JP2004071654A5 - - Google Patents

Download PDF

Info

Publication number
JP2004071654A5
JP2004071654A5 JP2002225237A JP2002225237A JP2004071654A5 JP 2004071654 A5 JP2004071654 A5 JP 2004071654A5 JP 2002225237 A JP2002225237 A JP 2002225237A JP 2002225237 A JP2002225237 A JP 2002225237A JP 2004071654 A5 JP2004071654 A5 JP 2004071654A5
Authority
JP
Japan
Prior art keywords
electrode
carbon nanotube
insulating film
carbon nanotubes
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002225237A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004071654A (ja
JP4338948B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002225237A priority Critical patent/JP4338948B2/ja
Priority claimed from JP2002225237A external-priority patent/JP4338948B2/ja
Priority to US10/628,239 priority patent/US7098151B2/en
Publication of JP2004071654A publication Critical patent/JP2004071654A/ja
Publication of JP2004071654A5 publication Critical patent/JP2004071654A5/ja
Priority to US11/413,178 priority patent/US7473651B2/en
Application granted granted Critical
Publication of JP4338948B2 publication Critical patent/JP4338948B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002225237A 2002-08-01 2002-08-01 カーボンナノチューブ半導体素子の作製方法 Expired - Fee Related JP4338948B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002225237A JP4338948B2 (ja) 2002-08-01 2002-08-01 カーボンナノチューブ半導体素子の作製方法
US10/628,239 US7098151B2 (en) 2002-08-01 2003-07-29 Method of manufacturing carbon nanotube semiconductor device
US11/413,178 US7473651B2 (en) 2002-08-01 2006-04-28 Method of manufacturing carbon nanotube semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002225237A JP4338948B2 (ja) 2002-08-01 2002-08-01 カーボンナノチューブ半導体素子の作製方法

Publications (3)

Publication Number Publication Date
JP2004071654A JP2004071654A (ja) 2004-03-04
JP2004071654A5 true JP2004071654A5 (enExample) 2005-10-27
JP4338948B2 JP4338948B2 (ja) 2009-10-07

Family

ID=31185035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002225237A Expired - Fee Related JP4338948B2 (ja) 2002-08-01 2002-08-01 カーボンナノチューブ半導体素子の作製方法

Country Status (2)

