JP2004047867A5 - - Google Patents
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- Publication number
- JP2004047867A5 JP2004047867A5 JP2002205299A JP2002205299A JP2004047867A5 JP 2004047867 A5 JP2004047867 A5 JP 2004047867A5 JP 2002205299 A JP2002205299 A JP 2002205299A JP 2002205299 A JP2002205299 A JP 2002205299A JP 2004047867 A5 JP2004047867 A5 JP 2004047867A5
- Authority
- JP
- Japan
- Prior art keywords
- nitride
- semiconductor layer
- layer
- emitting device
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 14
- 150000004767 nitrides Chemical class 0.000 claims 11
- 238000000034 method Methods 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- -1 nitride compound Chemical class 0.000 claims 4
- 229910017464 nitrogen compound Inorganic materials 0.000 claims 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- 150000002830 nitrogen compounds Chemical class 0.000 claims 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000002994 raw material Substances 0.000 claims 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 150000002429 hydrazines Chemical class 0.000 claims 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002205299A JP2004047867A (ja) | 2002-07-15 | 2002-07-15 | 窒化物系半導体発光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002205299A JP2004047867A (ja) | 2002-07-15 | 2002-07-15 | 窒化物系半導体発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004047867A JP2004047867A (ja) | 2004-02-12 |
| JP2004047867A5 true JP2004047867A5 (enExample) | 2005-10-20 |
Family
ID=31710640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002205299A Pending JP2004047867A (ja) | 2002-07-15 | 2002-07-15 | 窒化物系半導体発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2004047867A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4645225B2 (ja) * | 2005-02-24 | 2011-03-09 | 豊田合成株式会社 | 半導体素子の製造方法 |
| JP5047508B2 (ja) | 2006-02-27 | 2012-10-10 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
| JP4234180B2 (ja) | 2007-07-02 | 2009-03-04 | 三菱電機株式会社 | 窒化物系半導体積層構造の製造方法および半導体光素子の製造方法 |
| JP5218117B2 (ja) | 2008-03-18 | 2013-06-26 | 三菱電機株式会社 | 窒化物半導体積層構造及び光半導体装置並びにその製造方法 |
| JP2011151074A (ja) * | 2010-01-19 | 2011-08-04 | Mitsubishi Electric Corp | 窒化物半導体装置の製造方法 |
| JP5545269B2 (ja) | 2011-05-19 | 2014-07-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子及びその製造方法 |
| CN107768493A (zh) * | 2017-10-24 | 2018-03-06 | 江门市奥伦德光电有限公司 | 一种发光效率高的led外延结构的制作方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08316151A (ja) * | 1995-05-17 | 1996-11-29 | Fujitsu Ltd | 半導体の製造方法 |
| JPH09309796A (ja) * | 1996-05-23 | 1997-12-02 | Sony Corp | 窒素系ｉｉｉ−ｖ族化合物半導体の成長方法 |
| JP2001144325A (ja) * | 1999-11-12 | 2001-05-25 | Sony Corp | 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法および半導体素子の製造方法 |
| JP4854829B2 (ja) * | 1999-11-22 | 2012-01-18 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP3561243B2 (ja) * | 2001-06-25 | 2004-09-02 | シャープ株式会社 | 化合物半導体の成長方法及び化合物半導体発光素子 |
-
2002
- 2002-07-15 JP JP2002205299A patent/JP2004047867A/ja active Pending
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