JPH10173140A5 - - Google Patents

Info

Publication number
JPH10173140A5
JPH10173140A5 JP1996351916A JP35191696A JPH10173140A5 JP H10173140 A5 JPH10173140 A5 JP H10173140A5 JP 1996351916 A JP1996351916 A JP 1996351916A JP 35191696 A JP35191696 A JP 35191696A JP H10173140 A5 JPH10173140 A5 JP H10173140A5
Authority
JP
Japan
Prior art keywords
film
ferroelectric
lead
electrode
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1996351916A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10173140A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP8351916A priority Critical patent/JPH10173140A/ja
Priority claimed from JP8351916A external-priority patent/JPH10173140A/ja
Publication of JPH10173140A publication Critical patent/JPH10173140A/ja
Publication of JPH10173140A5 publication Critical patent/JPH10173140A5/ja
Pending legal-status Critical Current

Links

JP8351916A 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法 Pending JPH10173140A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8351916A JPH10173140A (ja) 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8351916A JPH10173140A (ja) 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Publications (2)

Publication Number Publication Date
JPH10173140A JPH10173140A (ja) 1998-06-26
JPH10173140A5 true JPH10173140A5 (https=) 2004-07-22

Family

ID=18420498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8351916A Pending JPH10173140A (ja) 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Country Status (1)

Country Link
JP (1) JPH10173140A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3092659B2 (ja) 1997-12-10 2000-09-25 日本電気株式会社 薄膜キャパシタ及びその製造方法
KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
US6421223B2 (en) * 1999-03-01 2002-07-16 Micron Technology, Inc. Thin film structure that may be used with an adhesion layer
JP4573009B2 (ja) * 2000-08-09 2010-11-04 日本電気株式会社 金属酸化物誘電体膜の気相成長方法
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
US8227893B2 (en) 2004-06-23 2012-07-24 Nec Corporation Semiconductor device with capacitor element
JP4519810B2 (ja) * 2006-06-23 2010-08-04 富士フイルム株式会社 強誘電体素子とその製造方法、強誘電体メモリ、及びインクジェット式記録ヘッド
KR100813517B1 (ko) 2006-10-27 2008-03-17 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
KR100858093B1 (ko) * 2007-12-20 2008-09-10 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
CN103999207B (zh) 2011-11-09 2017-07-28 国立研究开发法人科学技术振兴机构 固体电子装置
CN115274298B (zh) * 2022-05-20 2023-10-03 沈阳工业大学 一种锆酸铅纳米复合电介质薄膜及其制备方法

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