WO2005093800A1 - 不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置 - Google Patents
不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置 Download PDFInfo
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- WO2005093800A1 WO2005093800A1 PCT/JP2005/004790 JP2005004790W WO2005093800A1 WO 2005093800 A1 WO2005093800 A1 WO 2005093800A1 JP 2005004790 W JP2005004790 W JP 2005004790W WO 2005093800 A1 WO2005093800 A1 WO 2005093800A1
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- impurity
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- 239000012535 impurity Substances 0.000 title claims abstract description 180
- 238000000034 method Methods 0.000 title claims abstract description 72
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- 239000000758 substrate Substances 0.000 claims description 81
- 239000007789 gas Substances 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 description 18
- 229910052796 boron Inorganic materials 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
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- 238000009826 distribution Methods 0.000 description 5
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
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- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
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- 239000011261 inert gas Substances 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
Definitions
- Impurity introduction method impurity introduction device, and semiconductor device formed using this method
- the present invention relates to an impurity introduction method, an impurity introduction device, and a semiconductor device formed using the same, and more particularly, to controlling an impurity introduction profile in plasma doping.
- a pn junction is formed by introducing a p-type impurity such as boron into an n-type silicon substrate by ion implantation and then electrically activating it using a halogen lamp or the like.
- a pn junction is formed by introducing a p-type impurity such as boron into an n-type silicon substrate by ion implantation and then electrically activating it using a halogen lamp or the like.
- Various devices are formed! RU
- the depth of the introduction region was limited to about lOnm from the substrate surface.
- Non-Patent Document 1 Plasma Doping Technology: Bunji Mizuno (Vol. 70, No. 12, p. 1458-1 462 (2001)
- Non-patent Document 2 Properties of sub-0.1 micron pMOSFETs doped by low bias plasma doping! ⁇ : Reliable and enhanced performances of sub-0.1 ⁇ m pMOSFETs doped by low biased Plasma Doping, Damien Lenoble et al., VLSI Symposium, IEEE Z Japan Society of Applied Physics, p.110, 2000.
- the impurity concentration aperture file in order to stably form a shallow and low-resistance impurity region, the impurity concentration aperture file must make the change on the substrate surface gentle, that is, a so-called box-type (box-type) impurity concentration profile is required. It is.
- box-type box-type
- impurities are introduced into a very shallow region, even if the concentration is usually high near the surface, there are many things that change abruptly as the depth increases, and it is ideal but extremely difficult to control the box type. It is said that.
- the present invention has been made in view of the above circumstances, and has as its object to realize extremely shallow and stable impurity introduction with high accuracy.
- Another object of the present invention is to form an impurity region having a so-called box-type impurity profile.
- the impurity introduction method of the present invention is characterized in that it includes a step of introducing a desired impurity to the surface of a solid substrate, and a step of irradiating a plasma to the surface of the solid substrate after the introduction. I do.
- the surface of the solid substrate is irradiated with low-energy plasma to remove impurities (boron: B) on the extreme surface in the vertical direction. Knock-on with energy to impart kinetic energy in the vertical direction to the impurity, thereby driving the impurity in the depth direction.
- the impurities introduced to a certain depth (lOnm) cannot be further driven by this low-energy plasma. Only the impurities on the extreme surface are introduced to a depth of about lOnm. Thereby, the impurity concentration at the shallow V position can be increased.
- this phenomenon is achieved by supplying kinetic energy of plasma perpendicularly to the surface of the solid substrate, whereby a high-concentration impurity region can be formed at a shallow position without spreading in the lateral direction.
- a box-type impurity concentration profile can be obtained.
- the impurity concentration profile in the depth direction before the annealing of impurities such as boron introduced by ion implantation or plasma doping affects the electrical characteristics of the shallow active layer after the annealing. That is, if the depth of the active layer is the same, the sheet resistance of the activation layer becomes the lowest because the depth concentration profile of the impurity after annealing shows the impurity concentration on the vertical axis and the depth concentration on the horizontal axis. This is a case where the density distribution is distributed in a box shape in a graph obtained by taking a measure.
