JP2003146660A5 - - Google Patents

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JP2003146660A5
JP2003146660A5 JP2001346939A JP2001346939A JP2003146660A5 JP 2003146660 A5 JP2003146660 A5 JP 2003146660A5 JP 2001346939 A JP2001346939 A JP 2001346939A JP 2001346939 A JP2001346939 A JP 2001346939A JP 2003146660 A5 JP2003146660 A5 JP 2003146660A5
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oxide
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ferroelectric
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一般式ＡＢＯ3 のぺロブスカイト酸化物において、ＳｎがＡサイト、ＴｉがＢサイトを占めるＳｎＴｉＯ3 を主成分とする単純ぺロブスカイト構造の強誘電体。A ferroelectric substance having a simple perovskite structure, the main component of which is SnTiO 3 in which Sn is an A site and Ti is a B site in a perovskite oxide of the general formula ABO 3 . 一般式ＡＢＯ3 のぺロブスカイト酸化物において、ＰｂまたはＳｎがＡサイト、ＴｉがＢサイトを占める、ＰｂＴｉＯ3 とＳｎＴｉＯ3 との固溶体である（Ｐｂ，Ｓｎ）ＴｉＯ3 を主成分とする単純ぺロブスカイト構造の強誘電体。In the perovskite oxide of the general formula ABO 3 , a simple perovskite mainly composed of (Pb, Sn) TiO 3 , which is a solid solution of PbTiO 3 and SnTiO 3 in which Pb or Sn occupies the A site and Ti occupies the B site. Structure ferroelectric. 一般式ＡＢＯ3 のぺロブスカイト酸化物において、Ｂａ，ＳｒまたはＳｎがＡサイト、ＴｉがＢサイトを占める、（Ｂａ，Ｓｒ）ＴｉＯ3 とＳｎＴｉＯ3との固溶体である（Ｂａ，Ｓｒ，Ｓｎ）ＴｉＯ3 を主成分とする単純ぺロブスカイト構造の強誘電体。In the perovskite oxide of the general formula ABO 3 , Ba, Sr or Sn is a solid solution of (Ba, Sr) TiO 3 and SnTiO 3 occupying an A site and Ti is a B site (Ba, Sr, Sn) TiO 3 A simple perovskite ferroelectric with 3 as its main component. 請求項１ないし３のいずれかに記載の強誘電体の上下に導電性の電極を設けたことを特徴とする誘電体薄膜コンデンサまたは圧電素子。A dielectric thin film capacitor or a piezoelectric element, wherein conductive electrodes are provided above and below the ferroelectric substance according to claim 1. 一般式ＡＢＯ3 のＢサイトをＴｉが占めるぺロブスカイト酸化物の製造方法において、酸化チタン（ＴｉＯ2）をソースとして用いて、分子線エピタキシー法またはパルスレーザー堆積法により製膜する工程を有することを特徴とする強誘電体の製造方法。A method for producing a perovskite oxide in which Ti occupies a B site of the general formula ABO 3 , and having a step of forming a film by molecular beam epitaxy or pulsed laser deposition using titanium oxide (TiO 2 ) as a source. A feature of manufacturing a ferroelectric material. 一般式ＡＢＯ3 のぺロブスカイト酸化物において、ＳｎがＡサイト、ＴｉがＢサイトを占めるＳｎＴｉＯ3 を主成分とする単純ぺロブスカイト構造の強誘電体の製造方法において、酸化チタン（ＴｉＯ2 ）と亜酸化錫（ＳｎＯ）をソースとして用いて、分子線エピタキシー法またはパルスレーザー堆積法により製膜することを特徴とする強誘電体の製造方法。In a perovskite oxide of the general formula ABO 3 , in a manufacturing method of a ferroelectric material having a simple perovskite structure mainly composed of SnTiO 3 in which Sn is an A site and Ti is a B site, titanium oxide (TiO 2 ) and suboxide A method for producing a ferroelectric, characterized in that a film is formed by molecular beam epitaxy or pulsed laser deposition using tin oxide (SnO) as a source. 一般式ＡＢＯ3 のぺロブスカイト酸化物において、ＰｂまたはＳｎがＡサイト、ＴｉがＢサイトを占める、ＰｂＴｉＯ3 とＳｎＴｉＯ3 との固溶体である（Ｐｂ，Ｓｎ）ＴｉＯ3 を主成分とする単純ぺロブスカイト構造の強誘電体の製造方法において、酸化チタン（ＴｉＯ2 ）と亜酸化錫（ＳｎＯ）、酸化鉛（ＰｂＯ）をソースとして用いて、分子線エピタキシー法またはパルスレーザー堆積法により製膜することを特徴とする強誘電体の製造方法。In the perovskite oxide of the general formula ABO 3 , a simple perovskite mainly composed of (Pb, Sn) TiO 3 , which is a solid solution of PbTiO 3 and SnTiO 3 in which Pb or Sn occupies the A site and Ti occupies the B site. In the manufacturing method of a ferroelectric having a structure, a film is formed by molecular beam epitaxy or pulse laser deposition using titanium oxide (TiO 2 ), tin oxide (SnO), and lead oxide (PbO) as a source. A feature of manufacturing a ferroelectric material. 一般式ＡＢＯ3 のぺロブスカイト酸化物において、Ｂａ，ＳｒまたはＳｎがＡサイト、ＴｉがＢサイトを占める、（Ｂａ，Ｓｒ）ＴｉＯ3 とＳｎＴｉＯ3との固溶体である（Ｂａ，Ｓｒ，Ｓｎ）ＴｉＯ3 を主成分とする単純ぺロブスカイト構造の強誘電体の製造方法において、酸化チタン（ＴｉＯ2 ）と酸化バリウム（ＢａＯ）、酸化ストロンチウム（ＳｒＯ）、亜酸化錫（ＳｎＯ）をソースとして用いて、分子線エピタキシー法またはパルスレーザー堆積法により製膜することを特徴とする強誘電体の製造方法。In the perovskite oxide of the general formula ABO 3 , Ba, Sr or Sn is a solid solution of (Ba, Sr) TiO 3 and SnTiO 3 occupying an A site and Ti is a B site (Ba, Sr, Sn) TiO 3 In a method for manufacturing a ferroelectric material having a simple perovskite structure mainly composed of 3 , using titanium oxide (TiO 2 ), barium oxide (BaO), strontium oxide (SrO), tin suboxide (SnO) as a source, A method for producing a ferroelectric material, comprising forming a film by molecular beam epitaxy or pulsed laser deposition. 酸化チタン（ＴｉＯ2 ）と亜酸化錫（ＳｎＯ）をソースとして用い、分子線エピタキシー法またはエキシマレーザーによるパルスレーザー堆積法により、各１分子層のＴｉＯ2 層とＳｎＯ層とを交互に積層し、ＳｎＴｉＯ3 を製膜することを特徴とする強誘電体の製造方法。Using titanium oxide (TiO 2 ) and tin suboxide (SnO) as a source, a single layer of TiO 2 and SnO layers are alternately stacked by molecular beam epitaxy or pulsed laser deposition using excimer laser, A method for producing a ferroelectric, comprising depositing SnTiO 3 . 酸化チタン（ＴｉＯ2 ）と亜酸化錫（ＳｎＯ）、酸化鉛（ＰｂＯ）をソースとして用い、分子線エピタキシー法またはエキシマレーザーによるパルスレーザー堆積法により、各１分子層のＴｉＯ2 層とＳｎＯ層、ＴｉＯ2 層とＰｂＯ層を交互に積層し、（Ｐｂ，Ｓｎ）ＴｉＯ3 を製膜する強誘電体の製造方法。Using titanium oxide (TiO 2 ), tin oxide (SnO), and lead oxide (PbO) as sources, by molecular beam epitaxy or pulsed laser deposition using excimer laser, each TiO 2 layer and SnO layer, A ferroelectric manufacturing method in which TiO 2 layers and PbO layers are alternately stacked to form (Pb, Sn) TiO 3 . 酸化チタン（ＴｉＯ2 ）と酸化バリウム（ＢａＯ）、酸化ストロンチウム（ＳｒＯ）、亜酸化錫（ＳｎＯ）をソースとして用い、分子線エピタキシー法またはエキシマレーザーによるパルスレーザー堆積法により、各１分子層のＴｉＯ2 層とＢａＯ層、ＳｒＯ層、ＳｎＯ層を交互に積層し、（Ｂａ，Ｓｒ，Ｓｎ）ＴｉＯ3 を製膜する強誘電体の製造方法。Using titanium oxide (TiO 2 ), barium oxide (BaO), strontium oxide (SrO), and tin suboxide (SnO) as a source, each molecular layer of TiO 2 by molecular beam epitaxy or excimer laser pulse laser deposition. A ferroelectric manufacturing method in which two layers and a BaO layer, a SrO layer, and a SnO layer are alternately stacked to form (Ba, Sr, Sn) TiO 3 .
JP2001346939A 2001-11-13 2001-11-13 Ferroelectric substance, ferroelectric thin film capacitor, and piezoelectric element Pending JP2003146660A (en)

