JP2004047867A - 窒化物系半導体発光素子の製造方法 - Google Patents

窒化物系半導体発光素子の製造方法 Download PDF

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JP2004047867A
JP2004047867A JP2002205299A JP2002205299A JP2004047867A JP 2004047867 A JP2004047867 A JP 2004047867A JP 2002205299 A JP2002205299 A JP 2002205299A JP 2002205299 A JP2002205299 A JP 2002205299A JP 2004047867 A JP2004047867 A JP 2004047867A
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layer
nitride
gan
active layer
compound semiconductor
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JP2002205299A
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JP2004047867A5 (enExample
Inventor
Kenji Funato
船戸　健次
Hiroshi Nakajima
中島　博
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Sony Corp
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Sony Corp
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JP2002205299A 2002-07-15 2002-07-15 窒化物系半導体発光素子の製造方法 Pending JP2004047867A (ja)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237254A (ja) * 2005-02-24 2006-09-07 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
US7763486B2 (en) 2007-07-02 2010-07-27 Mitsubishi Electric Corporation Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device
US7923742B2 (en) 2008-03-18 2011-04-12 Mitsubishi Electric Corporation Method for production of a nitride semiconductor laminated structure and an optical semiconductor device
JP2011151074A (ja) * 2010-01-19 2011-08-04 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
US8211726B2 (en) 2006-02-27 2012-07-03 Sharp Kabushiki Kaisha Method of manufacturing nitride semiconductor light emitting device
WO2012157683A1 (ja) * 2011-05-19 2012-11-22 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
CN107768493A (zh) * 2017-10-24 2018-03-06 江门市奥伦德光电有限公司 一种发光效率高的led外延结构的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316151A (ja) * 1995-05-17 1996-11-29 Fujitsu Ltd 半導体の製造方法
JPH09309796A (ja) * 1996-05-23 1997-12-02 Sony Corp 窒素系ｉｉｉ−ｖ族化合物半導体の成長方法
JP2001144325A (ja) * 1999-11-12 2001-05-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法および半導体素子の製造方法
JP2001148546A (ja) * 1999-11-22 2001-05-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002064250A (ja) * 2001-06-25 2002-02-28 Sharp Corp 化合物半導体の成長方法及び化合物半導体発光素子

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316151A (ja) * 1995-05-17 1996-11-29 Fujitsu Ltd 半導体の製造方法
JPH09309796A (ja) * 1996-05-23 1997-12-02 Sony Corp 窒素系ｉｉｉ−ｖ族化合物半導体の成長方法
JP2001144325A (ja) * 1999-11-12 2001-05-25 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体の製造方法および半導体素子の製造方法
JP2001148546A (ja) * 1999-11-22 2001-05-29 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2002064250A (ja) * 2001-06-25 2002-02-28 Sharp Corp 化合物半導体の成長方法及び化合物半導体発光素子

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237254A (ja) * 2005-02-24 2006-09-07 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
US8211726B2 (en) 2006-02-27 2012-07-03 Sharp Kabushiki Kaisha Method of manufacturing nitride semiconductor light emitting device
US7763486B2 (en) 2007-07-02 2010-07-27 Mitsubishi Electric Corporation Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device
US7923742B2 (en) 2008-03-18 2011-04-12 Mitsubishi Electric Corporation Method for production of a nitride semiconductor laminated structure and an optical semiconductor device
JP2011151074A (ja) * 2010-01-19 2011-08-04 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
WO2012157683A1 (ja) * 2011-05-19 2012-11-22 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP2012243934A (ja) * 2011-05-19 2012-12-10 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法
CN103518267A (zh) * 2011-05-19 2014-01-15 丰田合成株式会社 Ⅲ族氮化物半导体发光元件及其制造方法
US9324912B2 (en) 2011-05-19 2016-04-26 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting element and method for producing same
CN107768493A (zh) * 2017-10-24 2018-03-06 江门市奥伦德光电有限公司 一种发光效率高的led外延结构的制作方法

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