TWI291179B - Method for defining the initial state of static random access memory - Google Patents

Method for defining the initial state of static random access memory Download PDF

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Publication number
TWI291179B
TWI291179B TW092125647A TW92125647A TWI291179B TW I291179 B TWI291179 B TW I291179B TW 092125647 A TW092125647 A TW 092125647A TW 92125647 A TW92125647 A TW 92125647A TW I291179 B TWI291179 B TW I291179B
Authority
TW
Taiwan
Prior art keywords
initial state
memory
mosfets
memory unit
controlling
Prior art date
Application number
TW092125647A
Other languages
English (en)
Chinese (zh)
Other versions
TW200414224A (en
Inventor
Paul Arthur Layman
Samir Chaudhry
James Gary Norman
J Ross Thomson
Original Assignee
Agere Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Inc filed Critical Agere Systems Inc
Publication of TW200414224A publication Critical patent/TW200414224A/zh
Application granted granted Critical
Publication of TWI291179B publication Critical patent/TWI291179B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
TW092125647A 2002-09-30 2003-09-17 Method for defining the initial state of static random access memory TWI291179B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/262,631 US6906962B2 (en) 2002-09-30 2002-09-30 Method for defining the initial state of static random access memory

Publications (2)

Publication Number Publication Date
TW200414224A TW200414224A (en) 2004-08-01
TWI291179B true TWI291179B (en) 2007-12-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW092125647A TWI291179B (en) 2002-09-30 2003-09-17 Method for defining the initial state of static random access memory

Country Status (5)

Country Link
US (1) US6906962B2 (https=)
JP (1) JP2004127499A (https=)
KR (1) KR101026335B1 (https=)
GB (1) GB2394338B (https=)
TW (1) TWI291179B (https=)

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US8451657B2 (en) 2011-02-14 2013-05-28 Nscore, Inc. Nonvolatile semiconductor memory device using MIS transistor
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Also Published As

Publication number Publication date
US6906962B2 (en) 2005-06-14
GB0319127D0 (en) 2003-09-17
GB2394338A (en) 2004-04-21
GB2394338B (en) 2007-04-25
TW200414224A (en) 2004-08-01
KR20040029260A (ko) 2004-04-06
US20040062083A1 (en) 2004-04-01
KR101026335B1 (ko) 2011-04-04
JP2004127499A (ja) 2004-04-22

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