JP2003031611A5 - - Google Patents

Download PDF

Info

Publication number
JP2003031611A5
JP2003031611A5 JP2002142521A JP2002142521A JP2003031611A5 JP 2003031611 A5 JP2003031611 A5 JP 2003031611A5 JP 2002142521 A JP2002142521 A JP 2002142521A JP 2002142521 A JP2002142521 A JP 2002142521A JP 2003031611 A5 JP2003031611 A5 JP 2003031611A5
Authority
JP
Japan
Prior art keywords
metal
discontinuous
integrated circuit
metal layer
circuit according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002142521A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003031611A (ja
Filing date
Publication date
Priority claimed from FR0106591A external-priority patent/FR2824954A1/fr
Application filed filed Critical
Publication of JP2003031611A publication Critical patent/JP2003031611A/ja
Publication of JP2003031611A5 publication Critical patent/JP2003031611A5/ja
Pending legal-status Critical Current

Links

JP2002142521A 2001-05-18 2002-05-17 複数の金属化レベル及び接続パッドを含む集積回路 Pending JP2003031611A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0106591A FR2824954A1 (fr) 2001-05-18 2001-05-18 Plot de connexion d'un circuit integre
FR0106591 2001-05-18

Publications (2)

Publication Number Publication Date
JP2003031611A JP2003031611A (ja) 2003-01-31
JP2003031611A5 true JP2003031611A5 (https=) 2005-09-29

Family

ID=8863445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002142521A Pending JP2003031611A (ja) 2001-05-18 2002-05-17 複数の金属化レベル及び接続パッドを含む集積回路

Country Status (4)

Country Link
US (1) US6822329B2 (https=)
EP (1) EP1261030A1 (https=)
JP (1) JP2003031611A (https=)
FR (1) FR2824954A1 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104761A (en) 1998-08-28 2000-08-15 Sicom, Inc. Constrained-envelope digital-communications transmission system and method therefor
JP3779243B2 (ja) * 2002-07-31 2006-05-24 富士通株式会社 半導体装置及びその製造方法
US7692315B2 (en) * 2002-08-30 2010-04-06 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing the same
US6864578B2 (en) * 2003-04-03 2005-03-08 International Business Machines Corporation Internally reinforced bond pads
US7005369B2 (en) * 2003-08-21 2006-02-28 Intersil American Inc. Active area bonding compatible high current structures
US8274160B2 (en) 2003-08-21 2012-09-25 Intersil Americas Inc. Active area bonding compatible high current structures
WO2005024912A2 (en) * 2003-09-09 2005-03-17 Intel Corporation Methods of processing thick ild layers using spray coating or lamination for c4 wafer level thick metal integrated flow
US6977435B2 (en) * 2003-09-09 2005-12-20 Intel Corporation Thick metal layer integrated process flow to improve power delivery and mechanical buffering
JP2005142553A (ja) * 2003-10-15 2005-06-02 Toshiba Corp 半導体装置
JP2005142351A (ja) * 2003-11-06 2005-06-02 Nec Electronics Corp 半導体装置およびその製造方法
US7629689B2 (en) * 2004-01-22 2009-12-08 Kawasaki Microelectronics, Inc. Semiconductor integrated circuit having connection pads over active elements
JP4242336B2 (ja) * 2004-02-05 2009-03-25 パナソニック株式会社 半導体装置
JP4517843B2 (ja) * 2004-12-10 2010-08-04 エルピーダメモリ株式会社 半導体装置
JP2006245076A (ja) * 2005-03-01 2006-09-14 Matsushita Electric Ind Co Ltd 半導体装置
US7323784B2 (en) * 2005-03-17 2008-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. Top via pattern for bond pad structure
US20060244156A1 (en) * 2005-04-18 2006-11-02 Tao Cheng Bond pad structures and semiconductor devices using the same
JP4671814B2 (ja) 2005-09-02 2011-04-20 パナソニック株式会社 半導体装置
US7626268B2 (en) 2005-10-12 2009-12-01 Infineon Technologies Ag Support structures for semiconductor devices
FR2894716A1 (fr) * 2005-12-09 2007-06-15 St Microelectronics Sa Puce de circuits integres a plots externes et procede de fabrication d'une telle puce
US7456479B2 (en) * 2005-12-15 2008-11-25 United Microelectronics Corp. Method for fabricating a probing pad of an integrated circuit chip
US7592710B2 (en) * 2006-03-03 2009-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad structure for wire bonding
US7459792B2 (en) * 2006-06-19 2008-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Via layout with via groups placed in interlocked arrangement
DE102006046182B4 (de) * 2006-09-29 2010-11-11 Infineon Technologies Ag Halbleiterelement mit einer Stützstruktur sowie Herstellungsverfahren
US7573115B2 (en) * 2006-11-13 2009-08-11 International Business Machines Corporation Structure and method for enhancing resistance to fracture of bonding pads
US7749885B2 (en) 2006-12-15 2010-07-06 Micron Technology, Inc. Semiconductor processing methods, methods of forming contact pads, and methods of forming electrical connections between metal-containing layers
DE102007011126B4 (de) * 2007-03-07 2009-08-27 Austriamicrosystems Ag Halbleiterbauelement mit Anschlusskontaktfläche
US9103884B2 (en) * 2008-03-05 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. De-embedding on-wafer devices
US8148797B2 (en) 2008-06-26 2012-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Chip pad resistant to antenna effect and method
US8581423B2 (en) 2008-11-17 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Double solid metal pad with reduced area
JP2011146563A (ja) * 2010-01-15 2011-07-28 Panasonic Corp 半導体装置
US8381139B2 (en) 2010-11-30 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method for metal correlated via split for double patterning
IT1404587B1 (it) 2010-12-20 2013-11-22 St Microelectronics Srl Struttura di connessione induttiva per uso in un circuito integrato
IT1403475B1 (it) 2010-12-20 2013-10-17 St Microelectronics Srl Struttura di connessione per un circuito integrato con funzione capacitiva
JP5485132B2 (ja) * 2010-12-28 2014-05-07 パナソニック株式会社 半導体装置
CN102593069A (zh) * 2011-01-13 2012-07-18 奇景光电股份有限公司 接合垫结构以及集成电路芯片
US8923357B2 (en) 2011-09-13 2014-12-30 Seagate Technology Llc Semiconductor laser with cathode metal layer disposed in trench region
US8532156B2 (en) 2011-09-13 2013-09-10 Seagate Technology Llc Semiconductor laser with test pads
CN102869189B (zh) * 2012-09-18 2016-03-30 上海华勤通讯技术有限公司 焊盘加固pcb板
CN103857181A (zh) * 2012-12-06 2014-06-11 华为终端有限公司 Pcb板以及具有该pcb板的电子设备
US9773732B2 (en) * 2013-03-06 2017-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for packaging pad structure
US9768221B2 (en) * 2013-06-27 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure layout for semiconductor device
CN104952822A (zh) * 2014-03-25 2015-09-30 中芯国际集成电路制造(上海)有限公司 一种焊盘结构
US9269723B2 (en) * 2014-04-09 2016-02-23 Eastman Kodak Company Printing electronic circuitry logic
JP2016139711A (ja) * 2015-01-28 2016-08-04 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TWI559465B (zh) * 2015-08-14 2016-11-21 恆勁科技股份有限公司 封裝基板及其製作方法
US9922947B2 (en) * 2016-04-28 2018-03-20 Stmicroelectronics S.R.L. Bonding pad structure over active circuitry

