JP2004235637A - エッチストップ層の2段階形成方法 - Google Patents
エッチストップ層の2段階形成方法 Download PDFInfo
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- JP2004235637A JP2004235637A JP2004018431A JP2004018431A JP2004235637A JP 2004235637 A JP2004235637 A JP 2004235637A JP 2004018431 A JP2004018431 A JP 2004018431A JP 2004018431 A JP2004018431 A JP 2004018431A JP 2004235637 A JP2004235637 A JP 2004235637A
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- film
- carbon
- silicon carbide
- layer
- gas
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- 238000000034 method Methods 0.000 title claims abstract description 133
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 79
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 69
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000007789 gas Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 60
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 55
- 238000006243 chemical reaction Methods 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 239000012495 reaction gas Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000011261 inert gas Substances 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000001590 oxidative effect Effects 0.000 claims abstract description 7
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 157
- 238000000151 deposition Methods 0.000 claims description 55
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 129
- 238000009812 interlayer coupling reaction Methods 0.000 description 18
- 230000009977 dual effect Effects 0.000 description 16
- 239000004020 conductor Substances 0.000 description 10
- 230000008901 benefit Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N Propionic acid Chemical compound CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AZLYZRGJCVQKKK-UHFFFAOYSA-N dioxohydrazine Chemical compound O=NN=O AZLYZRGJCVQKKK-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract
【解決手段】Cu層が形成されるべき半導体基板上にCu層と接触する膜を形成するための方法は、(i)シリコン、炭素及び水素を含む蒸着ガス及び不活性ガスから成る第1反応ガスを基板が載置されるところの反応空間内に導入する工程と、(ii)第1反応ガスをプラズマへ励起することにより基板上にシリコンカーバイド膜を蒸着する工程と、(iii)シリコン、炭素及び水素を含む蒸着ガス、酸化ガス及び不活性ガスから成る第2反応ガスを反応空間内に導入する工程と、(iv)第2反応ガスをプラズマへ励起することによりシリコンカーバイド膜の頂面に炭素含有シリコン酸化膜を蒸着する工程を含む。
【選択図】図2
Description
具体例
具体例
図1に示される装置を使って、以下の実施例及び比較例が実行された。
膜形成条件は以下の通りである。
蒸着温度:380℃
TMS流量:300sccm
He流量:2500sccm
反応チャンバ圧力:533Pa
高周波電力 27.12MHz:450W
400kHz:100W
第1工程は実行されなかった。第2工程は図5に示されるシーケンスに従って実行された。
CO2流量:1900sccm
第1工程及び第2工程の膜形成は図2に示されるシーケンスに従い、以下に示す条件で実行された。
第1工程
蒸着温度:380℃
TMS流量:300sccm
He流量:2500sccm
反応チャンバ圧力:533Pa
高周波電力 27.12MHz:450W
400kHz:100W
第2工程(TMS流量及びHe流量は第1工程と同じ値)
CO2流量:1900sccm
第1工程及び第2工程の膜形成は図3に示されるシーケンスに従い、以下に示す条件で実行された。
第1工程
蒸着温度:380℃
TMS流量:300sccm
He流量:2500sccm
反応チャンバ圧力:533Pa
高周波電力 27.12MHz:450W
400kHz:100W
第2工程(TMS流量及びHe流量は第1工程と同じ値)
CO2流量:1900sccm