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JP2003146660A5 true JP2003146660A5 (en) 2005-07-14

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Publication number Priority date Publication date Assignee Title
JP4171908B2 (en) * 2004-01-20 2008-10-29 セイコーエプソン株式会社 Ferroelectric film, ferroelectric memory, and piezoelectric element
WO2008004393A1 (en) 2006-07-07 2008-01-10 Murata Manufacturing Co., Ltd. Dielectric ceramic, ceramic electronic component, and laminated ceramic capacitor
WO2009126199A2 (en) * 2008-03-11 2009-10-15 Carnegie Institution Of Washington New class of pure piezoeletric materials
JP5152001B2 (en) 2009-01-16 2013-02-27 株式会社村田製作所 Dielectric ceramic and multilayer ceramic capacitors
JP5702125B2 (en) * 2010-12-03 2015-04-15 富士フイルム株式会社 Electrostatic induction type conversion element
JP2012164727A (en) * 2011-02-04 2012-08-30 Fujifilm Corp Electrostatic capacity variation type power generation element
JP6086038B2 (en) * 2013-07-01 2017-03-01 株式会社村田製作所 Dielectric ceramic manufacturing method and dielectric ceramic
JP6403600B2 (en) * 2015-02-16 2018-10-10 国立研究開発法人物質・材料研究機構 Photocatalyst-containing mixed powder, production method thereof, and hydrogen generation method
EP3564188A1 (en) * 2018-05-04 2019-11-06 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Sntio3 material, method of preparation thereof, use thereof as ferroelectric material and device comprising a ferroelectric material

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