Country Link
US (2) US7098151B2 (enExample)
JP (1) JP4338948B2 (enExample)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US8154093B2 (en) * 2002-01-16 2012-04-10 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7948041B2 (en) 2005-05-19 2011-05-24 Nanomix, Inc. Sensor having a thin-film inhibition layer
CA2499965C (en) * 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7858185B2 (en) 2003-09-08 2010-12-28 Nantero, Inc. High purity nanotube fabrics and films
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
TWI222742B (en) * 2003-05-05 2004-10-21 Ind Tech Res Inst Fabrication and structure of carbon nanotube-gate transistor
EP1631812A4 (en) * 2003-05-14 2010-12-01 Nantero Inc SENSOR PLATFORM HAVING A HORIZONTAL NANOPHONE ELEMENT
CA2528804A1 (en) * 2003-06-09 2005-01-06 Nantero, Inc Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
JP4133655B2 (ja) * 2003-07-02 2008-08-13 独立行政法人科学技術振興機構 ナノカーボン材料の製造方法、及び配線構造の製造方法
US7201627B2 (en) * 2003-07-31 2007-04-10 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing ultrafine carbon fiber and field emission element
US7289357B2 (en) 2003-08-13 2007-10-30 Nantero, Inc. Isolation structure for deflectable nanotube elements
WO2005048296A2 (en) 2003-08-13 2005-05-26 Nantero, Inc. Nanotube-based switching elements with multiple controls and circuits made from same
US7504051B2 (en) * 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
US7375369B2 (en) * 2003-09-08 2008-05-20 Nantero, Inc. Spin-coatable liquid for formation of high purity nanotube films
US7105851B2 (en) * 2003-09-24 2006-09-12 Intel Corporation Nanotubes for integrated circuits
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
JP3682057B1 (ja) * 2004-05-31 2005-08-10 雅勤 安次富 ナノチューブの位置制御方法、ナノチューブ位置制御用流路パターン及びナノチューブを用いた電子素子
US7700459B2 (en) 2004-06-01 2010-04-20 Nikon Corporation Method for producing electronic device and electronic device
US7658869B2 (en) * 2004-06-03 2010-02-09 Nantero, Inc. Applicator liquid containing ethyl lactate for preparation of nanotube films
US7556746B2 (en) * 2004-06-03 2009-07-07 Nantero, Inc. Method of making an applicator liquid for electronics fabrication process
US7288970B2 (en) * 2004-06-18 2007-10-30 Nantero, Inc. Integrated nanotube and field effect switching device
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7091096B2 (en) * 2004-07-29 2006-08-15 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Method of fabricating carbon nanotube field-effect transistors through controlled electrochemical modification
JP4517071B2 (ja) * 2004-08-12 2010-08-04 独立行政法人産業技術総合研究所 ナノサイズ材料の設置方法
US20080119008A1 (en) * 2004-08-31 2008-05-22 Yuji Miyato Molecular Device and Manufacturing Method for the Same
US8471238B2 (en) * 2004-09-16 2013-06-25 Nantero Inc. Light emitters using nanotubes and methods of making same
KR100601965B1 (ko) * 2004-10-02 2006-07-18 삼성전자주식회사 ｎ형 탄소 나노튜브를 구비한 ｎ형 탄소나노튜브 전계효과트랜지스터 및 그 제조방법
DE102004049453A1 (de) * 2004-10-11 2006-04-20 Infineon Technologies Ag Elektrischer Schaltkreis mit einer Nanostruktur und Verfahren zum Herstellen einer Kontaktierung einer Nanostruktur
WO2006137926A2 (en) * 2004-11-02 2006-12-28 Nantero, Inc. Nanotube esd protective devices and corresponding nonvolatile and volatile nanotube switches
WO2006065937A2 (en) 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
KR100635546B1 (ko) * 2004-12-24 2006-10-17 학교법인 포항공과대학교 전계 효과 트랜지스터 채널 구조를 갖는 스캐닝 프로브마이크로 스코프의 탐침 및 그 제조 방법
KR100653083B1 (ko) 2004-12-27 2006-12-01 삼성전자주식회사 Ｒｆ 스위치
US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US7772125B2 (en) 2005-02-10 2010-08-10 Panasonic Corporation Structure in which cylindrical microstructure is maintained in anisotropic groove, method for fabricating the same, and semiconductor device, TFT driving circuit, panel, display and sensor using the structure in which cylindrical microstructure is maintained in anisotropic groove
US20100127241A1 (en) * 2005-02-25 2010-05-27 The Regents Of The University Of California Electronic Devices with Carbon Nanotube Components
EP1858805A4 (en) * 2005-03-04 2012-05-09 Univ Northwestern SEPARATION OF CARBON NANOTONES IN DICHTEGRADIENTEN
JP4843236B2 (ja) * 2005-03-17 2011-12-21 株式会社リコー 薄膜トランジスタ及びそれを用いた画像表示装置
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
TWI264271B (en) * 2005-05-13 2006-10-11 Delta Electronics Inc Heat sink
JP4864358B2 (ja) * 2005-06-28 2012-02-01 富士通株式会社 カーボンナノ細線トランジスタの製造方法
US7829474B2 (en) * 2005-07-29 2010-11-09 Lg. Display Co., Ltd. Method for arraying nano material and method for fabricating liquid crystal display device using the same
DE102005038121B3 (de) * 2005-08-11 2007-04-12 Siemens Ag Verfahren zur Integration funktioneller Nanostrukturen in mikro- und nanoelektrische Schaltkreise
JP4884723B2 (ja) * 2005-08-25 2012-02-29 富士通株式会社 電界効果型トランジスタ及びその製造方法
CA2621103C (en) * 2005-09-06 2015-11-03 Nantero, Inc. Nanotube fabric-based sensor systems and methods of making same
JP2007184566A (ja) * 2005-12-06 2007-07-19 Canon Inc 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置
WO2008048313A2 (en) * 2005-12-19 2008-04-24 Advanced Technology Materials, Inc. Production of carbon nanotubes
US20070187245A1 (en) * 2006-02-16 2007-08-16 Teco Electric & Machinery Co., Ltd. Method for fabricating nanotube electron emission source by scanning-matrix type electrophoresis deposition
US20070187246A1 (en) * 2006-02-16 2007-08-16 Teco Electric & Machinery Co., Ltd. Method of manufacturing carbon nanotube electron field emitters by dot-matrix sequential electrophoretic deposition
CN101400599B (zh) 2006-03-10 2010-12-01 松下电器产业株式会社 各向异性形状部件的安装方法
WO2007106189A2 (en) * 2006-03-10 2007-09-20 The Trustees Of Columbia University In The City Of New York Method and system to position carbon nanotubes using ac dielectrophoresis
US20070215473A1 (en) * 2006-03-17 2007-09-20 Teco Electric & Machinery Co., Ltd. Method for sequentially electrophoresis depositing carbon nanotube of field emission display
