Machines Corporation Fin field effect transistor fabrication and devices having inverted T-shaped gate
US10396075B2 (en) * 2017-05-01 2019-08-27 International Business Machines Corporation Very narrow aspect ratio trapping trench structure with smooth trench sidewalls
US10741566B2 (en) 2018-06-26 2020-08-11 Micron Technology, Inc. Integrated arrangements of pull-up transistors and pull-down transistors, and integrated static memory

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US20040099885A1 (en) * 2002-11-26 2004-05-27 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS SRAM cell configured using multiple-gate transistors
US20050023633A1 (en) * 2003-08-01 2005-02-03 Yee-Chia Yeo Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors

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US20050023633A1 (en) * 2003-08-01 2005-02-03 Yee-Chia Yeo Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors

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US7452768B2 (en) 2008-11-18
JP5283507B2 (ja) 2013-09-04
WO2007050288A2 (en) 2007-05-03
JP2009514214A (ja) 2009-04-02
US8643066B2 (en) 2014-02-04
EP1943671A4 (en) 2009-12-30
US20090039418A1 (en) 2009-02-12
KR20080061375A (ko) 2008-07-02
TW200733245A (en) 2007-09-01
US20070093054A1 (en) 2007-04-26
WO2007050288A3 (en) 2008-01-03
EP1943671A2 (en) 2008-07-16
TWI420603B (zh) 2013-12-21

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