JP2002544669A - スマートカードに組み込むための薄化チップ取扱方法 - Google Patents

スマートカードに組み込むための薄化チップ取扱方法

Info

Publication number
JP2002544669A
JP2002544669A JP2000617491A JP2000617491A JP2002544669A JP 2002544669 A JP2002544669 A JP 2002544669A JP 2000617491 A JP2000617491 A JP 2000617491A JP 2000617491 A JP2000617491 A JP 2000617491A JP 2002544669 A JP2002544669 A JP 2002544669A
Authority
JP
Japan
Prior art keywords
smart card
chip
adhesive layer
wafer
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000617491A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002544669A5 (https=
Inventor
グラスル，トーマス
ハギリ−テウラニ，ヤーヤ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Giesecke and Devrient GmbH
Original Assignee
Giesecke and Devrient GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Giesecke and Devrient GmbH filed Critical Giesecke and Devrient GmbH
Publication of JP2002544669A publication Critical patent/JP2002544669A/ja
Publication of JP2002544669A5 publication Critical patent/JP2002544669A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/699—Insulating or insulated package substrates; Interposers; Redistribution layers for flat cards, e.g. credit cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/603—Formed on wafers or substrates before dicing and remaining on chips after dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members

Landscapes

  • Credit Cards Or The Like (AREA)
JP2000617491A 1999-05-07 2000-05-04 スマートカードに組み込むための薄化チップ取扱方法 Pending JP2002544669A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19921230A DE19921230B4 (de) 1999-05-07 1999-05-07 Verfahren zum Handhaben von gedünnten Chips zum Einbringen in Chipkarten
DE19921230.9 1999-05-07
PCT/EP2000/003988 WO2000068990A1 (de) 1999-05-07 2000-05-04 Verfahren zum handhaben von gedünnten chips zum einbringen in chipkarten

Publications (2)

Publication Number Publication Date
JP2002544669A true JP2002544669A (ja) 2002-12-24
JP2002544669A5 JP2002544669A5 (https=) 2007-06-28

Family

ID=7907399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000617491A Pending JP2002544669A (ja) 1999-05-07 2000-05-04 スマートカードに組み込むための薄化チップ取扱方法

Country Status (6)

Country Link
EP (1) EP1183726A1 (https=)
JP (1) JP2002544669A (https=)
CN (1) CN1157779C (https=)
AU (1) AU4561200A (https=)
DE (1) DE19921230B4 (https=)
WO (1) WO2000068990A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300490A (ja) * 2007-05-30 2008-12-11 Tokyo Ohka Kogyo Co Ltd 剥がし装置、接着剤の溶解方法、及び剥離方法
JP2016063092A (ja) * 2014-09-18 2016-04-25 芝浦メカトロニクス株式会社 積層体製造装置、積層体、分離装置及び積層体製造方法

