CN101425484B - 氮化物半导体自支撑衬底及使用该衬底的器件 - Google Patents
氮化物半导体自支撑衬底及使用该衬底的器件 Download PDFInfo
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- CN101425484B CN101425484B CN200810179904XA CN200810179904A CN101425484B CN 101425484 B CN101425484 B CN 101425484B CN 200810179904X A CN200810179904X A CN 200810179904XA CN 200810179904 A CN200810179904 A CN 200810179904A CN 101425484 B CN101425484 B CN 101425484B
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- nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2007280595 | 2007-10-29 | ||
JP2007-280595 | 2007-10-29 | ||
JP2007280595 | 2007-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101425484A CN101425484A (zh) | 2009-05-06 |
CN101425484B true CN101425484B (zh) | 2012-07-25 |
Family
ID=40587214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810179904XA Active CN101425484B (zh) | 2007-10-29 | 2008-10-28 | 氮化物半导体自支撑衬底及使用该衬底的器件 |
Country Status (3)
Country | Link |
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US (1) | US8026523B2 (zh) |
JP (1) | JP5262545B2 (zh) |
CN (1) | CN101425484B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010205835A (ja) * | 2009-03-02 | 2010-09-16 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体光素子、窒化ガリウム系半導体光素子を製造する方法、及びエピタキシャルウエハ |
JP2011077386A (ja) * | 2009-09-30 | 2011-04-14 | Sumitomo Electric Ind Ltd | 高電子移動度トランジスタ、エピタキシャル基板、及び高電子移動度トランジスタを作製する方法 |
JP5206734B2 (ja) * | 2010-06-08 | 2013-06-12 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子を作製する方法 |
US9806226B2 (en) | 2010-06-18 | 2017-10-31 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
US8907322B2 (en) | 2010-06-18 | 2014-12-09 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
US8927959B2 (en) | 2010-06-18 | 2015-01-06 | Sensor Electronic Technology, Inc. | Deep ultraviolet light emitting diode |
KR101852519B1 (ko) * | 2010-10-29 | 2018-04-26 | 가부시키가이샤 도쿠야마 | 광학 소자의 제조 방법 |
JP6328557B2 (ja) | 2012-09-11 | 2018-05-23 | 株式会社トクヤマ | 窒化アルミニウム基板およびiii族窒化物積層体 |
JP7401182B2 (ja) | 2018-03-02 | 2023-12-19 | 住友化学株式会社 | GaN積層体およびその製造方法 |
CN112670383B (zh) * | 2020-12-25 | 2023-07-14 | 广东省科学院半导体研究所 | 一种紫外光电器件及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1524653A (zh) * | 2003-02-28 | 2004-09-01 | �����ۺϲ�����ʽ���� | 硬质被覆层发挥耐卷刃性的表面被覆金属陶瓷制切削工具 |
CN1855562A (zh) * | 2005-04-21 | 2006-11-01 | 三星电子株式会社 | 氮化镓基化合物半导体器件 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233391A (ja) | 1998-02-12 | 1999-08-27 | Nippon Telegr & Teleph Corp <Ntt> | 結晶基板とそれを用いた半導体装置およびその製法 |
JP2002016000A (ja) * | 2000-06-27 | 2002-01-18 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体基板 |
US6680959B2 (en) * | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
DE10051242A1 (de) * | 2000-10-17 | 2002-04-25 | Philips Corp Intellectual Pty | Lichtemittierende Vorrichtung mit beschichtetem Leuchtstoff |
JP3696182B2 (ja) * | 2001-06-06 | 2005-09-14 | 松下電器産業株式会社 | 半導体レーザ素子 |
JP2005150287A (ja) * | 2003-11-13 | 2005-06-09 | Hitachi Cable Ltd | Iii−v族窒化物系半導体デバイス及びその製造方法、iii−v族窒化物系半導体基板の製造方法、iii−v族窒化物系半導体基板のロット |
JP5276769B2 (ja) * | 2004-10-01 | 2013-08-28 | 東京電波株式会社 | 六方晶系ウルツ鉱型単結晶、その製造方法、および六方晶系ウルツ鉱型単結晶基板 |
TWI490918B (zh) * | 2006-01-20 | 2015-07-01 | Univ California | 半極性氮化(鋁,銦,鎵,硼)之改良成長方法 |
JP4816277B2 (ja) * | 2006-06-14 | 2011-11-16 | 日立電線株式会社 | 窒化物半導体自立基板及び窒化物半導体発光素子 |
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2008
- 2008-10-07 JP JP2008260962A patent/JP5262545B2/ja active Active
- 2008-10-14 US US12/285,799 patent/US8026523B2/en active Active
- 2008-10-28 CN CN200810179904XA patent/CN101425484B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1524653A (zh) * | 2003-02-28 | 2004-09-01 | �����ۺϲ�����ʽ���� | 硬质被覆层发挥耐卷刃性的表面被覆金属陶瓷制切削工具 |
CN1855562A (zh) * | 2005-04-21 | 2006-11-01 | 三星电子株式会社 | 氮化镓基化合物半导体器件 |
Non-Patent Citations (1)
Title |
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JP特开2002-16000A 2002.01.18 |
Also Published As
Publication number | Publication date |
---|---|
US8026523B2 (en) | 2011-09-27 |
JP5262545B2 (ja) | 2013-08-14 |
JP2009135441A (ja) | 2009-06-18 |
US20090114943A1 (en) | 2009-05-07 |
CN101425484A (zh) | 2009-05-06 |
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