JP2002538604A5 - - Google Patents

Download PDF

Info

Publication number
JP2002538604A5
JP2002538604A5 JP2000601683A JP2000601683A JP2002538604A5 JP 2002538604 A5 JP2002538604 A5 JP 2002538604A5 JP 2000601683 A JP2000601683 A JP 2000601683A JP 2000601683 A JP2000601683 A JP 2000601683A JP 2002538604 A5 JP2002538604 A5 JP 2002538604A5
Authority
JP
Japan
Prior art keywords
layer
plasma
power supply
heating step
minutes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000601683A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002538604A (ja
Filing date
Publication date
Priority claimed from GBGB9904427.3A external-priority patent/GB9904427D0/en
Priority claimed from GBGB9922801.7A external-priority patent/GB9922801D0/en
Priority claimed from GB0000780A external-priority patent/GB0000780D0/en
Application filed filed Critical
Priority claimed from PCT/GB2000/000671 external-priority patent/WO2000051174A1/en
Publication of JP2002538604A publication Critical patent/JP2002538604A/ja
Publication of JP2002538604A5 publication Critical patent/JP2002538604A5/ja
Pending legal-status Critical Current

Links

JP2000601683A 1999-02-26 2000-02-24 ポリマー層の処理方法 Pending JP2002538604A (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
GBGB9904427.3A GB9904427D0 (en) 1999-02-26 1999-02-26 Method treating an insulating layer
GB9904427.3 1999-02-26
GB9922801.7 1999-09-28
GBGB9922801.7A GB9922801D0 (en) 1999-09-28 1999-09-28 A method of processing a polymer layer
GB0000780A GB0000780D0 (en) 2000-01-14 2000-01-14 A method of processing a polymer layer
GB0000780.7 2000-01-14
PCT/GB2000/000671 WO2000051174A1 (en) 1999-02-26 2000-02-24 A method of processing a polymer layer

Publications (2)

Publication Number Publication Date
JP2002538604A JP2002538604A (ja) 2002-11-12
JP2002538604A5 true JP2002538604A5 (https=) 2007-04-05

Family

ID=27255468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000601683A Pending JP2002538604A (ja) 1999-02-26 2000-02-24 ポリマー層の処理方法

Country Status (6)

Country Link
US (2) US6653247B2 (https=)
JP (1) JP2002538604A (https=)
AU (1) AU2814000A (https=)
DE (1) DE10083897T1 (https=)
GB (1) GB2361809B (https=)
WO (1) WO2000051174A1 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) * 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
WO2000051174A1 (en) 1999-02-26 2000-08-31 Trikon Holdings Limited A method of processing a polymer layer
JP2003503849A (ja) 1999-06-26 2003-01-28 トリコン ホールディングス リミティド 基材上にフィルムを形成する方法及び装置
US7067414B1 (en) * 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US6794311B2 (en) * 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
FI118244B (fi) 2001-06-27 2007-08-31 Nokia Corp Otsikkokenttien kompressiotunnisteen välittäminen datapakettiyhteydellä
GB0117600D0 (en) * 2001-07-19 2001-09-12 Trikon Holdings Ltd Semiconductor structure
DE10146146B4 (de) 2001-09-19 2004-02-05 Infineon Technologies Ag Verfahren zur elektrischen Isolation nebeneinander liegender metallischer Leiterbahnen und Halbleiterbauelement mit voneinander isolierten metallischen Leiterbahnen
US7247252B2 (en) * 2002-06-20 2007-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of avoiding plasma arcing during RIE etching
US6642139B1 (en) * 2002-06-28 2003-11-04 Macronix International Co., Ltd. Method for forming interconnection structure in an integration circuit
KR100989107B1 (ko) * 2003-03-31 2010-10-25 인터내셔널 비지니스 머신즈 코포레이션 다층 포토레지스트 건식 현상을 위한 방법 및 장치
US8048325B2 (en) 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
CN100341121C (zh) * 2003-09-10 2007-10-03 台湾积体电路制造股份有限公司 介电层的改质方法与其在镶嵌式金属制程的应用
KR100854809B1 (ko) * 2003-11-11 2008-08-27 도쿄엘렉트론가부시키가이샤 기판 처리 방법과, 프로그램을 기록한 기억 매체
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
TW200631095A (en) * 2005-01-27 2006-09-01 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
US7202564B2 (en) * 2005-02-16 2007-04-10 International Business Machines Corporation Advanced low dielectric constant organosilicon plasma chemical vapor deposition films
JP4837370B2 (ja) 2005-12-05 2011-12-14 東京エレクトロン株式会社 成膜方法
WO2007080944A1 (ja) * 2006-01-13 2007-07-19 Tokyo Electron Limited 多孔質膜の成膜方法およびコンピュータ可読記録媒体
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US8278224B1 (en) 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
TWI579916B (zh) 2009-12-09 2017-04-21 諾菲勒斯系統公司 整合可流動氧化物及頂蓋氧化物之新穎間隙填充
US8685867B1 (en) 2010-12-09 2014-04-01 Novellus Systems, Inc. Premetal dielectric integration process
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
WO2020066669A1 (ja) * 2018-09-27 2020-04-02 Jsr株式会社 半導体基板の処理方法
KR102698381B1 (ko) * 2018-11-23 2024-08-23 솔브레인 주식회사 연마용 조성물 및 이를 이용하는 연마 방법
CN113728415B (zh) 2019-04-19 2025-05-16 朗姆研究公司 原子层沉积期间的快速冲洗清扫