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213422A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置およびそのボンディングパッド構造
JP3482779B2 (ja) * 1996-08-20 2004-01-06 セイコーエプソン株式会社 半導体装置およびその製造方法
US6143396A (en) * 1997-05-01 2000-11-07 Texas Instruments Incorporated System and method for reinforcing a bond pad
JP2974022B1 (ja) * 1998-10-01 1999-11-08 ヤマハ株式会社 半導体装置のボンディングパッド構造
JP2000195896A (ja) * 1998-12-25 2000-07-14 Nec Corp 半導体装置
TW430935B (en) * 1999-03-19 2001-04-21 Ind Tech Res Inst Frame type bonding pad structure having a low parasitic capacitance
US6198170B1 (en) * 1999-12-16 2001-03-06 Conexant Systems, Inc. Bonding pad and support structure and method for their fabrication

Similar Documents

Publication Publication Date Title
JP2003031611A5 (https=)
JP2004521496A5 (https=)
JP2020507868A (ja) タッチパネル、その製造方法及びタッチディスプレイ
JP2003031611A (ja) 複数の金属化レベル及び接続パッドを含む集積回路
TW200522237A (en) Flip chip interconnection pad layout
JP2004063667A5 (https=)
JP3954022B2 (ja) 並列分岐構造の螺旋形インダクタ
JP6272173B2 (ja) 配線基板
JP2004165559A5 (https=)
JP4586273B2 (ja) 半導体装置構造
JP2001085465A (ja) 半導体装置
JP2004031520A5 (https=)
JP2000340529A5 (https=)
US20080087988A1 (en) Semiconductor package preventing generation of static electricity therein
EP0096455B2 (en) Multilayer interconnection structure for semiconductor device
KR970063592A (ko) 다층 패드를 구비하는 반도체장치 및 그 제조방법
JP2011003584A5 (ja) 半導体装置および多層配線基板
US7884478B2 (en) Semiconductor apparatus
US6407460B1 (en) Multilayer circuit board
KR100773097B1 (ko) 패드를 갖는 반도체 소자
JP2003258107A5 (https=)
JP2005116788A5 (https=)
US7385297B1 (en) Under-bond pad structures for integrated circuit devices
JPH10247648A5 (https=)
TW200824086A (en) Power supply network