JP2003502845A5 - - Google Patents

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Publication number
JP2003502845A5
JP2003502845A5 JP2001503713A JP2001503713A JP2003502845A5 JP 2003502845 A5 JP2003502845 A5 JP 2003502845A5 JP 2001503713 A JP2001503713 A JP 2001503713A JP 2001503713 A JP2001503713 A JP 2001503713A JP 2003502845 A5 JP2003502845 A5 JP 2003502845A5
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JP
Japan
Prior art keywords
dielectric layer
electron beam
vapor deposition
chemical vapor
beam irradiation
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Pending
Application number
JP2001503713A
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English (en)
Japanese (ja)
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JP2003502845A (ja
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Priority claimed from US09/330,709 external-priority patent/US6204201B1/en
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Publication of JP2003502845A publication Critical patent/JP2003502845A/ja
Publication of JP2003502845A5 publication Critical patent/JP2003502845A5/ja
Pending legal-status Critical Current

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JP2001503713A 1999-06-11 2000-06-09 化学気相成長前に電子線処理を用いて薄膜を処理する方法 Pending JP2003502845A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/330,709 1999-06-11
US09/330,709 US6204201B1 (en) 1999-06-11 1999-06-11 Method of processing films prior to chemical vapor deposition using electron beam processing
PCT/US2000/015928 WO2000077275A1 (en) 1999-06-11 2000-06-09 Method of processing films prior to chemical vapor deposition using electron beam processing

Publications (2)

Publication Number Publication Date
JP2003502845A JP2003502845A (ja) 2003-01-21
JP2003502845A5 true JP2003502845A5 (https=) 2007-07-26

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JP2001503713A Pending JP2003502845A (ja) 1999-06-11 2000-06-09 化学気相成長前に電子線処理を用いて薄膜を処理する方法

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Country Link
US (2) US6204201B1 (https=)
JP (1) JP2003502845A (https=)
AU (1) AU5331700A (https=)
WO (1) WO2000077275A1 (https=)