US8956978B1 (en) * 2006-07-31 2015-02-17 The Board Of Trustees Of The Leland Stanford Junior Univerity Semiconductor device, method for manufacturing semiconductor single-walled nanotubes, and approaches therefor
CN101600650B (zh) 2006-08-30 2015-04-29 西北大学 单分散单壁碳纳米管群体及其制造方法
KR101545219B1 (ko) * 2006-10-12 2015-08-18 캄브리오스 테크놀로지즈 코포레이션 나노와이어 기반의 투명 도전체 및 그의 응용
US8101529B2 (en) * 2007-02-15 2012-01-24 Nec Corporation Carbon nanotube resistor, semiconductor device, and manufacturing method thereof
JP2008235880A (ja) 2007-02-21 2008-10-02 Brother Ind Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
US8031514B2 (en) 2007-04-09 2011-10-04 Northeastern University Bistable nanoswitch
JP4381428B2 (ja) 2007-04-10 2009-12-09 シャープ株式会社 微細構造体の配列方法及び微細構造体を配列した基板、並びに集積回路装置及び表示素子
KR101407288B1 (ko) * 2007-04-27 2014-06-16 엘지디스플레이 주식회사 박막 트랜지스터 및 그의 제조 방법
KR101362143B1 (ko) * 2007-04-27 2014-02-13 엘지디스플레이 주식회사 박막 트랜지스터의 제조 방법과, 액정표시장치의 제조 방법
WO2009023349A2 (en) * 2007-05-25 2009-02-19 Kalburge Amol M Integrated nanotube and cmos devices for system-on-chip (soc) applications and method for forming the same
US20080293228A1 (en) * 2007-05-25 2008-11-27 Kalburge Amol M CMOS Compatible Method of Forming Source/Drain Contacts for Self-Aligned Nanotube Devices
US20080296689A1 (en) * 2007-05-29 2008-12-04 Dawei Wang Nanotube dual gate transistor and method of operating the same
FR2916902B1 (fr) 2007-05-31 2009-07-17 Commissariat Energie Atomique Transistor a effet de champ a nanotubes de carbone
KR101443215B1 (ko) * 2007-06-13 2014-09-24 삼성전자주식회사 앰비폴라 물질을 이용한 전계효과 트랜지스터 및 논리회로
KR20100063091A (ko) * 2007-08-29 2010-06-10 노쓰웨스턴유니버시티 분급된 탄소 나노튜브로부터 제조된 투명 전기 전도체 및 그의 제조 방법
KR101396665B1 (ko) * 2007-08-30 2014-05-19 엘지디스플레이 주식회사 어레이 기판 및 이의 제조 방법
KR100927634B1 (ko) 2007-09-07 2009-11-20 한국표준과학연구원 멀티 게이트 나노튜브 소자의 제조 방법 및 그 소자
WO2009031681A1 (ja) * 2007-09-07 2009-03-12 Nec Corporation スイッチング素子及びその製造方法
CN101855938B (zh) * 2007-09-10 2012-05-02 佛罗里达大学研究基金公司 发光晶体管和纵向场效应晶体管
WO2009064842A1 (en) * 2007-11-13 2009-05-22 William Marsh Rice Unvirsity Vertically-stacked electronic devices having conductive carbon films
JPWO2009093698A1 (ja) * 2008-01-24 2011-05-26 日本電気株式会社 カーボンナノチューブ分散膜の形成方法及び半導体素子の製造方法
US20110058126A1 (en) * 2008-02-14 2011-03-10 Yasunobu Okada Semiconductor element, method of manufacturing fine structure arranging substrate, and display element
EP2120274B1 (en) * 2008-05-14 2018-01-03 Tsing Hua University Carbon Nanotube Thin Film Transistor
US8946683B2 (en) * 2008-06-16 2015-02-03 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
FR2936604B1 (fr) * 2008-09-29 2010-11-05 Commissariat Energie Atomique Capteurs chimiques a base de nanotubes de carbone, procede de preparation et utilisations
KR101164407B1 (ko) 2008-12-03 2012-07-09 한국전자통신연구원 라디오 주파수 소자
TWI383949B (zh) * 2008-12-23 2013-02-01 Nat Univ Chung Hsing Production Method of Transferable Carbon Nanotube Conductive Thin Films
US8004018B2 (en) * 2008-12-29 2011-08-23 Nokia Corporation Fabrication method of electronic devices based on aligned high aspect ratio nanoparticle networks
WO2010138506A1 (en) 2009-05-26 2010-12-02 Nanosys, Inc. Methods and systems for electric field deposition of nanowires and other devices
US20110006837A1 (en) * 2009-06-02 2011-01-13 Feng Wang Graphene Device, Method of Investigating Graphene, and Method of Operating Graphene Device
WO2010144856A2 (en) * 2009-06-11 2010-12-16 Etamota Corporation Techniques to enhance selectivity of electrical breakdown of carbon nanotubes
US8574673B2 (en) * 2009-07-31 2013-11-05 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
US8128993B2 (en) * 2009-07-31 2012-03-06 Nantero Inc. Anisotropic nanotube fabric layers and films and methods of forming same
WO2011017660A2 (en) 2009-08-07 2011-02-10 Nanomix, Inc. Magnetic carbon nanotube based biodetection
KR20110035906A (ko) * 2009-09-30 2011-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 커패시터
US8872162B2 (en) 2010-03-10 2014-10-28 Nec Corporation Field-effect transistor and method for manufacturing the same
WO2011135978A1 (ja) * 2010-04-28 2011-11-03 学校法人 慶應義塾 カーボンナノチューブ発光素子、光源及びフォトカプラ
KR101160585B1 (ko) * 2010-07-30 2012-06-28 서울대학교산학협력단 탄소나노튜브를 게이트로 이용한 트랜지스터 및 그 제조방법
KR101223475B1 (ko) * 2010-07-30 2013-01-17 포항공과대학교 산학협력단 탄소 나노 튜브 필름의 제조 방법 및 탄소 나노 튜브 필름 기반 센서
JP5637795B2 (ja) * 2010-10-05 2014-12-10 株式会社東芝 装置
US9051483B2 (en) * 2010-12-28 2015-06-09 Nec Corporation Carbon nanotube ink composition and a coating method thereof and a forming method of a thin film containing carbon nanotubes
US8629010B2 (en) 2011-10-21 2014-01-14 International Business Machines Corporation Carbon nanotube transistor employing embedded electrodes
CN103359718B (zh) * 2012-04-05 2015-07-01 清华大学 石墨烯纳米窄带的制备方法
JP6122598B2 (ja) * 2012-09-27 2017-04-26 シャープ株式会社 Ｌｅｄプリントヘッド
US10089930B2 (en) 2012-11-05 2018-10-02 University Of Florida Research Foundation, Incorporated Brightness compensation in a display
KR102050502B1 (ko) 2013-03-18 2020-01-08 삼성전자주식회사 하이브리드 수직 공진 레이저 및 그 제조방법
KR102234452B1 (ko) * 2013-05-29 2021-04-01 씨에스아이알 전계 효과 트랜지스터, 그리고 복수의 전계 효과 트랜지스터들을 포함하는 가스 검출기
CN104362078B (zh) * 2014-11-19 2017-02-01 沈阳建筑大学 实时反馈的纳米电子器件自动化装配制造方法
CN104726890B (zh) * 2015-02-09 2017-07-04 银基烯碳新材料股份有限公司 一种基于电解法制备纳米活性炭液的方法
CN105702861A (zh) * 2016-02-02 2016-06-22 京东方科技集团股份有限公司 碳纳米管薄膜、包含该薄膜的装置及制备方法、载体基板
US12031982B2 (en) 2020-04-19 2024-07-09 John J. Daniels Using exhaled breath condensate for testing for a biomarker of COVID-19
US12369816B2 (en) 2020-04-19 2025-07-29 John J. Daniels Mask-based diagnostic system using exhaled breath condensate
US12442726B2 (en) 2020-04-19 2025-10-14 John J. Daniels Mask-based testing system for detecting biomarkers in exhaled breath condensate, aerosols and gases
JP7753247B2 (ja) * 2020-04-19 2025-10-14 ジョン・ジェイ・ダニエルズ 呼気凝縮物を用いたマスクベースの診断システム