- the depth concentration profile of the impurity before annealing is closer to a box shape, the depth concentration profile of the impurity after annealing is more box-shaped.
- the depth concentration profile of the impurity after annealing before annealing is different from the concentration profile before annealing. It is almost the same.
- the flash lamp-etching method was developed as an activation method in which diffusion of impurities hardly occurs in order to form an activation layer having a low sheet resistance. By applying this method, the sheet resistance can be reduced. Therefore, reduction of the device speed can be achieved. That is, by forming the impurity concentration profile before annealing into a box shape, Sheet resistance of the passivation layer can be reduced.
- the method of the present invention includes a step of irradiating the plasma with a step of irradiating an inert plasma in the semiconductor substrate.
- the concentration profile of the impurity introduced into the semiconductor substrate can be made box-shaped without reacting with elements such as silicon constituting the semiconductor.
- the step of irradiating the plasma includes a step of adjusting plasma irradiation conditions so that the impurity has a desired impurity profile in the semiconductor substrate.
- the step of irradiating the plasma includes a step of irradiating a plasma containing at least one rare gas element.
- the method of the present invention includes a method in which the step of irradiating the plasma includes a step of irradiating He plasma.
- the step of irradiating the plasma includes a step of irradiating a plasma containing hydrogen.
- this method is desirable because the amount of hydrogen remaining in the substrate after annealing is small, and the effect on the characteristics of the substrate, especially the semiconductor characteristics, is small. ,.
- the step of introducing an impurity includes a step of plasma doping. Including.
- the step of introducing the impurity includes a step of ion implantation.
- the controllability and the in-plane uniformity are good. It is also desirable to use low energy ion implantation. This is because a shallow implantation is possible, which is suitable for forming a shallow junction, which is the object of the present invention.
- the method of the present invention includes a method in which the step of introducing impurities includes a gas doping step.
- Gas doping is a method that uses impurities in an electrically neutral gas state, instead of ions, to introduce impurities using adsorption and permeation of gas molecules into a semiconductor substrate. If the particles are introduced into the solid substrate with extremely low energy, a shallower impurity introduction layer can be efficiently formed. Therefore, a shallower junction can be formed.
- the impurity introduction device of the present invention includes an impurity introduction means for introducing a desired impurity to the surface of the solid substrate, and irradiating the surface of the solid substrate with plasma to cause the impurity to be introduced into the solid substrate. It is characterized by comprising adjusting means for adjusting the concentration distribution and annealing means for activating the introduced impurities.
- the apparatus of the present invention provides a chamber, an impurity introducing means for introducing impurities to a surface of a solid substrate provided in the chamber, and a plasma generating means for generating plasma on the surface of the solid substrate. And annealing means for annealing the solid substrate in the chamber.
- the introduction of impurities, the adjustment of the concentration distribution thereof, and the electrical activation can be efficiently performed from the viewpoint of workability.
- the semiconductor device of the present invention is formed such that the impurity profile at the position of 4 nm in depth has one-tenth or more of the impurity concentration on the surface.
- the impurity profile has a surface It is formed so that the impurity concentration becomes 1/100 or more.
- the impurity introduction device of the present invention is an impurity introduction device that excites a substance containing an impurity by plasma and introduces the impurity into the solid substrate from the excited substance.
- the apparatus includes a chamber to be disposed, a unit for supplying a certain amount of the substance into the chamber, a unit for evacuating the chamber, and a plasma generating unit for converting the fixed amount of the substance into plasma.
- the means for supplying a certain amount of the substance has a mechanism for measuring and storing the substance, and this mechanism controls the volume, pressure, and temperature of the storage container to maintain the substance at a constant amount. ing. Further, the storage container stores an amount of a substance corresponding to the amount of impurities introduced into the base.
