JP2003218687A5 - - Google Patents

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Publication number
JP2003218687A5
JP2003218687A5 JP2002009500A JP2002009500A JP2003218687A5 JP 2003218687 A5 JP2003218687 A5 JP 2003218687A5 JP 2002009500 A JP2002009500 A JP 2002009500A JP 2002009500 A JP2002009500 A JP 2002009500A JP 2003218687 A5 JP2003218687 A5 JP 2003218687A5
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JP
Japan
Prior art keywords
circuit
output
semiconductor integrated
integrated circuit
external
Prior art date
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Application number
JP2002009500A
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English (en)
Japanese (ja)
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JP2003218687A (ja
JP3866111B2 (ja
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Publication date
Priority claimed from JP2002009500A external-priority patent/JP3866111B2/ja
Priority to JP2002009500A priority Critical patent/JP3866111B2/ja
Application filed filed Critical
Priority to US10/309,183 priority patent/US6777997B2/en
Priority to US10/352,238 priority patent/US20030137337A1/en
Publication of JP2003218687A publication Critical patent/JP2003218687A/ja
Priority to US10/865,890 priority patent/US20040222837A1/en
Priority to US11/153,355 priority patent/US7109779B2/en
Publication of JP2003218687A5 publication Critical patent/JP2003218687A5/ja
Publication of JP3866111B2 publication Critical patent/JP3866111B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002009500A 2002-01-18 2002-01-18 半導体集積回路及びバーンイン方法 Expired - Fee Related JP3866111B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002009500A JP3866111B2 (ja) 2002-01-18 2002-01-18 半導体集積回路及びバーンイン方法
US10/309,183 US6777997B2 (en) 2002-01-18 2002-12-04 Semiconductor integrated circuit and a burn-in method thereof
US10/352,238 US20030137337A1 (en) 2002-01-18 2003-01-28 Semiconductor integrated circuit and a burn-in method thereof
US10/865,890 US20040222837A1 (en) 2002-01-18 2004-06-14 Semiconductor integrated circuit and a burn-in method thereof
US11/153,355 US7109779B2 (en) 2002-01-18 2005-06-16 Semiconductor integrated circuit and a burn-in method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002009500A JP3866111B2 (ja) 2002-01-18 2002-01-18 半導体集積回路及びバーンイン方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006237667A Division JP2007049719A (ja) 2006-09-01 2006-09-01 半導体集積回路

Publications (3)

Publication Number Publication Date
JP2003218687A JP2003218687A (ja) 2003-07-31
JP2003218687A5 true JP2003218687A5 (enExample) 2005-07-21
JP3866111B2 JP3866111B2 (ja) 2007-01-10

Family

ID=19191516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002009500A Expired - Fee Related JP3866111B2 (ja) 2002-01-18 2002-01-18 半導体集積回路及びバーンイン方法

Country Status (2)

