JP2003338519A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2003338519A
JP2003338519A JP2002146321A JP2002146321A JP2003338519A JP 2003338519 A JP2003338519 A JP 2003338519A JP 2002146321 A JP2002146321 A JP 2002146321A JP 2002146321 A JP2002146321 A JP 2002146321A JP 2003338519 A JP2003338519 A JP 2003338519A
Authority
JP
Japan
Prior art keywords
wire
semiconductor device
semiconductor chip
electrode pads
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002146321A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003338519A5 (https=
Inventor
Asao Matsuzawa
朝夫 松澤
Takafumi Nishida
隆文 西田
Yasuyuki Nakajima
靖之 中島
Toshiaki Morita
俊章 守田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Hitachi Solutions Technology Ltd
Original Assignee
Renesas Technology Corp
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp, Hitachi ULSI Systems Co Ltd filed Critical Renesas Technology Corp
Priority to JP2002146321A priority Critical patent/JP2003338519A/ja
Priority to TW92112447A priority patent/TWI297184B/zh
Priority to US10/430,279 priority patent/US6900551B2/en
Priority to KR1020030030463A priority patent/KR20040014167A/ko
Priority to CNB031237061A priority patent/CN100481414C/zh
Publication of JP2003338519A publication Critical patent/JP2003338519A/ja
Priority to US11/035,999 priority patent/US20050121805A1/en
Publication of JP2003338519A5 publication Critical patent/JP2003338519A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/537—Multiple bond wires having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2002146321A 2002-05-21 2002-05-21 半導体装置及びその製造方法 Pending JP2003338519A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002146321A JP2003338519A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法
TW92112447A TWI297184B (en) 2002-05-21 2003-05-07 A semiconductor device and a method of manufacturing the same
US10/430,279 US6900551B2 (en) 2002-05-21 2003-05-07 Semiconductor device with alternate bonding wire arrangement
KR1020030030463A KR20040014167A (ko) 2002-05-21 2003-05-14 반도체장치 및 그 제조방법
CNB031237061A CN100481414C (zh) 2002-05-21 2003-05-20 半导体器件及其制造方法
US11/035,999 US20050121805A1 (en) 2002-05-21 2005-01-18 Semiconductor device and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002146321A JP2003338519A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003338519A true JP2003338519A (ja) 2003-11-28
JP2003338519A5 JP2003338519A5 (https=) 2005-09-29

Family

ID=29545121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002146321A Pending JP2003338519A (ja) 2002-05-21 2002-05-21 半導体装置及びその製造方法

Country Status (5)

Country Link
US (2) US6900551B2 (https=)
JP (1) JP2003338519A (https=)
KR (1) KR20040014167A (https=)
CN (1) CN100481414C (https=)
TW (1) TWI297184B (https=)

Cited By (10)

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KR100603932B1 (ko) 2005-01-31 2006-07-24 삼성전자주식회사 칩-온-보오드 기판을 갖는 반도체 장치
JP2007103423A (ja) * 2005-09-30 2007-04-19 Renesas Technology Corp 半導体装置及びその製造方法
JP2007109917A (ja) * 2005-10-14 2007-04-26 Nec Electronics Corp 半導体装置および半導体装置の製造方法
JP2011155292A (ja) * 2011-04-01 2011-08-11 Renesas Electronics Corp 半導体装置の製造方法
JP2012195459A (ja) * 2011-03-16 2012-10-11 Sharp Corp ワイヤーボンディング方法、及び、半導体装置
US8525306B2 (en) 2010-07-21 2013-09-03 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
CN104765169A (zh) * 2015-02-04 2015-07-08 深圳市华星光电技术有限公司 一种阵列基板的检测线路及阵列基板
WO2017145256A1 (ja) * 2016-02-23 2017-08-31 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US11616033B2 (en) 2021-02-03 2023-03-28 Kioxia Corporation Semiconductor device
US12033903B1 (en) * 2021-12-09 2024-07-09 Amazon Technologies, Inc. High-density microbump and probe pad arrangement for semiconductor components