- the substance is a gas, a fine particle or a fine droplet.
- the droplet refers to a solution in which these fine particles or gas are dissolved or turbid. In addition, it may be formed so as to cover the surface.
- the timing of generating the plasma may be determined based on a result of simulating the profile of the impurity concentration in the vicinity of the surface of the solid base and simulating the profile. Furthermore, instead of simulating the profile of the impurity concentration, at least one selected from the group consisting of the flow rate of gas, fine particles or fine droplets, the number of gas molecules, and the pressure is measured, and the standard deviation is reduced to less than 2%.
- the plasma may be generated when it arrives.
- the present invention enables the profile to be controlled with high accuracy in impurity introduction, and adjusts the substance on the surface of the solid substrate so that the material is equilibrated on the surface of the solid substrate and then plasma-excited. Point, so that the plasma produces the desired distribution on the solid substrate surface
- these methods include those that adjust the material on the surface of the solid substrate, or combinations thereof, and enable plasma doping with a desired profile by these methods.
- a box-shaped close-up file is obtained by performing plasma treatment using plasma that has activity such as He plasma after introducing impurities into the substrate surface. Can be formed.
- FIG. 1 is a schematic cross-sectional view of an impurity introducing device used in an embodiment of the present invention.
- FIG. 2 is a process cross-sectional view showing an impurity introducing method according to the first embodiment of the present invention.
- FIG. 3 is a diagram showing SIMS data showing impurity profiles of an impurity region obtained in the embodiment of the present invention and Comparative Example 1.
- FIG. 4 is a view showing SIMS data showing impurity profiles of an impurity region obtained in the embodiment of the present invention and Comparative Example 2.
- 1 High-frequency power supply 2 Matching box 3 Coinole 4, 5 Mass flow controller 6 Turbo molecular pump 7 Conductance valve 8 Dry pump 9 Circulator 10 DC power supply 11 Matching box 1 2 High-frequency power supply 13 Substrate to be processed 13 ⁇ ⁇ -type silicon substrate 13 ⁇ ⁇ Type impurity region ⁇ Mask 14 Lower electrode 15 Vacuum chamber 100 Equipment
- FIG. 1 is a cross-sectional view schematically showing an impurity introducing device of the present invention.
- the impurity introducing device 100 is configured so that plasma doping, plasma irradiation, and annealing can be sequentially performed in the device. That is, in this apparatus, a semiconductor substrate as a substrate to be processed 13 is placed on a susceptor that also serves as a lower electrode 14 provided in a vacuum chamber 15, and a plasma generation region is formed near the surface of the substrate, and a plasma generating region is formed. It realizes plasma doping and plasma irradiation.
- a coil 3 is attached from a high frequency power supply 1 via a matching box 2, and high frequency power is supplied between the coil 3 and the lower electrode 14.
- the lower electrode 14 is connected to the DC power supply 10 and to the high-frequency power supply 12 via the matching box 11.
- the degree of vacuum of the vacuum chamber 115 is adjusted by a turbo molecular pump 6 and a dry pump 8 connected via a conductance valve 7.
- the lower electrode 14 is rotatably formed by a circuit 9.
- this chamber 1 has a mass flow controller 4 for supplying inert gas such as He gas into the chamber 1 and a mass flow controller for impurity gas for introducing diborane gas at a position opposed thereto. Troller 5 is formed.
- the force constituting the main body of the impurity introduction device in this manner is of a single-wafer type only, and in order to enable rapid processing, the entire volume, especially the volume of the vacuum chamber 15 is required to be a minimum. It is important to configure so that
- the plasma generation region is desirably formed by using a helicon wave plasma source, an ECR (Electron Cyclotron Resonance) plasma source, or the like.
- a plasma source a substance containing an impurity or a gas for plasma irradiation, here BH and
- He gas is excited by plasma in each step.
- a constant amount is supplied to the vacuum chamber 115 via the mass flow controllers 4 and 5.