Families Citing this family (117)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660656B2 (en) * 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6303523B2 (en) * 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6669385B1 (en) * 1999-05-25 2003-12-30 Silverbrook Research Pty Ltd Printer having a document transfer device
US6204201B1 (en) * 1999-06-11 2001-03-20 Electron Vision Corporation Method of processing films prior to chemical vapor deposition using electron beam processing
US6589889B2 (en) * 1999-09-09 2003-07-08 Alliedsignal Inc. Contact planarization using nanoporous silica materials
US20030157340A1 (en) * 2000-02-01 2003-08-21 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US20030104225A1 (en) * 2000-02-01 2003-06-05 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US6902771B2 (en) 2000-02-01 2005-06-07 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US6582777B1 (en) * 2000-02-17 2003-06-24 Applied Materials Inc. Electron beam modification of CVD deposited low dielectric constant materials
US7026053B2 (en) * 2001-01-29 2006-04-11 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US6647995B1 (en) * 2001-06-27 2003-11-18 Advanced Micro Devices, Inc. Method and system for eliminating post etch residues
US6605549B2 (en) 2001-09-29 2003-08-12 Intel Corporation Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectrics
US6890850B2 (en) * 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US7091137B2 (en) * 2001-12-14 2006-08-15 Applied Materials Bi-layer approach for a hermetic low dielectric constant layer for barrier applications
US6838393B2 (en) * 2001-12-14 2005-01-04 Applied Materials, Inc. Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US6815373B2 (en) * 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US8951342B2 (en) 2002-04-17 2015-02-10 Air Products And Chemicals, Inc. Methods for using porogens for low k porous organosilica glass films
US20080268177A1 (en) 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
US7384471B2 (en) 2002-04-17 2008-06-10 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US9061317B2 (en) 2002-04-17 2015-06-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US7056560B2 (en) * 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US20040266123A1 (en) * 2002-05-08 2004-12-30 Applied Materials, Inc. Electron beam treatment of SixNy films
US6936551B2 (en) * 2002-05-08 2005-08-30 Applied Materials Inc. Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US20040101632A1 (en) * 2002-11-22 2004-05-27 Applied Materials, Inc. Method for curing low dielectric constant film by electron beam
US7060330B2 (en) * 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US20040033371A1 (en) * 2002-05-16 2004-02-19 Hacker Nigel P. Deposition of organosilsesquioxane films
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
US7404990B2 (en) 2002-11-14 2008-07-29 Air Products And Chemicals, Inc. Non-thermal process for forming porous low dielectric constant films
JP4156913B2 (ja) * 2002-12-04 2008-09-24 東京エレクトロン株式会社 被処理体の処理方法
US6790788B2 (en) * 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
US6897163B2 (en) * 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
TWI240959B (en) 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US20050260420A1 (en) * 2003-04-01 2005-11-24 Collins Martha J Low dielectric materials and methods for making same
US8137764B2 (en) * 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films
US20040253378A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
US20050037153A1 (en) * 2003-08-14 2005-02-17 Applied Materials, Inc. Stress reduction of sioc low k films
US20050062164A1 (en) * 2003-09-23 2005-03-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving time dependent dielectric breakdown lifetimes
US7030041B2 (en) * 2004-03-15 2006-04-18 Applied Materials Inc. Adhesion improvement for low k dielectrics
US20050214457A1 (en) * 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20050224722A1 (en) * 2004-03-30 2005-10-13 Applied Materials, Inc. Method and apparatus for reducing charge density on a dielectric coated substrate after exposure to large area electron beam
US7547643B2 (en) 2004-03-31 2009-06-16 Applied Materials, Inc. Techniques promoting adhesion of porous low K film to underlying barrier layer
US7611996B2 (en) * 2004-03-31 2009-11-03 Applied Materials, Inc. Multi-stage curing of low K nano-porous films
US20050227502A1 (en) * 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US20050233555A1 (en) * 2004-04-19 2005-10-20 Nagarajan Rajagopalan Adhesion improvement for low k dielectrics to conductive materials
US7229911B2 (en) * 2004-04-19 2007-06-12 Applied Materials, Inc. Adhesion improvement for low k dielectrics to conductive materials
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
JP5110239B2 (ja) 2004-05-11 2012-12-26 Jsr株式会社 有機シリカ系膜の形成方法、膜形成用組成物
KR101140535B1 (ko) * 2004-05-11 2012-05-02 제이에스알 가부시끼가이샤 유기 실리카계 막의 형성 방법, 유기 실리카계 막, 배선구조체, 반도체 장치 및 막 형성용 조성물
US7229041B2 (en) * 2004-06-30 2007-06-12 Ohio Central Steel Company Lifting lid crusher
US7288205B2 (en) * 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
EP1615260A3 (en) * 2004-07-09 2009-09-16 JSR Corporation Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
JP4355939B2 (ja) * 2004-07-23 2009-11-04 Jsr株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法
US7422776B2 (en) * 2004-08-24 2008-09-09 Applied Materials, Inc. Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)
US7332445B2 (en) 2004-09-28 2008-02-19 Air Products And Chemicals, Inc. Porous low dielectric constant compositions and methods for making and using same
US20060105106A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Tensile and compressive stressed materials for semiconductors
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US20060228889A1 (en) * 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7247582B2 (en) * 2005-05-23 2007-07-24 Applied Materials, Inc. Deposition of tensile and compressive stressed materials
US7544603B2 (en) * 2005-09-22 2009-06-09 United Microelectronics Corp. Method of fabricating silicon nitride layer and method of fabricating semiconductor device
US20070134435A1 (en) * 2005-12-13 2007-06-14 Ahn Sang H Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films
EP1981074B1 (en) * 2006-02-02 2011-06-22 JSR Corporation Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7601651B2 (en) * 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US20070287301A1 (en) * 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US8399349B2 (en) 2006-04-18 2013-03-19 Air Products And Chemicals, Inc. Materials and methods of forming controlled void
US7825038B2 (en) * 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US7902080B2 (en) * 2006-05-30 2011-03-08 Applied Materials, Inc. Deposition-plasma cure cycle process to enhance film quality of silicon dioxide
US8232176B2 (en) * 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US7297376B1 (en) 2006-07-07 2007-11-20 Applied Materials, Inc. Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers
US7943531B2 (en) * 2007-10-22 2011-05-17 Applied Materials, Inc. Methods for forming a silicon oxide layer over a substrate
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US8357435B2 (en) * 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
US8980382B2 (en) * 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8741788B2 (en) * 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US7935643B2 (en) * 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US7989365B2 (en) * 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
US20110136347A1 (en) * 2009-10-21 2011-06-09 Applied Materials, Inc. Point-of-use silylamine generation
US8449942B2 (en) * 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
CN102687252A (zh) 2009-12-30 2012-09-19 应用材料公司 以可变的氮/氢比所制造的自由基来生长介电薄膜的方法
US8329262B2 (en) * 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
JP2013517616A (ja) 2010-01-06 2013-05-16 アプライド マテリアルズ インコーポレイテッド 酸化物ライナを使用する流動可能な誘電体
SG182333A1 (en) 2010-01-07 2012-08-30 Applied Materials Inc In-situ ozone cure for radical-component cvd
CN102844848A (zh) * 2010-03-05 2012-12-26 应用材料公司 通过自由基成分化学气相沉积的共形层
US8236708B2 (en) 2010-03-09 2012-08-07 Applied Materials, Inc. Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) as silicon precursor
US8563095B2 (en) * 2010-03-15 2013-10-22 Applied Materials, Inc. Silicon nitride passivation layer for covering high aspect ratio features
US7994019B1 (en) 2010-04-01 2011-08-09 Applied Materials, Inc. Silicon-ozone CVD with reduced pattern loading using incubation period deposition
US8476142B2 (en) 2010-04-12 2013-07-02 Applied Materials, Inc. Preferential dielectric gapfill
US8524004B2 (en) 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
KR101599953B1 (ko) 2013-08-08 2016-03-04 제일모직 주식회사 실리카계 절연층 형성용 조성물, 실리카계 절연층 및 실리카계 절연층의 제조방법
US9922818B2 (en) 2014-06-16 2018-03-20 Versum Materials Us, Llc Alkyl-alkoxysilacyclic compounds
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
JP2017014618A (ja) * 2016-06-01 2017-01-19 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated フレキシブル基板を処理する方法
JP6786307B2 (ja) * 2016-08-29 2020-11-18 株式会社ニューフレアテクノロジー 気相成長方法
US10249489B2 (en) 2016-11-02 2019-04-02 Versum Materials Us, Llc Use of silyl bridged alkyl compounds for dense OSG films
US11851763B2 (en) 2017-06-23 2023-12-26 General Electric Company Chemical vapor deposition during additive manufacturing
US10821519B2 (en) 2017-06-23 2020-11-03 General Electric Company Laser shock peening within an additive manufacturing process
US10821718B2 (en) 2017-06-23 2020-11-03 General Electric Company Selective powder processing during powder bed additive manufacturing
WO2019046449A1 (en) 2017-08-30 2019-03-07 Versum Materials Us, Llc ALCOXYSILACYCLIC OR ACYLOXYSILACYCLIC COMPOUNDS AND METHODS OF DEPOSITING FILMS USING THE SAME
US20190134663A1 (en) 2017-10-27 2019-05-09 Versum Materials Us, Llc Silacyclic Compounds and Methods for Depositing Silicon-Containing Films Using Same
US11749563B2 (en) 2018-06-27 2023-09-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interlayer dielectric layer
CN110952074B (zh) 2018-08-10 2023-06-13 弗萨姆材料美国有限责任公司 硅化合物和使用硅化合物沉积膜的方法
TWI894160B (zh) 2019-08-16 2025-08-21 美商慧盛材料美國責任有限公司 一種用於製造介電膜之化學氣相沉積方法
US11420259B2 (en) 2019-11-06 2022-08-23 General Electric Company Mated components and method and system therefore

