AU2003266541A1 - Method of introducing impurity, device and element - Google Patents

Method of introducing impurity, device and element

Info

Publication number
AU2003266541A1
AU2003266541A1 AU2003266541A AU2003266541A AU2003266541A1 AU 2003266541 A1 AU2003266541 A1 AU 2003266541A1 AU 2003266541 A AU2003266541 A AU 2003266541A AU 2003266541 A AU2003266541 A AU 2003266541A AU 2003266541 A1 AU2003266541 A1 AU 2003266541A1
Authority
AU
Australia
Prior art keywords
introducing impurity
impurity
introducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003266541A
Other languages
English (en)
Inventor
Bunji Mizuno
Ichiro Nakayama
Yuichiro Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of AU2003266541A1 publication Critical patent/AU2003266541A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H10P32/1204—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase from a plasma phase
AU2003266541A 2002-09-20 2003-09-19 Method of introducing impurity, device and element Abandoned AU2003266541A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-274554 2002-09-20
JP2002274554A JP2004111776A (ja) 2002-09-20 2002-09-20 不純物導入方法、装置および素子
PCT/JP2003/012001 WO2004027847A1 (ja) 2002-09-20 2003-09-19 不純物導入方法、装置および素子

Publications (1)

Publication Number Publication Date
AU2003266541A1 true AU2003266541A1 (en) 2004-04-08

Family

ID=32025003

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003266541A Abandoned AU2003266541A1 (en) 2002-09-20 2003-09-19 Method of introducing impurity, device and element

Country Status (5)

Country Link
US (1) US7547619B2 (enExample)
JP (1) JP2004111776A (enExample)
AU (1) AU2003266541A1 (enExample)
TW (1) TW200415666A (enExample)
WO (1) WO2004027847A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101008509B1 (ko) 2006-01-17 2011-01-17 브로드콤 코포레이션 파워 오버 이더넷 컨트롤러 집적 회로 아키텍처

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3263058B2 (ja) 1989-12-01 2002-03-04 セイコーインスツルメンツ株式会社 半導体内壁に対する不純物の注入方法
JP3130906B2 (ja) 1989-12-01 2001-01-31 セイコーインスツルメンツ株式会社 半導体内壁に対する不純物の注入方法
JP3079575B2 (ja) 1990-12-20 2000-08-21 株式会社日立製作所 半導体装置の製造方法
JPH0794427A (ja) * 1993-09-21 1995-04-07 Nippon Telegr & Teleph Corp <Ntt> ドーピング方法
JPH0831779A (ja) * 1994-07-13 1996-02-02 Japan Energy Corp 化合物半導体基板の研磨方法
JPH08172214A (ja) 1994-08-24 1996-07-02 Seiko Instr Inc 光電変換半導体装置の製造方法
JPH097962A (ja) * 1995-06-15 1997-01-10 Hitachi Ltd ボロン不純物層形成方法およびそれを用いて製造された半導体装置
JP4086334B2 (ja) 1995-08-10 2008-05-14 松下電器産業株式会社 不純物の導入方法
US5851906A (en) * 1995-08-10 1998-12-22 Matsushita Electric Industrial Co., Ltd. Impurity doping method
DE69631258T2 (de) * 1995-10-13 2004-11-18 Lam Research Corp., Fremont Verfahren zum Entfernen von Verunreinigungen durch Bürsten
JPH09283456A (ja) 1996-04-18 1997-10-31 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法
JP3479928B2 (ja) 1996-09-06 2003-12-15 富士通株式会社 半導体結晶の製造方法
JPH11204450A (ja) 1998-01-07 1999-07-30 Hitachi Ltd 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP2004111776A (ja) 2004-04-08
US7547619B2 (en) 2009-06-16
WO2004027847A1 (ja) 2004-04-01
US20060088989A1 (en) 2006-04-27
TW200415666A (en) 2004-08-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase