JP4137460B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4137460B2
JP4137460B2 JP2002033262A JP2002033262A JP4137460B2 JP 4137460 B2 JP4137460 B2 JP 4137460B2 JP 2002033262 A JP2002033262 A JP 2002033262A JP 2002033262 A JP2002033262 A JP 2002033262A JP 4137460 B2 JP4137460 B2 JP 4137460B2
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Japan
Prior art keywords
semiconductor film
insulating film
crystalline semiconductor
film
divided
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Expired - Fee Related
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JP2002033262A
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English (en)
Japanese (ja)
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JP2003234477A (ja
JP2003234477A5 (https=
Inventor
舜平 山崎
敦生 磯部
秀和 宮入
英臣 須沢
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002033262A priority Critical patent/JP4137460B2/ja
Priority to US10/357,381 priority patent/US7709895B2/en
Publication of JP2003234477A publication Critical patent/JP2003234477A/ja
Publication of JP2003234477A5 publication Critical patent/JP2003234477A5/ja
Application granted granted Critical
Publication of JP4137460B2 publication Critical patent/JP4137460B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
JP2002033262A 2002-02-08 2002-02-08 半導体装置の作製方法 Expired - Fee Related JP4137460B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002033262A JP4137460B2 (ja) 2002-02-08 2002-02-08 半導体装置の作製方法
US10/357,381 US7709895B2 (en) 2002-02-08 2003-02-04 Semiconductor device having insulating stripe patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002033262A JP4137460B2 (ja) 2002-02-08 2002-02-08 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003234477A JP2003234477A (ja) 2003-08-22
JP2003234477A5 JP2003234477A5 (https=) 2005-08-18
JP4137460B2 true JP4137460B2 (ja) 2008-08-20

Family

ID=27776107

Family Applications (1)

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JP2002033262A Expired - Fee Related JP4137460B2 (ja) 2002-02-08 2002-02-08 半導体装置の作製方法

Country Status (2)

Country Link
US (1) US7709895B2 (https=)
JP (1) JP4137460B2 (https=)

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JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6933527B2 (en) * 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US6884668B2 (en) * 2002-02-22 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6847050B2 (en) * 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6812491B2 (en) * 2002-03-22 2004-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory cell and semiconductor memory device
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6875998B2 (en) * 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
TWI288443B (en) * 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
JP2004071696A (ja) * 2002-08-02 2004-03-04 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2005157272A (ja) * 2003-11-04 2005-06-16 Seiko Epson Corp 電気光学装置用基板の製造方法、電気光学装置の製造方法、電気光学装置用基板、電気光学装置および電子機器
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JP2006166275A (ja) * 2004-12-10 2006-06-22 Seiko Epson Corp 水晶デバイスの製造方法
JP2006261188A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US7550382B2 (en) * 2005-05-31 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device, evaluation method of semiconductor device, and semiconductor device
EP2001047A1 (en) * 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP5371144B2 (ja) 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
US8441018B2 (en) 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
US9761417B2 (en) * 2011-08-10 2017-09-12 Entegris, Inc. AION coated substrate with optional yttria overlayer
KR102103913B1 (ko) 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
EP3271494A1 (en) 2015-03-18 2018-01-24 Entegris, Inc. Articles coated with fluoro-annealed films
EP3136446A1 (en) * 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft device and manufacturing method
CN107104138B (zh) * 2016-02-19 2021-04-27 硅显示技术有限公司 氧化物半导体晶体管

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JP2003204067A (ja) * 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
US6933527B2 (en) * 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US6841797B2 (en) * 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
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Publication number Publication date
US7709895B2 (en) 2010-05-04
JP2003234477A (ja) 2003-08-22
US20030209710A1 (en) 2003-11-13

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