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963288A (en) * 1987-08-20 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device having sealant and spacers made from the same material
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
TW264575B (enExample) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US6162667A (en) * 1994-03-28 2000-12-19 Sharp Kabushiki Kaisha Method for fabricating thin film transistors
JP3124480B2 (ja) * 1995-12-12 2001-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100386203B1 (ko) * 1996-02-29 2003-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전기광학장치및그제조방법
US6088070A (en) * 1997-01-17 2000-07-11 Semiconductor Energy Laboratory Co., Ltd. Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode
TW379360B (en) * 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP4831850B2 (ja) * 1997-07-08 2011-12-07 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP3919900B2 (ja) * 1997-09-19 2007-05-30 株式会社半導体エネルギー研究所 液晶表示装置およびその作製方法
US6313481B1 (en) * 1998-08-06 2001-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
EP0984492A3 (en) * 1998-08-31 2000-05-17 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising organic resin and process for producing semiconductor device
US6420988B1 (en) * 1998-12-03 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Digital analog converter and electronic device using the same
US6285247B1 (en) * 1999-01-21 2001-09-04 Agere Systems Guardian Corporation Optimized low voltage CMOS operation
EP1031873A3 (en) * 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6680487B1 (en) * 1999-05-14 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same
KR100312694B1 (ko) * 1999-07-16 2001-11-03 김순택 카본 나노튜브 필름을 전자 방출원으로 사용하는 전계 방출 표시 장치
US6617798B2 (en) * 2000-03-23 2003-09-09 Samsung Sdi Co., Ltd. Flat panel display device having planar field emission source
JP2001311963A (ja) * 2000-04-27 2001-11-09 Toshiba Corp 液晶表示装置および液晶表示装置の製造方法
GB2364933B (en) 2000-07-18 2002-12-31 Lg Electronics Inc Method of horizontally growing carbon nanotubes
JP4140180B2 (ja) 2000-08-31 2008-08-27 富士ゼロックス株式会社 トランジスタ
JP2003017508A (ja) 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ

