JP2003017746A5 - - Google Patents

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Publication number
JP2003017746A5
JP2003017746A5 JP2002128255A JP2002128255A JP2003017746A5 JP 2003017746 A5 JP2003017746 A5 JP 2003017746A5 JP 2002128255 A JP2002128255 A JP 2002128255A JP 2002128255 A JP2002128255 A JP 2002128255A JP 2003017746 A5 JP2003017746 A5 JP 2003017746A5
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JP
Japan
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JP2002128255A
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Japanese (ja)
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JP2003017746A (ja
JP4378070B2 (ja
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Priority claimed from JP2002128255A external-priority patent/JP4378070B2/ja
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Publication of JP2003017746A5 publication Critical patent/JP2003017746A5/ja
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JP2002128255A 1997-01-09 2002-04-30 窒化物半導体素子 Expired - Fee Related JP4378070B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002128255A JP4378070B2 (ja) 1997-01-09 2002-04-30 窒化物半導体素子

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP193797 1997-01-09
JP9-1937 1997-01-09
JP1270797 1997-01-27
JP9-12707 1997-01-27
JP10279397 1997-04-03
JP9-102793 1997-04-03
JP2002128255A JP4378070B2 (ja) 1997-01-09 2002-04-30 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP36401297A Division JP3374737B2 (ja) 1997-01-09 1997-12-16 窒化物半導体素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006333737A Division JP4816434B2 (ja) 1997-01-09 2006-12-11 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003017746A JP2003017746A (ja) 2003-01-17
JP2003017746A5 true JP2003017746A5 (is) 2005-07-28
JP4378070B2 JP4378070B2 (ja) 2009-12-02

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP36401297A Expired - Fee Related JP3374737B2 (ja) 1997-01-09 1997-12-16 窒化物半導体素子
JP2002128255A Expired - Fee Related JP4378070B2 (ja) 1997-01-09 2002-04-30 窒化物半導体素子
JP2002268261A Expired - Fee Related JP3835384B2 (ja) 1997-01-09 2002-09-13 窒化物半導体素子
JP2006333737A Expired - Fee Related JP4816434B2 (ja) 1997-01-09 2006-12-11 窒化物半導体素子

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP36401297A Expired - Fee Related JP3374737B2 (ja) 1997-01-09 1997-12-16 窒化物半導体素子

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2002268261A Expired - Fee Related JP3835384B2 (ja) 1997-01-09 2002-09-13 窒化物半導体素子
JP2006333737A Expired - Fee Related JP4816434B2 (ja) 1997-01-09 2006-12-11 窒化物半導体素子

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JP (4) JP3374737B2 (is)

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JP4360066B2 (ja) * 2001-07-09 2009-11-11 日亜化学工業株式会社 窒化ガリウム系発光素子
JP4278399B2 (ja) * 2003-02-13 2009-06-10 シャープ株式会社 酸化物半導体発光素子
JP4553583B2 (ja) * 2003-12-26 2010-09-29 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
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JP4854178B2 (ja) * 2004-01-28 2012-01-18 住友電気工業株式会社 半導体素子
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JP2005268581A (ja) 2004-03-19 2005-09-29 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子
JP5082444B2 (ja) * 2004-04-28 2012-11-28 三菱化学株式会社 窒化物半導体発光素子
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JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
JP2006108585A (ja) 2004-10-08 2006-04-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4541318B2 (ja) * 2005-04-27 2010-09-08 パナソニック株式会社 窒化物半導体発光・受光素子
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KR101502195B1 (ko) 2007-11-21 2015-03-12 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 및 질화물 반도체의 결정 성장 방법 그리고 질화물 반도체 발광 소자
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US9401452B2 (en) * 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
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JP5880880B2 (ja) * 2013-03-29 2016-03-09 ウシオ電機株式会社 窒化物発光素子
JP5974980B2 (ja) * 2013-05-31 2016-08-23 ウシオ電機株式会社 窒化物半導体発光素子
JP6025058B2 (ja) * 2013-07-30 2016-11-16 ウシオ電機株式会社 窒化物半導体発光素子
KR20160003845A (ko) * 2013-05-31 2016-01-11 우시오덴키 가부시키가이샤 질화물 반도체 발광 소자 및 그것의 제조 방법
JP5907210B2 (ja) * 2014-05-26 2016-04-26 株式会社リコー 半導体装置の製造方法
KR102237111B1 (ko) * 2014-07-28 2021-04-08 엘지이노텍 주식회사 발광소자 및 조명시스템
KR102212781B1 (ko) * 2014-07-29 2021-02-05 엘지이노텍 주식회사 발광소자 및 조명시스템
JP2016054321A (ja) * 2015-12-08 2016-04-14 株式会社リコー 半導体装置
CN113964224B (zh) * 2021-12-22 2022-04-01 至芯半导体(杭州)有限公司 半导体紫外探测器芯片及其外延结构
CN114068741B (zh) * 2022-01-17 2022-04-19 至善时代智能科技(北京)有限公司 一种紫外探测器芯片

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