CN1855562A - 氮化镓基化合物半导体器件 - Google Patents

氮化镓基化合物半导体器件 Download PDF

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CN1855562A
CN1855562A CNA2005101246211A CN200510124621A CN1855562A CN 1855562 A CN1855562 A CN 1855562A CN A2005101246211 A CNA2005101246211 A CN A2005101246211A CN 200510124621 A CN200510124621 A CN 200510124621A CN 1855562 A CN1855562 A CN 1855562A
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李成男
白好善
孙重坤
司空坦
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Samsung Electronics Co Ltd
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Abstract

提供了一种氮化镓(GaN)基化合物半导体器件，该器件具有改进在衬底上生长的薄膜的表面特性的结构。该GaN基化合物半导体器件包括：AlxInyGa1－x－yN衬底(0≤x≤1，0≤y≤1，且0≤x+y≤1)，衬底表面相对于(0001)平面朝预定方向倾斜大于0°且小于1°的偏角；以及生长在该衬底上的GaN基化合物半导体层。

Description

氮化镓基化合物半导体器件
技术领域
本发明涉及一种氮化镓(GaN)基化合物半导体器件，更具体地，涉及一种具有改进在衬底上生长的薄膜的表面特性的结构的GaN基化合物半导体器件。
背景技术
在生长于异质型衬底上的传统氮化物基半导体薄膜中，由于晶格参数的差异可能产生缺陷，这降低了器件特性。因此，使用低缺陷GaN衬底生长GaN基半导体器件的薄膜是至关重要的。然而，在GaN衬底上生长薄膜存在着不规则表面形貌的问题，例如小丘、薄膜的结晶度等。尤其是，小丘的产生导致在小丘上生长的薄膜组成中特定组分的偏析(segregation)，使得器件性能降低，薄膜器件的制造工艺困难，并因此降低了良品率。
因此，在使用GaN衬底生长用于光电器件的薄膜时，需要开发通过改善生长在衬底上的薄膜的表面形貌保持或者改进表面特性的技术。
发明内容
本发明提供一种氮化镓(GaN)基化合物半导体器件，其具有改进生长在衬底上的薄膜的表面特性的结构。
根据本发明的一方面，提供一种GaN基化合物半导体器件，其包括：AlxInyGa1-x-yN衬底(0≤x≤1，0≤y≤1，及0≤x+y≤1)，衬底表面朝预定方向相对于(0001)平面倾斜大于0°且小于1°的偏角；以及生长在该衬底表面上的GaN基化合物半导体层。这里，衬底可以掺杂n型或p型杂质。预定方向可以是<11-20>方向或<1-100>方向，在这种情况下，衬底表面的偏角可以大于或等于0.01°且小于1°。
根据本发明的另一方面，提供一种GaN基化合物半导体器件，其包括：AlxInyGa1-x-yN衬底(0≤x≤1，0≤y≤1，及0≤x+y≤1)，衬底表面相对于垂直于无极性方向(non-polar direction)的平面朝预定方向倾斜大于0°且小于等于10°的偏角；以及生长在该衬底表面上的GaN基化合物半导体层。垂直于无极性方向的平面是(11-20)平面、(1-100)平面和(1-102)平面中的一个。衬底可以掺杂n型或p型杂质。优选地，衬底表面的偏角优选大于等于0.1°且小于等于1°。
根据具有上述结构的本发明，提供了一种通过改进生长于衬底上的薄膜的表面特性而具有优异器件特性的GaN基化合物半导体器件。
附图说明
通过参照附图详细说明本发明的示范性实施例，本发明的以上和其它特征和优点将更加显然，附图中：
图1是按照本发明第一实施例的氮化镓(GaN)基化合物半导体器件的示意性透视图；
图2是图1的详细视图；
图3A至3C是光学干涉显微照片，示出了在衬底上以每种表面偏角生长的薄膜的表面形貌；
图4是采用按照本发明第一实施例的GaN基化合物半导体器件的激光二极管(LD)的示意性透视图；
图5是按照本发明第二实施例的GaN基化合物半导体器件的示意性透视图；以及
图6是图5的详细视图。
具体实施方式
下文中，参照示出本发明示范实施例的附图，说明按照本发明的氮化镓(GaN)基化合物半导体器件。描述中，为清楚起见放大了图中所示的层和部分的厚度。
图1是根据本发明第一实施例的氮化镓(GaN)基化合物半导体器件的示意性透视图；图2是图1的详细视图。
