JP2003133507A5 - - Google Patents

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Publication number
JP2003133507A5
JP2003133507A5 JP2001329687A JP2001329687A JP2003133507A5 JP 2003133507 A5 JP2003133507 A5 JP 2003133507A5 JP 2001329687 A JP2001329687 A JP 2001329687A JP 2001329687 A JP2001329687 A JP 2001329687A JP 2003133507 A5 JP2003133507 A5 JP 2003133507A5
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JP
Japan
Prior art keywords
capacitor
pitch
semiconductor device
wiring
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001329687A
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English (en)
Japanese (ja)
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JP2003133507A (ja
JP3967108B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2001329687A priority Critical patent/JP3967108B2/ja
Priority claimed from JP2001329687A external-priority patent/JP3967108B2/ja
Priority to US10/092,525 priority patent/US7176556B2/en
Publication of JP2003133507A publication Critical patent/JP2003133507A/ja
Publication of JP2003133507A5 publication Critical patent/JP2003133507A5/ja
Priority to US11/600,211 priority patent/US7557014B2/en
Application granted granted Critical
Publication of JP3967108B2 publication Critical patent/JP3967108B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001329687A 2001-10-26 2001-10-26 半導体装置およびその製造方法 Expired - Fee Related JP3967108B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001329687A JP3967108B2 (ja) 2001-10-26 2001-10-26 半導体装置およびその製造方法
US10/092,525 US7176556B2 (en) 2001-10-26 2002-03-08 Semiconductor system-in-package
US11/600,211 US7557014B2 (en) 2001-10-26 2006-11-16 Semiconductor system-in-package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001329687A JP3967108B2 (ja) 2001-10-26 2001-10-26 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2003133507A JP2003133507A (ja) 2003-05-09
JP2003133507A5 true JP2003133507A5 (https=) 2005-07-07
JP3967108B2 JP3967108B2 (ja) 2007-08-29

Family

ID=19145543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001329687A Expired - Fee Related JP3967108B2 (ja) 2001-10-26 2001-10-26 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US7176556B2 (https=)
JP (1) JP3967108B2 (https=)

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JP5275400B2 (ja) 2011-04-18 2013-08-28 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
JP5275401B2 (ja) 2011-04-18 2013-08-28 新光電気工業株式会社 配線基板、半導体装置及び配線基板の製造方法
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JP6136061B2 (ja) * 2012-12-13 2017-05-31 株式会社村田製作所 半導体装置
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JP5569831B1 (ja) * 2013-05-15 2014-08-13 国立大学法人東北大学 マイクロ空室の内壁面処理方法
US10090239B2 (en) 2013-06-26 2018-10-02 Intel Corporation Metal-insulator-metal on-die capacitor with partial vias
JP6339669B2 (ja) 2013-07-08 2018-06-06 モーション・エンジン・インコーポレーテッド Ｍｅｍｓデバイスおよび製造する方法
US10273147B2 (en) 2013-07-08 2019-04-30 Motion Engine Inc. MEMS components and method of wafer-level manufacturing thereof
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US20160276287A1 (en) * 2013-12-06 2016-09-22 Renesas Electronics Corporation Semiconductor device
JPWO2015083289A1 (ja) * 2013-12-06 2017-03-16 ルネサスエレクトロニクス株式会社 半導体装置
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JP2015153978A (ja) * 2014-02-18 2015-08-24 キヤノン株式会社 貫通配線の作製方法
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US11287486B2 (en) 2014-12-09 2022-03-29 Motion Engine, Inc. 3D MEMS magnetometer and associated methods
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