JP2003069159A5 - - Google Patents
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- Publication number
- JP2003069159A5 JP2003069159A5 JP2002170110A JP2002170110A JP2003069159A5 JP 2003069159 A5 JP2003069159 A5 JP 2003069159A5 JP 2002170110 A JP2002170110 A JP 2002170110A JP 2002170110 A JP2002170110 A JP 2002170110A JP 2003069159 A5 JP2003069159 A5 JP 2003069159A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- plane
- semiconductor
- layer
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 51
- 150000004767 nitrides Chemical class 0.000 claims 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 229910052594 sapphire Inorganic materials 0.000 claims 3
- 239000010980 sapphire Substances 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002170110A JP3515974B2 (ja) | 2001-06-13 | 2002-06-11 | 窒化物半導体、その製造方法及び窒化物半導体素子 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001178081 | 2001-06-13 | ||
| JP2001-178081 | 2001-06-13 | ||
| JP2002170110A JP3515974B2 (ja) | 2001-06-13 | 2002-06-11 | 窒化物半導体、その製造方法及び窒化物半導体素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003069159A JP2003069159A (ja) | 2003-03-07 |
| JP3515974B2 JP3515974B2 (ja) | 2004-04-05 |
| JP2003069159A5 true JP2003069159A5 (enExample) | 2004-11-18 |
Family
ID=26616804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002170110A Expired - Fee Related JP3515974B2 (ja) | 2001-06-13 | 2002-06-11 | 窒化物半導体、その製造方法及び窒化物半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3515974B2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841001B2 (en) * | 2002-07-19 | 2005-01-11 | Cree, Inc. | Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures |
| JP2005209925A (ja) * | 2004-01-23 | 2005-08-04 | Nichia Chem Ind Ltd | 積層半導体基板 |
| JP4548117B2 (ja) * | 2004-12-28 | 2010-09-22 | ソニー株式会社 | 半導体発光素子の製造方法、集積型半導体発光装置の製造方法、画像表示装置の製造方法および照明装置の製造方法 |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| WO2007112066A2 (en) | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| EP2062290B1 (en) | 2006-09-07 | 2019-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction using aspect ratio trapping |
| US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| US9508890B2 (en) | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7615389B2 (en) * | 2007-05-31 | 2009-11-10 | Corning Incorporated | GaN lasers on ALN substrates and methods of fabrication |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| CN100508229C (zh) * | 2007-08-30 | 2009-07-01 | 鹤山丽得电子实业有限公司 | 一种无掩膜半导体外延片制作方法 |
| JP2010538495A (ja) | 2007-09-07 | 2010-12-09 | アンバーウェーブ・システムズ・コーポレーション | 多接合太陽電池 |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| CN102160145B (zh) | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
| US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
| JP5557180B2 (ja) * | 2009-05-14 | 2014-07-23 | 国立大学法人山口大学 | 半導体発光素子の製造方法 |
| KR20130106926A (ko) * | 2012-03-21 | 2013-10-01 | 서울바이오시스 주식회사 | 질화갈륨계 반도체 소자 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000357820A (ja) | 1999-06-15 | 2000-12-26 | Pioneer Electronic Corp | 窒化ガリウム系半導体発光素子及びその製造方法 |
| JP3557441B2 (ja) | 2000-03-13 | 2004-08-25 | 日本電信電話株式会社 | 窒化物半導体基板およびその製造方法 |
-
2002
- 2002-06-11 JP JP2002170110A patent/JP3515974B2/ja not_active Expired - Fee Related
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