参照图1和2，按照本发明第一实施例的GaN基化合物半导体器件包括AlxInyGa1-x-yN衬底11(0≤x≤1，0≤y≤1，且0≤x+y≤1)和通过金属有机化学气相沉积(MOCVD)生长在衬底11表面上的GaN基化合物半导体层20。AlxInyGa1-x-yN衬底11可掺杂n型或p型杂质。衬底11的表面相对于(0001)平面朝预定方向倾斜大于0°且小于1°的偏角。该预定方向可是<11-20>方向或<1-100>方向。
GaN基化合物半导体层20是由AlxInyGa1-x-yN(0≤x≤1，0≤y≤1，且0≤x+y≤1)制成的材料层，在衬底11上形成为单层或多层，以构建单位器件。例如，GaN基化合物半导体层20可包括n型覆层(cladding layer)21、n型光引导层22、多量子阱有源层(MQW)23、p型光引导层24和p型覆层25，它们依次堆叠在衬底11上。n型覆层21和p型覆层25分别由n型氮化铝镓(AlGaN)和p型AlGaN构成。并且，n型光引导层22和p型光引导层24分别由n型GaN和p型GaN构成。MQW23包括由氮化铟镓(InGaN)构成的阱层和由GaN或InGaN构成的势垒层。
就具有这种结构的本发明而言，衬底11表面相对于(0001)平面的偏角控制在0°至1°的范围，由此获得取决于偏角的三种不同类型的GaN基化合物半导体层20的表面形貌。例如，用“θ”指代偏角，分别在0°＜θ≤0.1°，0.1°＜θ≤0.4°，和0.4°＜θ＜1.0°的范围得到三种不同类型的表面形貌，即，小丘(hillock)表面、波状(wavy)表面和类镜面表面。优选地，偏角控制在0.1°至1.0°的范围，从而得到不具有小丘表面的GaN基化合物半导体层。更优选地，偏角控制在0.4°至1.0°的范围，从而得到不具有小丘和波状表面的GaN基化合物半导体层的类镜面表面。
按照本发明，在AlxInyGa1-x-yN衬底11上生长GaN基化合物半导体层20时，通过控制衬底11的偏角，可减少GaN基化合物半导体层20上不规则表面形貌例如小丘的产生所造成的问题。尤其是，可减少小丘附近InGaN量子阱中铟偏析的发生。因此，通过改进在衬底11上生长的薄膜的表面特性，可获得具有优异器件特性的GaN基化合物半导体器件。
图3A至3C是光学干涉显微照片，示出了在衬底上以每种表面偏角生长的薄膜的表面形貌。
图3A至3C示出了以0.019°、0.35°和、0.42°的偏角生长在氮化物基半导体衬底上的GaN基化合物半导体层，分别示出了小丘表面、波状表面和类镜面表面的形态。
图4是采用按照本发明第一实施例的GaN基化合物半导体器件的激光二极管(LD)的示意性透视图。与图2中的第一实施例相比较，在p型覆层25上进一步堆叠p型GaN构成的p型接触层26。此外，p型覆层25和p型接触层26被蚀刻至预定深度，且它们的侧面被保护性绝缘膜27覆盖。而且，在p型接触层26上和AlxInyGa1-x-yN衬底11的底面上分别制成p侧电极28和n例电极31。p侧电极28和n侧电极31分别是镍/金(Ni/Au)和钛/铝(Ti/Al)。
图5是按照本发明第二实施例的GaN基化合物半导体器件的示意性透视图，图6是图5的详细视图。这里，与图1和2中示出的第一实施例相同的元件将省略解释，并使用相同的参考标记。
参照图5和6，按照本发明第二实施例的GaN基化合物半导体器件包括：AlxInyGa1-x-yN衬底12(0≤x≤1，0≤y≤1，且0≤x+y≤1)和通过MOCVD生长在该衬底12上的GaN基化合物半导体层20。AlxInyGa1-x-yN衬底12可掺杂n型或p型杂质。衬底12的表面相对于与无极性方向相垂直的任一平面朝预定方向倾斜大于0°且小于等于10°的偏角，所述平面例如是(11-20)平面、(1-100)平面和(1-102)平面。衬底12表面的偏角可大于等于0.1°且小于等于1°。该预定方向包括与无极性方向相垂直的任一平面上，例如(11-20)平面、(1-100)平面或(1-102)平面上存在的所有方向。例如，当衬底12相对于(1-100)平面具有偏角时，该预定方向可以是存在于(1-100)平面上的<0001>方向。
就具有这种结构的本发明而言，衬底12相对于与无极性方向相垂直的任一平面，例如相对于(11-20)平面、(1-100)平面或(1-102)平面的偏角控制在0°至10°的范围，由此获得取决于偏角的三种不同类型的GaN基化合物半导体层20的表面形貌，即，小丘表面、波状表面和类镜面表面，其效果如上所述。
按照具有上述结构的本发明，可减少在衬底上生长的GaN基化合物半导体层的例如小丘的不规则表面形貌的产生所造成的问题。因此，通过改进在衬底上生长的薄膜的表面特性，可获得具有优异器件特性的GaN基化合物半导体器件。
按照本发明的GaN基化合物半导体器件可应用于光电器件，例如，发光二极管(LED)、激光二极管(LD)，和光探测器，或者应用于其它电子器件。
尽管参照其示范实施例对本发明进行了具体的图示和说明，然而，可理解本发明不应该被这里列举的实施例限制；更确切地，在不违背由权利要求限定的本发明精神和范围下，本领域普通技术人员可做出各种形式和细节上的变化。
本申请要求于2005年4月21日向韩国知识产权局提交的韩国专利申请第10-2005-0033197号的权益，其公开的全文在此作参照引用。