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JP2005166794A (ja) 2003-12-01 2005-06-23 Ricoh Co Ltd 部品パッケージとプリント配線基板および電子機器
JP3707487B2 (ja) * 2003-12-12 2005-10-19 セイコーエプソン株式会社 半導体装置及び電子デバイス並びにそれらの製造方法
CN100419982C (zh) * 2004-05-31 2008-09-17 松下电器产业株式会社 半导体装置
WO2006090196A1 (en) * 2005-02-23 2006-08-31 Infineon Technologies Ag Rectangular bond pad and method of wire bonding the same with an elongated ball bond
JP3988777B2 (ja) * 2005-07-29 2007-10-10 オムロン株式会社 表面実装用の半導体パッケージおよびその製造方法
DE102006015222B4 (de) * 2006-03-30 2018-01-04 Robert Bosch Gmbh QFN-Gehäuse mit optimierter Anschlussflächengeometrie
JP4942020B2 (ja) * 2006-05-12 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
US7777353B2 (en) * 2006-08-15 2010-08-17 Yamaha Corporation Semiconductor device and wire bonding method therefor
WO2008081630A1 (ja) * 2006-12-29 2008-07-10 Sanyo Electric Co., Ltd. 半導体装置およびその製造方法
TWI357647B (en) * 2007-02-01 2012-02-01 Siliconware Precision Industries Co Ltd Semiconductor substrate structure
TWI333689B (en) * 2007-02-13 2010-11-21 Advanced Semiconductor Eng Semiconductor package
US8922028B2 (en) * 2007-02-13 2014-12-30 Advanced Semiconductor Engineering, Inc. Semiconductor package
US8227917B2 (en) * 2007-10-08 2012-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad design for fine pitch wire bonding
US20090108436A1 (en) * 2007-10-31 2009-04-30 Toshio Fujii Semiconductor package
JP5001903B2 (ja) * 2008-05-28 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP5518381B2 (ja) * 2008-07-10 2014-06-11 株式会社半導体エネルギー研究所 カラーセンサ及び当該カラーセンサを具備する電子機器
JP5656644B2 (ja) * 2008-12-19 2015-01-21 株式会社アドバンテスト 半導体装置、半導体装置の製造方法およびスイッチ回路
JP5595694B2 (ja) * 2009-01-15 2014-09-24 パナソニック株式会社 半導体装置
JP2011003764A (ja) * 2009-06-19 2011-01-06 Renesas Electronics Corp 半導体装置及びその製造方法
US8531013B2 (en) * 2010-06-11 2013-09-10 Casio Computer Co., Ltd. Semiconductor device equipped with bonding wires and manufacturing method of semiconductor device equipped with bonding wires
CN102456812B (zh) * 2010-10-28 2015-08-12 展晶科技(深圳)有限公司 发光二极管封装结构
JP5968713B2 (ja) 2012-07-30 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置
US20160307873A1 (en) * 2015-04-16 2016-10-20 Mediatek Inc. Bonding pad arrangment design for semiconductor package
JP6304700B2 (ja) * 2016-09-26 2018-04-04 株式会社パウデック 半導体パッケージ、モジュールおよび電気機器
JP2018107296A (ja) * 2016-12-27 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN108574158B (zh) * 2017-03-14 2020-10-09 群创光电股份有限公司 显示装置及其制造方法
JP6768569B2 (ja) * 2017-03-21 2020-10-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
KR20230084971A (ko) 2021-12-06 2023-06-13 삼성전자주식회사 반도체 패키지
JP2023147829A (ja) * 2022-03-30 2023-10-13 キヤノン株式会社 記録素子ユニット及び記録素子ユニットの製造方法
KR20230173269A (ko) * 2022-06-16 2023-12-27 삼성전자주식회사 반도체 패키지

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JPH11121526A (ja) * 1997-10-20 1999-04-30 Fujitsu Ltd 半導体素子の実装構造
JP2001338955A (ja) * 2000-05-29 2001-12-07 Texas Instr Japan Ltd 半導体装置及びその製造方法

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US20030218245A1 (en) 2003-11-27
US20050121805A1 (en) 2005-06-09

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