Similar Documents

Publication Publication Date Title
JP2004071654A5 (enExample)
Xia et al. Maxwell–Wagner–Sillars mechanism in the frequency dependence of electrical conductivity and dielectric permittivity of graphene-polymer nanocomposites
RU2012101496A (ru) Графеновое устройство и способ его изготовления
US8497499B2 (en) Method to modify the conductivity of graphene
JP2014529082A5 (enExample)
Mirvakili et al. Vertically Aligned Niobium Nanowire Arrays for Fast‐Charging Micro‐Supercapacitors
JP2008181493A5 (enExample)
JP2007279724A5 (enExample)
WO2008149622A1 (ja) キャパシタ，共振器、フィルタ装置，通信装置、並びに電気回路
WO2013078712A1 (zh) 液晶面板的制作方法及液晶面板、液晶显示装置
JP2005003685A5 (enExample)
TW499793B (en) Distributed constant type noise filter
KR20090106169A (ko) 인덕터 및 그 동작방법
CN107004503B (zh) 用于制造紧凑型微米或纳米电容器的方法和紧凑型微米或纳米电容器
JP2005260227A5 (enExample)
JP5352334B2 (ja) グラフェンと金属電極との電気的接合デバイス、それを用いた電子デバイス，電子集積回路及び光／電子集積回路
TWM443270U (en) Stacked solid electrolytic capacitor package structure
TWI273613B (en) Capacitor structure
CN103594378B (zh) 凹槽结构的悬空石墨烯沟道晶体管的制备方法
TW201929017A (zh) 具有功能性塗層的電容器封裝結構及其製造方法
TW200631043A (en) Capacitor layer forming material, manufacturing method of capacitor layer forming material and printed wiring board provided with built-in capacitor layer obtained by using capacitor layer forming material
Saha et al. A nanocapacitor with giant dielectric permittivity
Prasongkit et al. Mechano-switching devices from carbon wire-carbon nanotube junctions
JP2009199842A (ja) 透明導電膜の製造方法及び電子装置の製造方法
CN205881696U (zh) 一种铝电解电容器的放电料带