JP2003234477A5 - - Google Patents
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- Publication number
- JP2003234477A5 JP2003234477A5 JP2002033262A JP2002033262A JP2003234477A5 JP 2003234477 A5 JP2003234477 A5 JP 2003234477A5 JP 2002033262 A JP2002033262 A JP 2002033262A JP 2002033262 A JP2002033262 A JP 2002033262A JP 2003234477 A5 JP2003234477 A5 JP 2003234477A5
- Authority
- JP
- Japan
- Prior art keywords
- crystalline semiconductor
- semiconductor film
- insulating film
- film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 134
- 230000015572 biosynthetic process Effects 0.000 claims 29
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 239000012535 impurity Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 14
- 229910052804 chromium Inorganic materials 0.000 claims 8
- 229910052750 molybdenum Inorganic materials 0.000 claims 8
- 229910052715 tantalum Inorganic materials 0.000 claims 8
- 229910052719 titanium Inorganic materials 0.000 claims 8
- 238000002844 melting Methods 0.000 claims 7
- 230000008018 melting Effects 0.000 claims 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 3
- 238000009751 slip forming Methods 0.000 claims 3
- 230000010355 oscillation Effects 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002033262A JP4137460B2 (ja) | 2002-02-08 | 2002-02-08 | 半導体装置の作製方法 |
| US10/357,381 US7709895B2 (en) | 2002-02-08 | 2003-02-04 | Semiconductor device having insulating stripe patterns |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002033262A JP4137460B2 (ja) | 2002-02-08 | 2002-02-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003234477A JP2003234477A (ja) | 2003-08-22 |
| JP2003234477A5 true JP2003234477A5 (https=) | 2005-08-18 |
| JP4137460B2 JP4137460B2 (ja) | 2008-08-20 |
Family
ID=27776107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002033262A Expired - Fee Related JP4137460B2 (ja) | 2002-02-08 | 2002-02-08 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7709895B2 (https=) |
| JP (1) | JP4137460B2 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1326273B1 (en) * | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2003204067A (ja) * | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| JP4011344B2 (ja) * | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6933527B2 (en) * | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
| US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
| US6884668B2 (en) * | 2002-02-22 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| US6847050B2 (en) * | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
| US6812491B2 (en) * | 2002-03-22 | 2004-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory cell and semiconductor memory device |
| US6930326B2 (en) * | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
| US6875998B2 (en) * | 2002-03-26 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing the same, and method of designing the same |
| TWI288443B (en) * | 2002-05-17 | 2007-10-11 | Semiconductor Energy Lab | SiN film, semiconductor device, and the manufacturing method thereof |
| JP2004071696A (ja) * | 2002-08-02 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP2005157272A (ja) * | 2003-11-04 | 2005-06-16 | Seiko Epson Corp | 電気光学装置用基板の製造方法、電気光学装置の製造方法、電気光学装置用基板、電気光学装置および電子機器 |
| JP4539820B2 (ja) * | 2004-05-06 | 2010-09-08 | 光陽工業股▲分▼有限公司 | オートバイのフロント・ボードの取付構造 |
| JP2006166275A (ja) * | 2004-12-10 | 2006-06-22 | Seiko Epson Corp | 水晶デバイスの製造方法 |
| JP2006261188A (ja) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| US7550382B2 (en) * | 2005-05-31 | 2009-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device |
| EP2001047A1 (en) * | 2007-06-07 | 2008-12-10 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
| JP5371144B2 (ja) | 2007-06-29 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法、並びに電子機器 |
| US8441018B2 (en) | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
| US9761417B2 (en) * | 2011-08-10 | 2017-09-12 | Entegris, Inc. | AION coated substrate with optional yttria overlayer |
| KR102103913B1 (ko) | 2012-01-10 | 2020-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| EP3271494A1 (en) | 2015-03-18 | 2018-01-24 | Entegris, Inc. | Articles coated with fluoro-annealed films |
| EP3136446A1 (en) * | 2015-08-28 | 2017-03-01 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Tft device and manufacturing method |
| CN107104138B (zh) * | 2016-02-19 | 2021-04-27 | 硅显示技术有限公司 | 氧化物半导体晶体管 |
