JP2003146660A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003146660A5 JP2003146660A5 JP2001346939A JP2001346939A JP2003146660A5 JP 2003146660 A5 JP2003146660 A5 JP 2003146660A5 JP 2001346939 A JP2001346939 A JP 2001346939A JP 2001346939 A JP2001346939 A JP 2001346939A JP 2003146660 A5 JP2003146660 A5 JP 2003146660A5
- Authority
- JP
- Japan
- Prior art keywords
- tio
- oxide
- site
- ferroelectric
- sno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052718 tin Inorganic materials 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 11
- 239000010410 layer Substances 0.000 claims 9
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 7
- 229910052788 barium Inorganic materials 0.000 claims 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims 7
- 229910052712 strontium Inorganic materials 0.000 claims 7
- 239000010936 titanium Substances 0.000 claims 7
- 229910052745 lead Inorganic materials 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- 238000004549 pulsed laser deposition Methods 0.000 claims 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 4
- 239000010408 film Substances 0.000 claims 4
- 239000006104 solid solution Substances 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 claims 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 3
- 229910001887 tin oxide Inorganic materials 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 2
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 claims 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000002052 molecular layer Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001346939A JP2003146660A (ja) | 2001-11-13 | 2001-11-13 | 強誘電体および誘電体薄膜コンデンサ、圧電素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001346939A JP2003146660A (ja) | 2001-11-13 | 2001-11-13 | 強誘電体および誘電体薄膜コンデンサ、圧電素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003146660A JP2003146660A (ja) | 2003-05-21 |
| JP2003146660A5 true JP2003146660A5 (https=) | 2005-07-14 |
Family
ID=19160015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001346939A Pending JP2003146660A (ja) | 2001-11-13 | 2001-11-13 | 強誘電体および誘電体薄膜コンデンサ、圧電素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003146660A (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4171908B2 (ja) * | 2004-01-20 | 2008-10-29 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ、及び圧電素子 |
| CN101489952B (zh) | 2006-07-07 | 2013-05-01 | 株式会社村田制作所 | 电介质陶瓷、及陶瓷电子部件、以及叠层陶瓷电容器 |
| US8039131B2 (en) * | 2008-03-11 | 2011-10-18 | Carnegie Institution Of Washington | Class of pure piezoelectric materials |
| JP5152001B2 (ja) * | 2009-01-16 | 2013-02-27 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミックコンデンサ |
| JP5702125B2 (ja) * | 2010-12-03 | 2015-04-15 | 富士フイルム株式会社 | 静電誘導型変換素子 |
| JP2012164727A (ja) * | 2011-02-04 | 2012-08-30 | Fujifilm Corp | 静電容量変化型発電素子 |
| JP6086038B2 (ja) * | 2013-07-01 | 2017-03-01 | 株式会社村田製作所 | 誘電体セラミックの製造方法および誘電体セラミック |
| JP6403600B2 (ja) * | 2015-02-16 | 2018-10-10 | 国立研究開発法人物質・材料研究機構 | 光触媒含有混合粉末、その製造方法及び水素発生方法 |
| EP3564188A1 (en) * | 2018-05-04 | 2019-11-06 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Sntio3 material, method of preparation thereof, use thereof as ferroelectric material and device comprising a ferroelectric material |
-
2001
- 2001-11-13 JP JP2001346939A patent/JP2003146660A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6623865B1 (en) | Lead zirconate titanate dielectric thin film composites on metallic foils | |
| JP4024397B2 (ja) | 強誘電体メモリ装置及びその製造方法 | |
| KR20010014838A (ko) | 실리콘상의 비결정성 유전체 커패시터 | |
| US20100255344A1 (en) | Method of manufacturing thin film device and thin film device manufactured using the same | |
| TWI244660B (en) | High dielectric constant insulating film, thin-film capacitive element, thin-film multilayer capacitor, and method for manufacturing thin-film capacitive element | |
| KR960026808A (ko) | 핀형 커패시터 및 그 제조방법 | |
| JP2003508902A5 (https=) | ||
| JP2003146660A5 (https=) | ||
| JP2008042069A (ja) | 圧電体素子とその製造方法 | |
| WO2017043383A1 (ja) | 圧電素子および圧電素子の製造方法 | |
| JP4706479B2 (ja) | 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子、薄膜積層コンデンサおよび薄膜容量素子の製造方法 | |
| US20190296216A1 (en) | Transparent piezoelectric device and method for manufacturing the same | |
| JPH05235268A (ja) | 強誘電体薄膜の製造方法 | |
| JP2019508900A (ja) | 圧電薄膜素子 | |
| JPH10173140A5 (https=) | ||
| JP2003146660A (ja) | 強誘電体および誘電体薄膜コンデンサ、圧電素子 | |
| JP3144799B2 (ja) | 半導体装置およびその製造方法 | |
| JP4182404B2 (ja) | 強誘電体膜の製膜方法 | |
| JP3419974B2 (ja) | 強誘電体キャパシタの製造方法 | |
| JP3389398B2 (ja) | コンデンサ | |
| JP3210007B2 (ja) | 半導体装置 | |
| JP4058843B2 (ja) | セラミックコンデンサおよびその製造方法 | |
| JP2000252444A (ja) | 薄膜キャパシタ | |
| JP2005286233A (ja) | 薄膜コンデンサ及びその製造方法 | |
| JP2024128363A (ja) | 圧電基板の製造方法および圧電基板 |