JPH10173140A - 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法 - Google Patents

強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Info

Publication number
JPH10173140A
JPH10173140A JP8351916A JP35191696A JPH10173140A JP H10173140 A JPH10173140 A JP H10173140A JP 8351916 A JP8351916 A JP 8351916A JP 35191696 A JP35191696 A JP 35191696A JP H10173140 A JPH10173140 A JP H10173140A
Authority
JP
Japan
Prior art keywords
film
electrode
ferroelectric
thin film
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8351916A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10173140A5 (https=
Inventor
Katsuhiro Aoki
克裕 青木
Ikuko Murayama
育子 村山
Yukio Fukuda
幸夫 福田
Ken Numata
乾 沼田
Akitoshi Nishimura
明俊 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Japan Ltd
Original Assignee
Texas Instruments Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Japan Ltd filed Critical Texas Instruments Japan Ltd
Priority to JP8351916A priority Critical patent/JPH10173140A/ja
Publication of JPH10173140A publication Critical patent/JPH10173140A/ja
Publication of JPH10173140A5 publication Critical patent/JPH10173140A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP8351916A 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法 Pending JPH10173140A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8351916A JPH10173140A (ja) 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8351916A JPH10173140A (ja) 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Publications (2)

Publication Number Publication Date
JPH10173140A true JPH10173140A (ja) 1998-06-26
JPH10173140A5 JPH10173140A5 (https=) 2004-07-22

Family

ID=18420498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8351916A Pending JPH10173140A (ja) 1996-12-11 1996-12-11 強誘電体キャパシタの製造方法及び強誘電体メモリ装置の製造方法

Country Status (1)

Country Link
JP (1) JPH10173140A (https=)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184044B1 (en) 1997-12-10 2001-02-06 Nec Corporation Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure
KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
WO2002013251A1 (en) * 2000-08-09 2002-02-14 Nec Corporation Vapor phase deposition method for metal oxide dielectric film
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
JP2008004782A (ja) * 2006-06-23 2008-01-10 Fujifilm Corp 強誘電体素子とその製造方法、強誘電体メモリ、及びインクジェット式記録ヘッド
KR100813517B1 (ko) 2006-10-27 2008-03-17 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
KR100858093B1 (ko) * 2007-12-20 2008-09-10 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
US8227893B2 (en) 2004-06-23 2012-07-24 Nec Corporation Semiconductor device with capacitor element
US8593784B2 (en) * 1999-03-01 2013-11-26 Round Rock Research, Llc Thin film structure that may be used with an adhesion layer
US9293257B2 (en) 2011-11-09 2016-03-22 Japan Science And Technology Agency Solid-state electronic device including dielectric bismuth niobate film formed from solution
CN115274298A (zh) * 2022-05-20 2022-11-01 沈阳工业大学 一种锆酸铅纳米复合电介质薄膜及其制备方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184044B1 (en) 1997-12-10 2001-02-06 Nec Corporation Thin film capacitor including perovskite-type oxide layers having columnar structure and granular structure
KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
US8593784B2 (en) * 1999-03-01 2013-11-26 Round Rock Research, Llc Thin film structure that may be used with an adhesion layer
JP2002057156A (ja) * 2000-08-09 2002-02-22 Nec Corp 金属酸化物誘電体膜の気相成長方法
WO2002013251A1 (en) * 2000-08-09 2002-02-14 Nec Corporation Vapor phase deposition method for metal oxide dielectric film
US6887716B2 (en) 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
US8227893B2 (en) 2004-06-23 2012-07-24 Nec Corporation Semiconductor device with capacitor element
JP2008004782A (ja) * 2006-06-23 2008-01-10 Fujifilm Corp 強誘電体素子とその製造方法、強誘電体メモリ、及びインクジェット式記録ヘッド
KR100813517B1 (ko) 2006-10-27 2008-03-17 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
KR100858093B1 (ko) * 2007-12-20 2008-09-10 삼성전자주식회사 데이터 저장을 위한 강유전체 박막의 제조방법 및 이를이용한 강유전체 기록매체의 제조방법
US9293257B2 (en) 2011-11-09 2016-03-22 Japan Science And Technology Agency Solid-state electronic device including dielectric bismuth niobate film formed from solution
CN115274298A (zh) * 2022-05-20 2022-11-01 沈阳工业大学 一种锆酸铅纳米复合电介质薄膜及其制备方法
CN115274298B (zh) * 2022-05-20 2023-10-03 沈阳工业大学 一种锆酸铅纳米复合电介质薄膜及其制备方法

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