JP3954022B2 - 並列分岐構造の螺旋形インダクタ - Google Patents
並列分岐構造の螺旋形インダクタ Download PDFInfo
- Publication number
- JP3954022B2 JP3954022B2 JP2003523011A JP2003523011A JP3954022B2 JP 3954022 B2 JP3954022 B2 JP 3954022B2 JP 2003523011 A JP2003523011 A JP 2003523011A JP 2003523011 A JP2003523011 A JP 2003523011A JP 3954022 B2 JP3954022 B2 JP 3954022B2
- Authority
- JP
- Japan
- Prior art keywords
- metal line
- lower metal
- parallel
- spiral inductor
- upper metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002184 metal Substances 0.000 claims description 110
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
Claims (4)
- 絶縁膜を挟んで下部に形成された下部金属ライン及び上部に形成された上部金属ラインを含み、前記下部金属ライン及び前記上部金属ラインは前記絶縁膜を貫通するビアコンタクトにより相互に連結された螺旋形インダクタにおいて、
前記上部金属ラインは、周辺から中央に向けて螺旋状に巻き込まれて前記ビアコンタクト及び前記下部金属ラインを経て再び巻き出るように形成され、
前記下部金属ラインは、第1下部金属ライン及び第2下部金属ラインを含んで全体として螺旋状に形成され、
前記第1下部金属ラインは前記ビアコンタクトを通る前記上部金属ラインと交差しつつ別の近接する第1下部金属ラインと相互平行に前記ビアコンタクトの間に配置され、
前記第2下部金属ラインは前記上部金属ラインと同じ方向の電流流れを有するように前記第1下部金属ラインから伸びて前記ビアコンタクトを通じて前記上部金属ラインの所定部分に並列に接続され、前記上部金属ラインと平行に配置されることを特徴とする螺旋形インダクタ。 - 前記第1下部金属ラインは前記第2下部金属ラインに比べて相対的に短いことを特徴とする請求項1に記載の螺旋形インダクタ。
- 前記上部金属ラインと前記下部金属ラインとは前記ビアコンタクトを介して電気的に並列に接続されたことを特徴とする請求項1に記載の螺旋形インダクタ。
- 前記下部金属ラインの面積は、最大Q因子を示す所望の周波数によって決定されることを特徴とする請求項1に記載の螺旋形インダクタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0050742A KR100420948B1 (ko) | 2001-08-22 | 2001-08-22 | 병렬 분기 구조의 나선형 인덕터 |
PCT/KR2001/002270 WO2003019662A1 (en) | 2001-08-22 | 2001-12-26 | Spiral inductor having parallel-branch structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005501418A JP2005501418A (ja) | 2005-01-13 |
JP3954022B2 true JP3954022B2 (ja) | 2007-08-08 |
Family
ID=19713456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003523011A Expired - Fee Related JP3954022B2 (ja) | 2001-08-22 | 2001-12-26 | 並列分岐構造の螺旋形インダクタ |
Country Status (5)
Country | Link |
---|---|
US (1) | US6661325B2 (ja) |
EP (1) | EP1419531A4 (ja) |
JP (1) | JP3954022B2 (ja) |
KR (1) | KR100420948B1 (ja) |
WO (1) | WO2003019662A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6707367B2 (en) * | 2002-07-23 | 2004-03-16 | Broadcom, Corp. | On-chip multiple tap transformer and inductor |
EP1478045B1 (en) * | 2003-05-16 | 2012-06-06 | Panasonic Corporation | Mutual induction circuit |
KR101005264B1 (ko) * | 2003-07-26 | 2011-01-04 | 삼성전자주식회사 | 대칭형 인덕터 소자 |
JP2006049432A (ja) * | 2004-08-02 | 2006-02-16 | Murata Mfg Co Ltd | 積層型電子部品 |
US20060125046A1 (en) * | 2004-12-14 | 2006-06-15 | Hyun Cheol Bae | Integrated inductor and method of fabricating the same |
US7786836B2 (en) * | 2005-07-19 | 2010-08-31 | Lctank Llc | Fabrication of inductors in transformer based tank circuitry |
US7511588B2 (en) * | 2005-07-19 | 2009-03-31 | Lctank Llc | Flux linked LC tank circuits forming distributed clock networks |
US7508280B2 (en) * | 2005-07-19 | 2009-03-24 | Lc Tank Llc | Frequency adjustment techniques in coupled LC tank circuits |
US7250826B2 (en) * | 2005-07-19 | 2007-07-31 | Lctank Llc | Mutual inductance in transformer based tank circuitry |
