JP2003234478A5 - - Google Patents
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- Publication number
- JP2003234478A5 JP2003234478A5 JP2002033267A JP2002033267A JP2003234478A5 JP 2003234478 A5 JP2003234478 A5 JP 2003234478A5 JP 2002033267 A JP2002033267 A JP 2002033267A JP 2002033267 A JP2002033267 A JP 2002033267A JP 2003234478 A5 JP2003234478 A5 JP 2003234478A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystalline semiconductor
- film
- insulating film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 126
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 238000004519 manufacturing process Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 15
- 230000015572 biosynthetic process Effects 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 14
- 239000012535 impurity Substances 0.000 claims 11
- 229910052804 chromium Inorganic materials 0.000 claims 8
- 229910052750 molybdenum Inorganic materials 0.000 claims 8
- 229910052715 tantalum Inorganic materials 0.000 claims 8
- 229910052719 titanium Inorganic materials 0.000 claims 8
- 239000013078 crystal Substances 0.000 claims 7
- 238000002844 melting Methods 0.000 claims 7
- 230000008018 melting Effects 0.000 claims 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 3
- 238000009751 slip forming Methods 0.000 claims 3
- 230000010355 oscillation Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002033267A JP4137461B2 (ja) | 2002-02-08 | 2002-02-08 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002033267A JP4137461B2 (ja) | 2002-02-08 | 2002-02-08 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003234478A JP2003234478A (ja) | 2003-08-22 |
| JP2003234478A5 true JP2003234478A5 (https=) | 2005-08-18 |
| JP4137461B2 JP4137461B2 (ja) | 2008-08-20 |
Family
ID=27776110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002033267A Expired - Fee Related JP4137461B2 (ja) | 2002-02-08 | 2002-02-08 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4137461B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7161199B2 (en) * | 2004-08-24 | 2007-01-09 | Freescale Semiconductor, Inc. | Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof |
| JP2006261188A (ja) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| US8048749B2 (en) * | 2007-07-26 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57157519A (en) * | 1981-03-23 | 1982-09-29 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57196522A (en) * | 1981-05-28 | 1982-12-02 | Toshiba Corp | Manufacture of semiconductor device |
| JPS58151042A (ja) * | 1982-03-03 | 1983-09-08 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS58178565A (ja) * | 1982-04-12 | 1983-10-19 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JPS59125663A (ja) * | 1983-01-05 | 1984-07-20 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
| JPH02143417A (ja) * | 1988-11-24 | 1990-06-01 | Sharp Corp | 半導体装置の製造方法 |
| JP3142893B2 (ja) * | 1991-04-24 | 2001-03-07 | 株式会社リコー | 薄膜半導体装置 |
| JP2572003B2 (ja) * | 1992-03-30 | 1997-01-16 | 三星電子株式会社 | 三次元マルチチャンネル構造を有する薄膜トランジスタの製造方法 |
| JPH0897431A (ja) * | 1994-09-28 | 1996-04-12 | Fuji Xerox Co Ltd | 半導体装置およびその製造方法 |
| JP3284899B2 (ja) * | 1996-10-17 | 2002-05-20 | 松下電器産業株式会社 | 半導体素子及びその製造方法 |
| JP2000068520A (ja) * | 1997-12-17 | 2000-03-03 | Matsushita Electric Ind Co Ltd | 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法 |
| JP2000183351A (ja) * | 1998-12-11 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
-
2002
- 2002-02-08 JP JP2002033267A patent/JP4137461B2/ja not_active Expired - Fee Related
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