JP2002538604A - ポリマー層の処理方法 - Google Patents

ポリマー層の処理方法

Info

Publication number
JP2002538604A
JP2002538604A JP2000601683A JP2000601683A JP2002538604A JP 2002538604 A JP2002538604 A JP 2002538604A JP 2000601683 A JP2000601683 A JP 2000601683A JP 2000601683 A JP2000601683 A JP 2000601683A JP 2002538604 A JP2002538604 A JP 2002538604A
Authority
JP
Japan
Prior art keywords
layer
plasma
power supply
value
heating step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000601683A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002538604A5 (https=
Inventor
マクネイル，ジョン
ビークマン，ナット
ポール ウィルビー，アンソニー
Original Assignee
トリコン ホールディングス リミティド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9904427.3A external-priority patent/GB9904427D0/en
Priority claimed from GBGB9922801.7A external-priority patent/GB9922801D0/en
Priority claimed from GB0000780A external-priority patent/GB0000780D0/en
Application filed by トリコン ホールディングス リミティド filed Critical トリコン ホールディングス リミティド
Publication of JP2002538604A publication Critical patent/JP2002538604A/ja
Publication of JP2002538604A5 publication Critical patent/JP2002538604A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/059—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by reflowing or applying pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Drying Of Semiconductors (AREA)
JP2000601683A 1999-02-26 2000-02-24 ポリマー層の処理方法 Pending JP2002538604A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GBGB9904427.3A GB9904427D0 (en) 1999-02-26 1999-02-26 Method treating an insulating layer
GB9904427.3 1999-02-26
GB9922801.7 1999-09-28
GBGB9922801.7A GB9922801D0 (en) 1999-09-28 1999-09-28 A method of processing a polymer layer
GB0000780A GB0000780D0 (en) 2000-01-14 2000-01-14 A method of processing a polymer layer
GB0000780.7 2000-01-14
PCT/GB2000/000671 WO2000051174A1 (en) 1999-02-26 2000-02-24 A method of processing a polymer layer

Publications (2)

Publication Number Publication Date
JP2002538604A true JP2002538604A (ja) 2002-11-12
JP2002538604A5 JP2002538604A5 (https=) 2007-04-05

Family

ID=27255468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000601683A Pending JP2002538604A (ja) 1999-02-26 2000-02-24 ポリマー層の処理方法

Country Status (6)

Country Link
US (2) US6653247B2 (https=)
JP (1) JP2002538604A (https=)
AU (1) AU2814000A (https=)
DE (1) DE10083897T1 (https=)
GB (1) GB2361809B (https=)
WO (1) WO2000051174A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100989107B1 (ko) * 2003-03-31 2010-10-25 인터내셔널 비지니스 머신즈 코포레이션 다층 포토레지스트 건식 현상을 위한 방법 및 장치
US8048325B2 (en) 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
WO2020066669A1 (ja) * 2018-09-27 2020-04-02 Jsr株式会社 半導体基板の処理方法

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) * 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
WO2000051174A1 (en) 1999-02-26 2000-08-31 Trikon Holdings Limited A method of processing a polymer layer
JP2003503849A (ja) 1999-06-26 2003-01-28 トリコン ホールディングス リミティド 基材上にフィルムを形成する方法及び装置
US7067414B1 (en) * 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US6794311B2 (en) * 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
FI118244B (fi) 2001-06-27 2007-08-31 Nokia Corp Otsikkokenttien kompressiotunnisteen välittäminen datapakettiyhteydellä
GB0117600D0 (en) * 2001-07-19 2001-09-12 Trikon Holdings Ltd Semiconductor structure
DE10146146B4 (de) 2001-09-19 2004-02-05 Infineon Technologies Ag Verfahren zur elektrischen Isolation nebeneinander liegender metallischer Leiterbahnen und Halbleiterbauelement mit voneinander isolierten metallischen Leiterbahnen
US7247252B2 (en) * 2002-06-20 2007-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of avoiding plasma arcing during RIE etching
US6642139B1 (en) * 2002-06-28 2003-11-04 Macronix International Co., Ltd. Method for forming interconnection structure in an integration circuit
CN100341121C (zh) * 2003-09-10 2007-10-03 台湾积体电路制造股份有限公司 介电层的改质方法与其在镶嵌式金属制程的应用
KR100854809B1 (ko) * 2003-11-11 2008-08-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법과, 프로그램을 기록한 기억 매체
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
JP4837370B2 (ja) 2005-12-05 2011-12-14 東京エレクトロン株式会社 成膜方法
WO2007080944A1 (ja) * 2006-01-13 2007-07-19 Tokyo Electron Limited 多孔質膜の成膜方法およびコンピュータ可読記録媒体
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US8278224B1 (en) 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
TWI579916B (zh) 2009-12-09 2017-04-21 諾菲勒斯系統公司 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
US8685867B1 (en) 2010-12-09 2014-04-01 Novellus Systems, Inc. Premetal dielectric integration process
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법
CN113728415B (zh) 2019-04-19 2025-05-16 朗姆研究公司 原子层沉积期间的快速冲洗清扫