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3223040A (en) 1962-04-09 1965-12-14 Stewart Warner Corp Two component pumping and proportioning system
US4096315A (en) 1976-12-15 1978-06-20 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Process for producing a well-adhered durable optical coating on an optical plastic substrate
DE2900200A1 (de) 1979-01-04 1980-07-17 Bosch Gmbh Robert Messonde mit schutzschicht und verfahren zur herstellung einer schutzschicht auf einer messonde
US4793524A (en) 1981-04-30 1988-12-27 American Monitor Corporation Integrated reagent container and metered dispenser means
JPS5884826A (ja) 1981-11-16 1983-05-21 Agency Of Ind Science & Technol 帯電防止性合成樹脂成形品の製造方法
IT1213158B (it) 1984-04-20 1989-12-14 Ates Componenti Elettron Circuito di controllo dell'accensione per amplificatore audio.
US4822632A (en) 1985-05-16 1989-04-18 Becton, Dickinson And Company Ionizing plasma lubricant method
KR870000750A (ko) 1985-06-14 1987-02-20 이마드 마하윌리 이산화실리콘 필름을 화학적으로 증기피복하는 방법
DE3624467A1 (de) 1986-07-19 1988-01-28 Leybold Heraeus Gmbh & Co Kg Verfahren zum herstellen transparenter schutzschichten aus siliziumverbindungen
JP2632879B2 (ja) 1987-11-17 1997-07-23 東京応化工業株式会社 シリコーン系被膜の形成方法
US4885001A (en) 1988-06-03 1989-12-05 Cobe Laboratories, Inc. Pump with plural flow lines
US5270267A (en) * 1989-05-31 1993-12-14 Mitel Corporation Curing and passivation of spin on glasses by a plasma process wherein an external polarization field is applied to the substrate
US5098741A (en) 1990-06-08 1992-03-24 Lam Research Corporation Method and system for delivering liquid reagents to processing vessels
JP2876545B2 (ja) 1990-10-24 1999-03-31 キヤノン株式会社 光受容部材
US5095938A (en) 1990-12-21 1992-03-17 Millipore Corporation Injector for fluid delivery system
JPH0793296B1 (https=) * 1991-01-08 1995-10-09 Fujitsu Kk
DE69130947T2 (de) * 1991-01-08 1999-07-08 Fujitsu Ltd., Kawasaki, Kanagawa Verfahren zur bildung eines siliciumoxid-filmes
US5195655A (en) 1991-05-24 1993-03-23 Motorola, Inc. Integrated fluid dispense apparatus to reduce contamination
US5371828A (en) 1991-08-28 1994-12-06 Mks Instruments, Inc. System for delivering and vaporizing liquid at a continuous and constant volumetric rate and pressure
DE4202561A1 (de) 1992-01-30 1993-08-05 Boehringer Mannheim Gmbh Vorrichtung zum dosierten zufuehren einer analysefluessigkeit
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
US5534069A (en) 1992-07-23 1996-07-09 Canon Kabushiki Kaisha Method of treating active material
US5641559A (en) 1992-10-23 1997-06-24 Toyo Seikan Kaisha, Ltd. Gas-tight laminated plastic film containing polymer of organosilicic compound
JP2684942B2 (ja) 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
GB2280169B (en) 1993-07-13 1996-10-16 Bayer Ag Device for transferring and metering a flowable agricultural chemical from a reusable container into a tank
US5433786A (en) 1993-08-27 1995-07-18 The Dow Chemical Company Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein
JP3418458B2 (ja) * 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
US5504042A (en) * 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
JP3281209B2 (ja) 1995-01-30 2002-05-13 株式会社東芝 半導体装置の製造方法
US5620524A (en) 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
AUPN182995A0 (en) 1995-03-20 1995-04-13 Allstate Technology Pty Ltd Dispenser
FR2734402B1 (fr) 1995-05-15 1997-07-18 Brouquet Pierre Procede pour l'isolement electrique en micro-electronique, applicable aux cavites etroites, par depot d'oxyde a l'etat visqueux et dispositif correspondant
JP3061255B2 (ja) * 1995-08-18 2000-07-10 キヤノン販売株式会社 成膜方法
JP3601153B2 (ja) 1995-12-27 2004-12-15 東京エレクトロン株式会社 処理ガス供給装置のクリーニング方法
JPH09237785A (ja) * 1995-12-28 1997-09-09 Toshiba Corp 半導体装置およびその製造方法
WO1998008249A1 (en) 1996-08-24 1998-02-26 Trikon Equipments Limited Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate
US5989998A (en) 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
US5876503A (en) 1996-11-27 1999-03-02 Advanced Technology Materials, Inc. Multiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositions
JP3183845B2 (ja) * 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
US6179277B1 (en) 1998-02-27 2001-01-30 Applied Materials, Inc. Liquid vaporizer systems and methods for their use
US6962727B2 (en) * 1998-03-20 2005-11-08 Honeywell International Inc. Organosiloxanes
JP4119542B2 (ja) * 1998-09-29 2008-07-16 松下電器産業株式会社 半導体装置の製造方法及び絶縁膜の形成方法
US6713234B2 (en) * 1999-02-18 2004-03-30 Micron Technology, Inc. Fabrication of semiconductor devices using anti-reflective coatings
WO2000051174A1 (en) 1999-02-26 2000-08-31 Trikon Holdings Limited A method of processing a polymer layer
JP2003503849A (ja) 1999-06-26 2003-01-28 トリコン ホールディングス リミティド 基材上にフィルムを形成する方法及び装置