Country Link
US (4) US6777997B2 (enExample)
JP (1) JP3866111B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347926A (ja) * 2002-05-30 2003-12-05 Sony Corp レベルシフト回路、表示装置および携帯端末
AU2003277555A1 (en) * 2002-11-06 2004-06-07 Nec Corporation Level conversion circuit
TWI229499B (en) * 2003-10-01 2005-03-11 Toppoly Optoelectronics Corp Voltage level shifting circuit
JP4489403B2 (ja) * 2003-10-10 2010-06-23 株式会社ルネサステクノロジ 半導体集積回路装置
GB2421105B (en) * 2003-10-10 2006-08-09 Advanced Risc Mach Ltd Level shifting in a data processing apparatus
US20050268124A1 (en) * 2004-05-25 2005-12-01 Hewlett-Packard Development Company, L.P. Apparatus and method for voltage switching
US20050270065A1 (en) * 2004-06-03 2005-12-08 Dipankar Bhattacharya Coms buffer having higher and lower voltage operation
JP2006303753A (ja) * 2005-04-19 2006-11-02 Renesas Technology Corp 半導体集積回路装置
JP4750599B2 (ja) * 2006-03-29 2011-08-17 シチズンホールディングス株式会社 電子回路
KR101205323B1 (ko) * 2006-09-28 2012-11-27 삼성전자주식회사 리텐션 입/출력 장치를 이용하여 슬립모드를 구현하는시스템 온 칩
JP4823024B2 (ja) * 2006-11-09 2011-11-24 株式会社東芝 レベル変換回路
JP5412992B2 (ja) * 2009-06-26 2014-02-12 富士通セミコンダクター株式会社 集積回路装置及びデータ伝送システム
JP5589853B2 (ja) * 2011-01-05 2014-09-17 富士通セミコンダクター株式会社 レベル変換回路及び半導体装置
US8705282B2 (en) 2011-11-01 2014-04-22 Silicon Storage Technology, Inc. Mixed voltage non-volatile memory integrated circuit with power saving
US8723584B2 (en) * 2012-05-03 2014-05-13 Conexant Systems, Inc. Low power dual voltage mode receiver
CN103513176B (zh) * 2012-06-21 2016-06-01 和硕联合科技股份有限公司 测试主板的屏蔽电路及其屏蔽方法
CN105207658B (zh) * 2014-06-11 2018-03-27 华邦电子股份有限公司 输出缓冲器
KR102387233B1 (ko) * 2015-10-20 2022-04-19 에스케이하이닉스 주식회사 버퍼 회로
US11223359B2 (en) 2016-03-31 2022-01-11 Qualcomm Incorporated Power efficient voltage level translator circuit
CN106788386B (zh) * 2016-11-30 2021-08-06 上海华力微电子有限公司 一种降低热载流子劣化的电平转换电路
JP6873876B2 (ja) * 2017-09-21 2021-05-19 株式会社東芝 駆動回路

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816765A (en) * 1972-06-27 1974-06-11 Rca Corp Digital interface circuit for a random noise generator
US4739193A (en) * 1986-10-30 1988-04-19 Rca Corporation Drive circuit with limited signal transition rate for RFI reduction
JPH07105160B2 (ja) * 1989-05-20 1995-11-13 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
US5216298A (en) * 1989-12-14 1993-06-01 Mitsubishi Denki Kabushiki Kaisha ECL input buffer for BiCMOS
US5315167A (en) * 1992-04-09 1994-05-24 International Business Machines Corporation Voltage burn-in scheme for BICMOS circuits
KR970008141B1 (ko) * 1994-11-15 1997-05-21 엘지반도체 주식회사 반도체장치의 번인회로
JPH098632A (ja) 1995-06-23 1997-01-10 Nec Corp 半導体集積回路
EP0765035B1 (en) * 1995-09-21 2001-12-19 Matsushita Electric Industrial Co., Ltd. Output circuit
JP4074697B2 (ja) * 1997-11-28 2008-04-09 株式会社ルネサステクノロジ 半導体装置
JP3796034B2 (ja) * 1997-12-26 2006-07-12 株式会社ルネサステクノロジ レベル変換回路および半導体集積回路装置
JP2000353947A (ja) 1999-06-10 2000-12-19 Matsushita Electric Ind Co Ltd レベル変換装置
US6353345B1 (en) * 2000-04-04 2002-03-05 Philips Electronics North America Corporation Low cost half bridge driver integrated circuit with capability of using high threshold voltage DMOS
JP3502330B2 (ja) * 2000-05-18 2004-03-02 Ｎｅｃマイクロシステム株式会社 出力回路
JP2002107418A (ja) * 2000-09-28 2002-04-10 Hitachi Ltd 半導体装置の製造方法
JP3532181B2 (ja) * 2001-11-21 2004-05-31 沖電気工業株式会社 電圧トランスレータ
TWI271035B (en) * 2002-01-11 2007-01-11 Samsung Electronics Co Ltd Receiver circuit of semiconductor integrated circuit
JP3935925B2 (ja) * 2002-03-04 2007-06-27 富士通株式会社 出力バッファ回路
US6586974B1 (en) * 2002-05-08 2003-07-01 Agilent Technologies, Inc. Method for reducing short circuit current during power up and power down for high voltage pad drivers with analog slew rate control

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