- This supply amount is determined by the volume, temperature, and degree of vacuum of the mass flow controllers 4 and 5 and the vacuum chamber 15 and is monitored by a thermometer and a pressure gauge, respectively. The pressure is stably controlled.
- the gas supply is performed through the mass flow controllers 4 and 5, and can be strictly regulated by pressure control.
- the gas is B H
- the impurity introducing apparatus of the present invention excites a substance containing an impurity by plasma excitation to dope the substrate with the impurity.
- the RIE generates a plasma by continuously supplying a reaction gas to the reaction chamber. Dry etching like Reactive Ion Etching) or CV Unlike D (Chemical Vapor Deposition), the impurity introducing apparatus of the present invention can convert a certain amount of gas corresponding to the impurity introduction amount (dose amount) to the substrate into plasma with high accuracy. With this configuration, it is possible to introduce an impurity having an extremely shallow depth, and it is possible to control the introduction depth of the impurity with high accuracy.
- an impurity can be introduced into a semiconductor substrate (solid substrate) at a high precision and a high concentration by rapid processing so as to form a junction at an extremely shallow depth, so that single-wafer processing can be performed in a short time. Therefore, it is possible to form a semiconductor device with high accuracy and high reliability and with high productivity.
- a fine active region type liquid crystal display device is formed by forming fine impurity regions in a silicon thin film formed on a glass substrate on which liquid crystal is mounted and arranging TFTs. As well as improving mass production capacity, it is possible to reduce production costs.
- a direct current (DC) power supply 10 or a high frequency power supply 12 may be attached to a susceptor that also serves as a lower electrode 14 as a susceptor.
- this high-frequency power supply has a frequency of 100 kHz to 10 MHz.
- a DC potential in the range of several eV—Ike V can be formed between the plasma generated by these power supplies and the substrate 13 to be processed.
- FIG. 2 is a process cross-sectional view schematically showing an impurity introduction process according to the embodiment of the present invention.
- a mask ⁇ ⁇ ⁇ is formed on the surface of an n-type silicon substrate 13 ⁇ having a resistivity of 10 ⁇ cm and a diameter of 300 mm by photolithography.
- the mask ⁇ is formed.
- the substrate to be processed 13 made of the n-type silicon substrate 13n is placed on the lower electrode 14 as the susceptor and fixed by electrostatic attraction. Then, about 10- 5 Pa degree of vacuum in the vacuum chamber one 15 operates the turbo molecular pump 6 and Doraibon flop 8.
- Diborane BH filling the inside of the vacuum chamber 15 is plasma-excited by the power supply 12,
- Plasma doping is performed on the surface of the substrate to be processed.
- the gas pressure in the vacuum chamber was 2.5 Pa, the processing was continued for 7 seconds at a bias of 60 V.
- the substrate to be processed has a cooling mechanism on the lower electrode 14 in order to prevent the temperature of the substrate from rising. For this reason, the surface temperature of the substrate to be processed is not increased any more, with the upper limit being 200 ° C.
- a P-type impurity region 13P having a depth of about 7 nm is formed in a region exposed from the mask M.
- the impurity profile of the impurity region 13P formed by the method of the present invention is one-tenth or more of the impurity concentration at the surface at the depth of 4 nm and 100% at the depth of 7 nm. More than one-third.
- the impurity profile after the plasma doping is sharply reduced.
- the mechanism is not clear, it is considered that, according to the present invention, the B atom has moved deep into the region by the knock-on effect of the He ion.
- low energy plasma low energy He plasma
- the impurities (B) on the very surface are hit.
- B introduced to a certain depth (10 reactions) is He plasma Since it will not be hit, the thing on the very surface goes deep, and the thing that has moved to a certain depth does not move further, so the profile shown by curve a in Fig. 3 is obtained. It is thought that we can do it.
- the knocking or knock-on basically gives kinetic energy in the depth direction, so that the boron element selectively moves in the vertical direction, and the diffusion in the horizontal direction is slightly caused by collision with the Si element.