Family Cites Families (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330363A (en) * | 1980-08-28 | 1982-05-18 | Xerox Corporation | Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas |
| JPS57157519A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57196522A (en) * | 1981-05-28 | 1982-12-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS58151042A (ja) * | 1982-03-03 | 1983-09-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58178565A (ja) * | 1982-04-12 | 1983-10-19 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS59125663A (ja) * | 1983-01-05 | 1984-07-20 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
| JPS61241909A (ja) * | 1985-04-19 | 1986-10-28 | Agency Of Ind Science & Technol | Ｓｏｉ結晶形成法 |
| JPH0810668B2 (ja) | 1985-10-31 | 1996-01-31 | 旭硝子株式会社 | 多結晶シリコン膜の製造方法 |
| JPH02143417A (ja) * | 1988-11-24 | 1990-06-01 | Sharp Corp | 半導体装置の製造方法 |
| JP3142893B2 (ja) * | 1991-04-24 | 2001-03-07 | 株式会社リコー | 薄膜半導体装置 |
| JP2572003B2 (ja) * | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法 |
| JPH07109573A (ja) * | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
| US6700133B1 (en) * | 1994-03-11 | 2004-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device |
| US5854803A (en) * | 1995-01-12 | 1998-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Laser illumination system |
| JP3727034B2 (ja) | 1995-01-13 | 2005-12-14 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
| JP3284899B2 (ja) * | 1996-10-17 | 2002-05-20 | 松下電器産業株式会社 | 半導体素子及びその製造方法 |
| JP3943245B2 (ja) * | 1997-09-20 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2000068520A (ja) * | 1997-12-17 | 2000-03-03 | Matsushita Electric Ind Co Ltd | 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法 |
| WO1999031719A1 (en) * | 1997-12-17 | 1999-06-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same |
| JP2000183351A (ja) * | 1998-12-11 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
| US6586802B2 (en) * | 1999-01-14 | 2003-07-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| KR100654927B1 (ko) * | 1999-03-04 | 2006-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작방법 |
| JP3897965B2 (ja) | 1999-08-13 | 2007-03-28 | 株式会社半導体エネルギー研究所 | レーザー装置及びレーザーアニール方法 |
| TW487959B (en) * | 1999-08-13 | 2002-05-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| JP3645755B2 (ja) * | 1999-09-17 | 2005-05-11 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
| CN100352022C (zh) * | 1999-12-10 | 2007-11-28 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| JP2001175198A (ja) * | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6780687B2 (en) * | 2000-01-28 | 2004-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device having a heat absorbing layer |
| US6747289B2 (en) * | 2000-04-27 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
| US6746901B2 (en) * | 2000-05-12 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
| TWI221645B (en) * | 2001-01-19 | 2004-10-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| US7115453B2 (en) * | 2001-01-29 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| EP1326273B1 (en) * | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4011344B2 (ja) * | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2003204067A (ja) * | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| US6933527B2 (en) * | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
| US6841797B2 (en) * | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
| US7749818B2 (en) * | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TWI272666B (en) * | 2002-01-28 | 2007-02-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| TWI261358B (en) * | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| US6884668B2 (en) * | 2002-02-22 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| US6847050B2 (en) * | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
| US6812491B2 (en) * | 2002-03-22 | 2004-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory cell and semiconductor memory device |
| US6930326B2 (en) * | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
| US6875998B2 (en) * | 2002-03-26 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing the same, and method of designing the same |
| US6906343B2 (en) * | 2002-03-26 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
-
2002
- 2002-02-08 JP JP2002033262A patent/JP4137460B2/ja not_active Expired - Fee Related
-
2003
- 2003-02-04 US US10/357,381 patent/US7709895B2/en not_active Expired - Fee Related
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