Similar Documents

Publication Publication Date Title
JP2002538604A5 (https=)
TW452866B (en) Manufacturing method of thin film on a substrate
JP2006080314A (ja) 結合基板の製造方法
JP2003502845A5 (https=)
TWI364631B (en) Methods of removing photoresist from substrates
CN108511332B (zh) 半导体基材直接结合的方法
TW200629416A (en) Semiconductor device and fabrication method thereof
KR20060090305A (ko) 플라즈마 처리 방법
TWI323487B (en) Plasma etching method
JP2010034415A (ja) プラズマ処理方法
JP4523094B2 (ja) プラズマ処理方法
TW200515473A (en) System for rinsing and drying semiconductor substrates and method therefor
JPH10326771A (ja) 水素プラズマダウンストリーム処理装置及び水素プラズマダウンストリーム処理方法
TW201011805A (en) Chamber plasma-cleaning process scheme
JP2000357683A5 (https=)
WO2010021020A1 (ja) レジスト除去方法及びレジスト除去装置
JP2011152679A (ja) 木質ボードの製造方法及び木質ボード
JP2001332532A (ja) レジストアッシング装置及び方法
JP2003077855A (ja) 熱処理装置、熱処理方法
JP2007038502A (ja) タイヤ加硫成形用金型の洗浄方法及びその装置
JPH0729898A (ja) 半導体製造方法
KR101049939B1 (ko) 기판 제조 방법
JP2001156049A (ja) 有機物剥離装置及び有機物剥離方法
JP2011192764A (ja) 膜の除去方法及び膜除去用装置
TW200618105A (en) Plasma chamber system and method of ashing photoresist pattern formed on substrate having low-k dielectric layer using the same