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222792A (en) 1979-09-10 1980-09-16 International Business Machines Corporation Planar deep oxide isolation process utilizing resin glass and E-beam exposure
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
JPS63164391A (ja) 1986-12-26 1988-07-07 昭和電工株式会社 プリント配線板
JPH05238880A (ja) * 1992-02-28 1993-09-17 Fujitsu Ltd エピタキシャル成長方法
US5468595A (en) 1993-01-29 1995-11-21 Electron Vision Corporation Method for three-dimensional control of solubility properties of resist layers
US5376586A (en) * 1993-05-19 1994-12-27 Fujitsu Limited Method of curing thin films of organic dielectric material
JP3272531B2 (ja) * 1994-03-15 2002-04-08 富士通株式会社 化合物半導体装置の製造方法
JPH07273039A (ja) * 1994-03-29 1995-10-20 Hitachi Ltd 成膜装置における塵埃のクリーニング方法および機構
MY113904A (en) * 1995-05-08 2002-06-29 Electron Vision Corp Method for curing spin-on-glass film utilizing electron beam radiation
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US5952243A (en) 1995-06-26 1999-09-14 Alliedsignal Inc. Removal rate behavior of spin-on dielectrics with chemical mechanical polish
KR100238252B1 (ko) * 1996-09-13 2000-01-15 윤종용 Sog층 큐어링방법 및 이를 이용한 반도체장치의 절연막제조방법
US5801094A (en) 1997-02-28 1998-09-01 United Microelectronics Corporation Dual damascene process
US6080526A (en) * 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
KR19990030660A (ko) * 1997-10-02 1999-05-06 윤종용 전자빔을 이용한 반도체장치의 층간 절연막 형성방법
US6207555B1 (en) * 1999-03-17 2001-03-27 Electron Vision Corporation Electron beam process during dual damascene processing
US6204201B1 (en) * 1999-06-11 2001-03-20 Electron Vision Corporation Method of processing films prior to chemical vapor deposition using electron beam processing

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