Claims (10)

1.一种氮化镓基化合物半导体器件，包括：
AlxInyGa1-x-yN衬底(0≤x≤1，0≤y≤1，且0≤x+y≤1)，所述衬底表面相对于(0001)平面朝预定方向倾斜大于0°且小于1°的偏角；以及
生长在所述衬底表面上的氮化镓基化合物半导体层。
2.如权利要求1所述的器件，其中，所述衬底掺杂为n型或p型。
3.如权利要求1所述的器件，其中，所述预定方向是<11-20>方向或<1-100>方向。
4.如权利要求3所述的器件，其中，所述衬底表面的所述偏角大于或等于0.01°且小于1°。
5.一种氮化镓基化合物半导体器件，包括：
AlxInyGa1-x-yN衬底(0≤x≤1，0≤y≤1，且0≤x+y≤1)，所述衬底表面相对于与无极性方向相垂直的平面朝预定方向倾斜大于0°且小于等于10°的偏角；以及
生长在所述衬底表面上的氮化镓基化合物半导体层。
6.如权利要求5所述的器件，其中，垂直于所述无极性方向的所述平面是(11-20)平面、(1-100)平面和(1-102)平面中的任意一个。
7.如权利要求5所述的器件，其中，所述衬底掺杂n型或p型杂质。
8.如权利要求5所述的器件，其中，所述衬底表面的所述偏角大于等于0.1°且小于等于1°。
9.如权利要求1所述的器件，其中，所述氮化镓基化合物半导体器件是发光二极管、激光二极管和光探测器中的一种。
10.如权利要求5所述的器件，其中，所述氮化镓基化合物半导体器件是发光二极管、激光二极管和光探测器中的一种。
CNB2005101246211A 2005-04-21 2005-11-14 氮化镓基化合物半导体器件 Expired - Fee Related CN100539212C (zh)

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CN101425484B (zh) * 2007-10-29 2012-07-25 日立电线株式会社 氮化物半导体自支撑衬底及使用该衬底的器件
CN103560191A (zh) * 2008-08-04 2014-02-05 住友电气工业株式会社 GaN基半导体光器件、GaN基半导体光器件的制作方法、外延晶片及GaN基半导体膜的生长方法

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CN103560191A (zh) * 2008-08-04 2014-02-05 住友电气工业株式会社 GaN基半导体光器件、GaN基半导体光器件的制作方法、外延晶片及GaN基半导体膜的生长方法
CN102549778A (zh) * 2009-08-27 2012-07-04 首尔Opto仪器股份有限公司 倾斜基底上的高质量非极性/半极性半导体器件及其制造方法

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