生成された膜特性が以下の表に示されている。
本発明に従う炭素含有シリコン酸化膜の比誘電率は4.0から4.5の限度内にあり、リーク電流値@2MV/cmは約5〜6×10−8A/cm2であった。比較のために、シリコンカーバイド膜が第1工程を省略して形成され、当該膜の特性が測定された。比誘電率4.4及びリーク電流値@2MV/cmは5.7×10−8A/cm2を有するほぼ等しい膜が得られた。
32 第2工程
33 プラズマ放電
34 ガス導入
35 TMS導入
36 パージ
41 TMS流量
42 He流量
43 反応チャンバ圧力
44 CO2流量
45 プラズマ放電
46 CO2安定化
Claims (24)
- Cu層が形成されるべき半導体基板上にCu層と接触する膜を形成するための方法であって、
シリコン、炭素及び酸素を含む蒸着ガス及び不活性ガスから成る第1反応ガスを基板が載置される反応空間内へ導入する工程と、
第1反応ガスをプラズマへ励起することにより基板上にシリコンカーバイド膜を蒸着する工程と、
シリコン、炭素及び水素を含む蒸着ガス、酸化ガス及び不活性ガスから成る第2反応ガスを反応空間内へ導入する工程と、
第2反応ガスをプラズマへ励起することによりシリコンカーバイド膜の頂面に炭素含有シリコン酸化膜を蒸着する工程と、
から成る方法。 - 請求項1に記載の方法であって、シリコンカーバイド膜は酸素を含まない、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜はCu配線が形成されるべきところでCu配線と接触して形成される、ところの方法。
- 請求項1に記載の方法であって、第1及び第2反応ガスの励起は高周波(RF)電力を反応ガスに印加することにより実行される、ところの方法。
- 請求項4に記載の方法であって、シリコンカーバイド膜を蒸着する工程及び炭素含有シリコン酸化膜を蒸着する工程はRF電力供給を中断することなく連続的に実行される、ところの方法。
- 請求項4に記載の方法であって、RF電力供給はシリコンカーバイド膜を蒸着する工程と炭素含有シリコン酸化膜を蒸着する工程との間で中断される、ところの方法。
- 請求項6に記載の方法であって、RF電力供給は第2反応ガスを導入し圧力を安定化した後に再開される、ところの方法。
- 請求項1に記載の方法であって、蒸着ガスはテトラメチルシランまたはトリメチルシランである、ところの方法。
- 請求項1に記載の方法であって、不活性ガスは、アルゴン、ヘリウム、ネオン、キセノンまたはクリプトンである、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜は、シリコン、炭素、窒素及び水素から成る、ところの方法。
- 請求項1に記載の方法であって、炭素含有シリコン酸化膜は、シリコン、炭素、酸素及び水素から成る、ところの方法。
- 請求項1に記載の方法であって、炭素含有シリコン酸化膜は、300℃から400℃の基板温度で形成される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜は300℃から400℃の基板温度で形成される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜の厚さが3nmから10nmに達したとき、シリコンカーバイド膜の蒸着が停止される、ところの方法。
- 請求項1に記載の方法であって、炭素含有シリコン酸化膜の厚さが30nmから70nmに達したとき、炭素含有シリコン酸化膜の蒸着が停止される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜を蒸着する工程及び炭素含有シリコン酸化膜を蒸着する工程は、低比誘電率層が基板上に形成されるところの反応チャンバ内で実行される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜を蒸着する工程及び炭素含有シリコン酸化膜を蒸着する工程は、低比誘電率層が基板上に形成されるところの反応チャンバに近接した反応チャンバ内で実行される、ところの方法。
- 請求項1に記載の方法であって、膜はエッチストップ層である、ところの方法。
- 請求項1に記載の方法であって、膜はハードマスクである、ところの方法。
- Cu層と接触する膜を含む層間構造を半導体基板上に製造するための方法であって、
(i)複数の層を半導体基板上に形成する工程と、
(ii)エッチングにより複数の層を層間結合するための孔を形成する工程と、
(iii)孔の中にCuを蒸着する工程と、
(iv)複数の層の頂面から余分のCuを除去する工程と、
(v)プラズマ反応により複数の層の頂面にシリコンカーバイド膜を蒸着する工程であって、Cuが当該シリコンカーバイド膜によって覆われるところの工程と、
(vi)プラズマ反応によりシリコンカーバイド膜の頂面に炭素含有シリコン酸化膜を蒸着する工程と、
から成る方法。 - 請求項20に記載の方法であって、複数の層は、基板上に連続して形成された下部エッチストップ層、低比誘電率層及び上部エッチストップ層から成り、工程(ii)において上部エッチストップ層の頂面にレジストを形成し該レジストを使って複数の層をエッチングすることでビアホールを形成することにより孔が生成され、工程(iv)においてレジスト及び上部エッチストップ層は余分のCuを除去する際に除去される、ところの方法。
- 請求項20に記載の方法であって、複数の層は、基板上に連続して形成された下部エッチストップ層、下部低比誘電率層、中間エッチストップ層、上部低比誘電率層及び上部エッチストップ層から成り、工程(ii)において上部エッチストップ層の頂面にレジストを形成し該レジストを使って複数の層をエッチングすることでビアホール及びトレンチを形成することにより孔が生成され、工程(iv)においてレジスト及び上部エッチストップ層は余分のCuを除去する際に除去される、ところの方法。
- 請求項20に記載の方法であって、工程(i)の前に基板上に低比誘電率層が形成され、複数の層が当該低比誘電率層の頂面に形成される、ところの方法。
- 請求項20に記載の方法であって、工程(i)から(iv)は少なくとも1回繰り返される、ところの方法。
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