- the measuring device used here can only measure within a range of about four digits, and the area where many points are scattered is the unmeasurable area.
- Ge-PAI which is considered to be extremely effective in recent years, was subjected to pretreatment by implantation of germanium ions to form impurity regions. This is because the surface of the substrate to be processed is made amorphous by germanium ion implantation.
- FIG. A curve a shows the impurity concentration profile of the embodiment of the present invention described above.
- RTA rapid heat treatment
- flash lamp annealing FLA
- laser annealing or the like can be applied.
- a spike RTA at 1000 ° C it is desirable to set the heating rate to 200 ° CZsec and the cooling rate to 60 ° CZsec.
- FLA flash lamp annealing
- the temperature should be 1100-1300 ° C, lmsec.
- laser annealing the solid-state laser should be 1500 mJZcm 2 and lOOnsec.
- a shallow junction profile due to plasma doping can be approximated to a box shape by He plasma post-treatment.
- a substance containing impurities to be introduced is adsorbed on the surface of the substrate 13 or in the inside thereof in a form of adsorption or low energy ( (Several eV—IkeV) Introduced in the form of ion implantation.
- adsorption or low energy (Several eV—IkeV) Introduced in the form of ion implantation.
- active species such as neutral radicals mainly generated by the plasma excitation are chemically adsorbed.
- an ion implantation method or a gas doping method may be used instead of plasma doping as a method of introducing impurities.
- helicon wave plasma As the plasma used here, helicon wave plasma, ECR plasma, parallel plasma, or the like can be appropriately selected.
- the semiconductor substrate forming a semiconductor device has been described as a substrate to be processed.
- the substrate to be processed is a glass substrate forming a liquid crystal display device, and a matrix substrate is formed. The same is applicable in the case of doing so.
- the impurity is knocked on at a shallow position by a gas plasma such as He, so that an impurity profile close to a box shape can be obtained.
- DRAMs are formed on SOI (silicon on insulator) substrates with silicon thin films formed through films, and liquid crystal panels with liquid crystal drive circuits including thin film transistors (TFTs) are integrated. It can be applied to the formation of an impurity region that can withstand the temperature.
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Abstract
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US10/599,205 US7682954B2 (en) | 2004-03-25 | 2005-03-17 | Method of impurity introduction, impurity introduction apparatus and semiconductor device produced with use of the method |
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JP2004090455A JP2005277220A (ja) | 2004-03-25 | 2004-03-25 | 不純物導入方法、不純物導入装置およびこの方法を用いて形成された半導体装置 |
JP2004-090455 | 2004-03-25 |
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US (1) | US7682954B2 (ja) |
JP (1) | JP2005277220A (ja) |
CN (1) | CN1934681A (ja) |
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US7713757B2 (en) * | 2008-03-14 | 2010-05-11 | Applied Materials, Inc. | Method for measuring dopant concentration during plasma ion implantation |
CN102124543B (zh) * | 2008-08-15 | 2013-03-13 | 株式会社爱发科 | 等离子体掺杂方法及半导体装置的制造方法 |
WO2010051283A1 (en) * | 2008-10-31 | 2010-05-06 | Applied Materials, Inc. | Doping profile modification in p3i process |
US8361856B2 (en) | 2010-11-01 | 2013-01-29 | Micron Technology, Inc. | Memory cells, arrays of memory cells, and methods of forming memory cells |
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US8450175B2 (en) | 2011-02-22 | 2013-05-28 | Micron Technology, Inc. | Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith |
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- 2005-03-17 CN CNA200580009622XA patent/CN1934681A/zh active Pending
- 2005-03-17 US US10/599,205 patent/US7682954B2/en active Active
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US20080142931A1 (en) | 2008-06-19 |
CN1934681A (zh) | 2007-03-21 |
US7682954B2 (en) | 2010-03-23 |
JP2005277220A (ja) | 2005-10-06 |
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