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TW522531B (en) 2000-10-20 2003-03-01 Matsushita Electric Industrial Co Ltd Semiconductor device, method of manufacturing the device and mehtod of mounting the device
FR2823012B1 (fr) * 2001-04-03 2004-05-21 Commissariat Energie Atomique Procede de transfert selectif d'au moins un element d'un support initial sur un support final
DE10117880B4 (de) * 2001-04-10 2009-01-29 Mühlbauer Ag Verfahren zum Vereinzeln von elektronischen Bauteilen aus einem Verbund
US6964086B2 (en) * 2002-03-04 2005-11-15 Matsushita Electric Industrial Co., Ltd. Method of manufacturing thin film piezoelectric element, and element housing jig
US6943056B2 (en) 2002-04-16 2005-09-13 Renesas Technology Corp. Semiconductor device manufacturing method and electronic equipment using same
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
DE10339559B4 (de) * 2003-08-26 2006-03-02 W.C. Heraeus Gmbh Verfahren zur Lagebestimmung von Bauelementträgern
DE10341186A1 (de) * 2003-09-06 2005-03-31 Martin Michalk Verfahren und Vorrichtung zum Kontaktieren von Halbleiterchips
GB2412786A (en) * 2004-03-24 2005-10-05 E2V Tech Uk Ltd Method and apparatus for manufacturing chip scale components or microcomponents
KR20070039126A (ko) * 2004-07-09 2007-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｉｃ칩 및 그 제조방법
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik
JP5305655B2 (ja) 2004-07-30 2013-10-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 薄膜技術による半導体チップの製造方法および薄膜半導体チップ
US8728937B2 (en) 2004-07-30 2014-05-20 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips using thin film technology
FR2878076B1 (fr) * 2004-11-17 2007-02-23 St Microelectronics Sa Amincissement d'une plaquette semiconductrice
DE102004059599B3 (de) * 2004-12-09 2006-08-17 Infineon Technologies Ag Verfahren zum Aufbringen einer Klebstoffschicht auf dünngeschliffene Halbleiterchips eines Halbleiterwafers
DE102006032821B4 (de) * 2006-07-14 2008-04-10 Mühlbauer Ag Verfahren und Vorrichtung zur Herstellung einer Vielzahl von Chipkarten mit einer klebstofffreien Fixierung der Chipmodule
JP5248518B2 (ja) * 2006-11-24 2013-07-31 フラウンホッファー−ゲゼルシャフト・ツァー・フォデラング・デル・アンゲワンテン・フォーシュング・エー．ファウ． 電子、特に微細電子機能群とその製造方法
DE102010025774A1 (de) 2010-07-01 2012-01-05 Giesecke & Devrient Gmbh Verfahren zur Herstellung eines Inlays für einen tragbaren Datenträger und Inlay
CN114334678A (zh) * 2020-09-30 2022-04-12 日月光半导体制造股份有限公司 形成半导体封装结构的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280660A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 半導体装置の製造方法
JPH03166750A (ja) * 1989-11-27 1991-07-18 Nippon Mining Co Ltd 半導体装置の製造方法
JPH03286553A (ja) * 1990-04-03 1991-12-17 Furukawa Electric Co Ltd:The ダイシング方法
JPH07297171A (ja) * 1994-04-11 1995-11-10 At & T Corp スマートカードのための強靱で柔軟性に富む薄型ダイ
JPH08258471A (ja) * 1995-01-26 1996-10-08 Giesecke & Devrient Gmbh カード本体に電子モジュールを取り付ける方法、この方法で製造したデータ媒体、およびこの方法を実施するための溶接装置
WO1997021243A1 (fr) * 1995-12-04 1997-06-12 Hitachi, Ltd. Procede pour traiter des tranches de semi-conducteur, procede pour fabriquer une carte a circuit imprime et support
JPH1191275A (ja) * 1997-09-25 1999-04-06 Dainippon Printing Co Ltd 非接触型ｉｃカードの製造方法および非接触型ｉｃカード
JP2000040677A (ja) * 1998-07-23 2000-02-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法

