JP2004111776A - 不純物導入方法、装置および素子 - Google Patents

不純物導入方法、装置および素子 Download PDF

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Publication number
JP2004111776A
JP2004111776A JP2002274554A JP2002274554A JP2004111776A JP 2004111776 A JP2004111776 A JP 2004111776A JP 2002274554 A JP2002274554 A JP 2002274554A JP 2002274554 A JP2002274554 A JP 2002274554A JP 2004111776 A JP2004111776 A JP 2004111776A
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JP
Japan
Prior art keywords
solid
introducing
solid surface
impurity
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002274554A
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English (en)
Japanese (ja)
Other versions
JP2004111776A5 (enExample
Inventor
Yuichiro Sasaki
雄一朗 佐々木
Bunji Mizuno
文二 水野
Ichiro Nakayama
一郎 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2002274554A priority Critical patent/JP2004111776A/ja
Priority to AU2003266541A priority patent/AU2003266541A1/en
Priority to TW092125948A priority patent/TW200415666A/zh
Priority to PCT/JP2003/012001 priority patent/WO2004027847A1/ja
Priority to US10/526,999 priority patent/US7547619B2/en
Publication of JP2004111776A publication Critical patent/JP2004111776A/ja
Publication of JP2004111776A5 publication Critical patent/JP2004111776A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase

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  • Physical Or Chemical Processes And Apparatus (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2002274554A 2002-09-20 2002-09-20 不純物導入方法、装置および素子 Pending JP2004111776A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002274554A JP2004111776A (ja) 2002-09-20 2002-09-20 不純物導入方法、装置および素子
AU2003266541A AU2003266541A1 (en) 2002-09-20 2003-09-19 Method of introducing impurity, device and element
TW092125948A TW200415666A (en) 2002-09-20 2003-09-19 Impurity introduction method, apparatus and element
PCT/JP2003/012001 WO2004027847A1 (ja) 2002-09-20 2003-09-19 不純物導入方法、装置および素子
US10/526,999 US7547619B2 (en) 2002-09-20 2003-09-19 Method of introducing impurity, device and element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002274554A JP2004111776A (ja) 2002-09-20 2002-09-20 不純物導入方法、装置および素子

Publications (2)

Publication Number Publication Date
JP2004111776A true JP2004111776A (ja) 2004-04-08
JP2004111776A5 JP2004111776A5 (enExample) 2005-09-22

Family

ID=32025003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002274554A Pending JP2004111776A (ja) 2002-09-20 2002-09-20 不純物導入方法、装置および素子

Country Status (5)

Country Link
US (1) US7547619B2 (enExample)
JP (1) JP2004111776A (enExample)
AU (1) AU2003266541A1 (enExample)
TW (1) TW200415666A (enExample)
WO (1) WO2004027847A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101008509B1 (ko) 2006-01-17 2011-01-17 브로드콤 코포레이션 파워 오버 이더넷 컨트롤러 집적 회로 아키텍처

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3263058B2 (ja) 1989-12-01 2002-03-04 セイコーインスツルメンツ株式会社 半導体内壁に対する不純物の注入方法
JP3130906B2 (ja) 1989-12-01 2001-01-31 セイコーインスツルメンツ株式会社 半導体内壁に対する不純物の注入方法
JP3079575B2 (ja) 1990-12-20 2000-08-21 株式会社日立製作所 半導体装置の製造方法
JPH0794427A (ja) * 1993-09-21 1995-04-07 Nippon Telegr & Teleph Corp <Ntt> ドーピング方法
JPH0831779A (ja) * 1994-07-13 1996-02-02 Japan Energy Corp 化合物半導体基板の研磨方法
JPH08172214A (ja) 1994-08-24 1996-07-02 Seiko Instr Inc 光電変換半導体装置の製造方法
JPH097962A (ja) * 1995-06-15 1997-01-10 Hitachi Ltd ボロン不純物層形成方法およびそれを用いて製造された半導体装置
JP4086334B2 (ja) 1995-08-10 2008-05-14 松下電器産業株式会社 不純物の導入方法
US5851906A (en) * 1995-08-10 1998-12-22 Matsushita Electric Industrial Co., Ltd. Impurity doping method
DE69631258T2 (de) * 1995-10-13 2004-11-18 Lam Research Corp., Fremont Verfahren zum Entfernen von Verunreinigungen durch Bürsten
JPH09283456A (ja) 1996-04-18 1997-10-31 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JP3479928B2 (ja) 1996-09-06 2003-12-15 富士通株式会社 半導体結晶の製造方法
JPH11204450A (ja) 1998-01-07 1999-07-30 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
AU2003266541A1 (en) 2004-04-08
US7547619B2 (en) 2009-06-16
WO2004027847A1 (ja) 2004-04-01
US20060088989A1 (en) 2006-04-27
TW200415666A (en) 2004-08-16

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