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118007A (ja) * 1993-08-31 1995-05-09 Fujitsu Ltd 半導体装置の製造方法
JPH0793296B1 (https=) * 1991-01-08 1995-10-09 Fujitsu Kk
JPH0964029A (ja) * 1995-08-18 1997-03-07 Canon Sales Co Inc 成膜方法
JPH09237785A (ja) * 1995-12-28 1997-09-09 Toshiba Corp 半導体装置およびその製造方法
JP2000106357A (ja) * 1998-09-29 2000-04-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び絶縁膜の形成方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3223040A (en) 1962-04-09 1965-12-14 Stewart Warner Corp Two component pumping and proportioning system
US4096315A (en) 1976-12-15 1978-06-20 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process for producing a well-adhered durable optical coating on an optical plastic substrate
DE2900200A1 (de) 1979-01-04 1980-07-17 Bosch Gmbh Robert Messonde mit schutzschicht und verfahren zur herstellung einer schutzschicht auf einer messonde
US4793524A (en) 1981-04-30 1988-12-27 American Monitor Corporation Integrated reagent container and metered dispenser means
JPS5884826A (ja) 1981-11-16 1983-05-21 Agency Of Ind Science & Technol 帯電防止性合成樹脂成形品の製造方法
IT1213158B (it) 1984-04-20 1989-12-14 Ates Componenti Elettron Circuito di controllo dell'accensione per amplificatore audio.
US4822632A (en) 1985-05-16 1989-04-18 Becton, Dickinson And Company Ionizing plasma lubricant method
KR870000750A (ko) 1985-06-14 1987-02-20 이마드 마하윌리 이산화실리콘 필름을 화학적으로 증기피복하는 방법
DE3624467A1 (de) 1986-07-19 1988-01-28 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen transparenter schutzschichten aus siliziumverbindungen
JP2632879B2 (ja) 1987-11-17 1997-07-23 東京応化工業株式会社 シリコーン系被膜の形成方法
US4885001A (en) 1988-06-03 1989-12-05 Cobe Laboratories, Inc. Pump with plural flow lines
US5270267A (en) * 1989-05-31 1993-12-14 Mitel Corporation Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
US5098741A (en) 1990-06-08 1992-03-24 Lam Research Corporation Method and system for delivering liquid reagents to processing vessels
JP2876545B2 (ja) 1990-10-24 1999-03-31 キヤノン株式会社 光受容部材
US5095938A (en) 1990-12-21 1992-03-17 Millipore Corporation Injector for fluid delivery system
DE69130947T2 (de) * 1991-01-08 1999-07-08 Fujitsu Ltd., Kawasaki, Kanagawa Verfahren zur bildung eines siliciumoxid-filmes
US5195655A (en) 1991-05-24 1993-03-23 Motorola, Inc. Integrated fluid dispense apparatus to reduce contamination
US5371828A (en) 1991-08-28 1994-12-06 Mks Instruments, Inc. System for delivering and vaporizing liquid at a continuous and constant volumetric rate and pressure
DE4202561A1 (de) 1992-01-30 1993-08-05 Boehringer Mannheim Gmbh Vorrichtung zum dosierten zufuehren einer analysefluessigkeit
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
US5534069A (en) 1992-07-23 1996-07-09 Canon Kabushiki Kaisha Method of treating active material
US5641559A (en) 1992-10-23 1997-06-24 Toyo Seikan Kaisha, Ltd. Gas-tight laminated plastic film containing polymer of organosilicic compound
JP2684942B2 (ja) 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
GB2280169B (en) 1993-07-13 1996-10-16 Bayer Ag Device for transferring and metering a flowable agricultural chemical from a reusable container into a tank
US5433786A (en) 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
US5504042A (en) * 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
JP3281209B2 (ja) 1995-01-30 2002-05-13 株式会社東芝 半導体装置の製造方法
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
AUPN182995A0 (en) 1995-03-20 1995-04-13 Allstate Technology Pty Ltd Dispenser
FR2734402B1 (fr) 1995-05-15 1997-07-18 Brouquet Pierre Procede pour l'isolement electrique en micro-electronique, applicable aux cavites etroites, par depot d'oxyde a l'etat visqueux et dispositif correspondant
JP3601153B2 (ja) 1995-12-27 2004-12-15 東京エレクトロン株式会社 処理ガス供給装置のクリーニング方法
WO1998008249A1 (en) 1996-08-24 1998-02-26 Trikon Equipments Limited Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate
US5989998A (en) 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
US5876503A (en) 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
JP3183845B2 (ja) * 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
US6179277B1 (en) 1998-02-27 2001-01-30 Applied Materials, Inc. Liquid vaporizer systems and methods for their use
US6962727B2 (en) * 1998-03-20 2005-11-08 Honeywell International Inc. Organosiloxanes
US6713234B2 (en) * 1999-02-18 2004-03-30 Micron Technology, Inc. Fabrication of semiconductor devices using anti-reflective coatings
WO2000051174A1 (en) 1999-02-26 2000-08-31 Trikon Holdings Limited A method of processing a polymer layer
JP2003503849A (ja) 1999-06-26 2003-01-28 トリコン ホールディングス リミティド 基材上にフィルムを形成する方法及び装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793296B1 (https=) * 1991-01-08 1995-10-09 Fujitsu Kk
JPH07118007A (ja) * 1993-08-31 1995-05-09 Fujitsu Ltd 半導体装置の製造方法
JPH0964029A (ja) * 1995-08-18 1997-03-07 Canon Sales Co Inc 成膜方法
JPH09237785A (ja) * 1995-12-28 1997-09-09 Toshiba Corp 半導体装置およびその製造方法
JP2000106357A (ja) * 1998-09-29 2000-04-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び絶縁膜の形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100989107B1 (ko) * 2003-03-31 2010-10-25 인터내셔널 비지니스 머신즈 코포레이션 다층 포토레지스트 건식 현상을 위한 방법 및 장치
US8048325B2 (en) 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
WO2020066669A1 (ja) * 2018-09-27 2020-04-02 Jsr株式会社 半導体基板の処理方法

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US6653247B2 (en) 2003-11-25
DE10083897T1 (de) 2002-06-27
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