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DE3122981A1 (de) * 1981-06-10 1983-01-05 GAO Gesellschaft für Automation und Organisation mbH, 8000 München Verfahren zum einbau von ic-bausteinen in ausweiskarten
JPS61112345A (ja) * 1984-11-07 1986-05-30 Toshiba Corp 半導体装置の製造方法
GB2221470B (en) * 1985-12-27 1990-09-05 Fsk Kk Adhesive sheet suitable for semiconductor wafer processing
DE3639630A1 (de) * 1986-11-20 1988-06-01 Gao Ges Automation Org Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben
DE3901402A1 (de) * 1989-01-19 1990-07-26 Telefonbau & Normalzeit Gmbh Verfahren zur herstellung einer chipkarte
JP2874279B2 (ja) * 1990-05-10 1999-03-24 三菱電機株式会社 薄型半導体装置の製造方法
JP2610703B2 (ja) * 1990-09-05 1997-05-14 住友電気工業株式会社 半導体素子の製造方法
US5268065A (en) * 1992-12-21 1993-12-07 Motorola, Inc. Method for thinning a semiconductor wafer
FR2701139B1 (fr) * 1993-02-01 1995-04-21 Solaic Sa Procédé pour l'implantation d'un micro-circuit sur un corps de carte intelligente et/ou à mémoire, et carte comportant un micro-circuit ainsi implanté.
ZA941671B (en) * 1993-03-11 1994-10-12 Csir Attaching an electronic circuit to a substrate.
FR2715501B1 (fr) * 1994-01-26 1996-04-05 Commissariat Energie Atomique Procédé de dépôt de lames semiconductrices sur un support.
DE29502080U1 (de) * 1995-02-09 1995-03-23 Interlock Ag, Schlieren Vorrichtung zur Herstellung von Ausweiskarten und danach hergestellte Ausweiskarte
DE19602821C1 (de) * 1996-01-26 1997-06-26 Siemens Ag Verfahren zur Herstellung einer Datenkarte
EP0824301A3 (en) * 1996-08-09 1999-08-11 Hitachi, Ltd. Printed circuit board, IC card, and manufacturing method thereof
EP0858050A3 (en) * 1997-02-07 2001-03-28 Keylink Gestao e Investimentos Lda Procedure for the continuous manufacture of microchip carrier cards and cards obtained via the seid procedure
DE19708615C1 (de) * 1997-03-03 1998-07-23 Siemens Ag Chipkartenmodul und diesen umfassende Chipkarte
DE19732644C1 (de) * 1997-07-29 1998-11-12 Siemens Ag Verfahren zur Herstellung einer Chipkarte für kontaktlose Daten- und/oder Energieübertragung sowie Chipkarte
AU3144899A (en) * 1998-03-14 1999-10-11 Michael Stromberg Method and device for treating wafers presenting components during thinning of the wafer and separation of the components

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280660A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 半導体装置の製造方法
JPH03166750A (ja) * 1989-11-27 1991-07-18 Nippon Mining Co Ltd 半導体装置の製造方法
JPH03286553A (ja) * 1990-04-03 1991-12-17 Furukawa Electric Co Ltd:The ダイシング方法
JPH07297171A (ja) * 1994-04-11 1995-11-10 At & T Corp スマートカードのための強靱で柔軟性に富む薄型ダイ
JPH08258471A (ja) * 1995-01-26 1996-10-08 Giesecke & Devrient Gmbh カード本体に電子モジュールを取り付ける方法、この方法で製造したデータ媒体、およびこの方法を実施するための溶接装置
WO1997021243A1 (fr) * 1995-12-04 1997-06-12 Hitachi, Ltd. Procede pour traiter des tranches de semi-conducteur, procede pour fabriquer une carte a circuit imprime et support
JPH1191275A (ja) * 1997-09-25 1999-04-06 Dainippon Printing Co Ltd 非接触型ｉｃカードの製造方法および非接触型ｉｃカード
JP2000040677A (ja) * 1998-07-23 2000-02-08 Nippon Telegr & Teleph Corp <Ntt> 半導体素子の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300490A (ja) * 2007-05-30 2008-12-11 Tokyo Ohka Kogyo Co Ltd 剥がし装置、接着剤の溶解方法、及び剥離方法
JP2016063092A (ja) * 2014-09-18 2016-04-25 芝浦メカトロニクス株式会社 積層体製造装置、積層体、分離装置及び積層体製造方法

Also Published As

Publication number Publication date
AU4561200A (en) 2000-11-21
DE19921230A1 (de) 2000-11-09
CN1157779C (zh) 2004-07-14
DE19921230B4 (de) 2009-04-02
WO2000068990A1 (de) 2000-11-16
EP1183726A1 (de) 2002-03-06
CN1350701A (zh) 2002-05-22

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