GB0523969D0 (en) * | 2005-11-25 | 2006-01-04 | Zarlink Semiconductor Ltd | Inductivwe component |
KR100849428B1 (ko) * | 2006-12-06 | 2008-07-30 | 한국전자통신연구원 | 분기구조를 갖는 대칭형 인덕터 및 그 제조 방법 |
JP5034613B2 (ja) * | 2007-03-30 | 2012-09-26 | Tdk株式会社 | Dc/dcコンバータ |
JP2009088161A (ja) * | 2007-09-28 | 2009-04-23 | Fujitsu Media Device Kk | 電子部品 |
KR100959715B1 (ko) * | 2007-12-17 | 2010-05-25 | 주식회사 동부하이텍 | 인덕터 소자 및 그 제조 방법 |
EP2151834A3 (en) * | 2008-08-05 | 2012-09-19 | Nxp B.V. | Inductor assembly |
US8013689B2 (en) * | 2008-09-03 | 2011-09-06 | Applied Micro Circuits Corporation | Integrated circuit inductor with transverse interfaces |
US20120092119A1 (en) * | 2010-10-15 | 2012-04-19 | Xilinx, Inc. | Multiple-loop symmetrical inductor |
KR101626138B1 (ko) | 2014-03-11 | 2016-05-31 | 김준영 | 차량용 증발기 건조장치 |
US9368271B2 (en) * | 2014-07-09 | 2016-06-14 | Industrial Technology Research Institute | Three-dimension symmetrical vertical transformer |
TWI619129B (zh) * | 2015-12-15 | 2018-03-21 | 瑞昱半導體股份有限公司 | 電感結構 |
KR20220169152A (ko) * | 2021-06-18 | 2022-12-27 | 삼성전자주식회사 | 반도체 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7900244A (nl) * | 1979-01-12 | 1980-07-15 | Philips Nv | Vlakke tweelaags electrische spoel. |
JPH04152507A (ja) * | 1990-10-16 | 1992-05-26 | Murata Mfg Co Ltd | インダクタ |
US5610433A (en) * | 1995-03-13 | 1997-03-11 | National Semiconductor Corporation | Multi-turn, multi-level IC inductor with crossovers |
US5545916A (en) | 1994-12-06 | 1996-08-13 | At&T Corp. | High Q integrated inductor |
US5760456A (en) * | 1995-12-21 | 1998-06-02 | Grzegorek; Andrew Z. | Integrated circuit compatible planar inductors with increased Q |
JP2765547B2 (ja) * | 1995-12-27 | 1998-06-18 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP2904086B2 (ja) * | 1995-12-27 | 1999-06-14 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR100225847B1 (ko) * | 1996-10-23 | 1999-10-15 | 윤종용 | 이중 나선형 인덕터를 갖는 반도체장치(semiconductor device having dual spiral inductor) |
DE19739962C2 (de) * | 1997-09-11 | 2000-05-18 | Siemens Ag | Planare, gekoppelte Spulenanordnung |
KR100337950B1 (ko) | 1998-09-15 | 2002-10-04 | 한국과학기술원 | 쏠레노이드인덕터의모놀리식제조방법 |
-
2001
- 2001-08-22 KR KR10-2001-0050742A patent/KR100420948B1/ko not_active IP Right Cessation
- 2001-12-26 WO PCT/KR2001/002270 patent/WO2003019662A1/en active Application Filing
- 2001-12-26 EP EP01274455A patent/EP1419531A4/en not_active Withdrawn
- 2001-12-26 JP JP2003523011A patent/JP3954022B2/ja not_active Expired - Fee Related
- 2001-12-28 US US10/033,395 patent/US6661325B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR20030017746A (ko) | 2003-03-04 |
EP1419531A1 (en) | 2004-05-19 |
US6661325B2 (en) | 2003-12-09 |
EP1419531A4 (en) | 2008-04-16 |
WO2003019662A1 (en) | 2003-03-06 |
KR100420948B1 (ko) | 2004-03-02 |
US20030038697A1 (en) | 2003-02-27 |
JP2005501418A (ja) | 2005-01-13 |
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