JP4743470B2 - 半導体基板上にCu層と接触する膜を形成するための方法 - Google Patents
半導体基板上にCu層と接触する膜を形成するための方法 Download PDFInfo
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- JP4743470B2 JP4743470B2 JP2004018431A JP2004018431A JP4743470B2 JP 4743470 B2 JP4743470 B2 JP 4743470B2 JP 2004018431 A JP2004018431 A JP 2004018431A JP 2004018431 A JP2004018431 A JP 2004018431A JP 4743470 B2 JP4743470 B2 JP 4743470B2
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- carbon
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- silicon carbide
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- 239000000758 substrate Substances 0.000 title claims description 56
- 239000004065 semiconductor Substances 0.000 title claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 75
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 75
- 229910052799 carbon Inorganic materials 0.000 claims description 68
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 65
- 239000007789 gas Substances 0.000 claims description 64
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- 238000006243 chemical reaction Methods 0.000 claims description 54
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- 239000001301 oxygen Substances 0.000 claims description 22
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 21
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 claims description 2
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-N Propionic acid Chemical compound CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- AZLYZRGJCVQKKK-UHFFFAOYSA-N dioxohydrazine Chemical compound O=NN=O AZLYZRGJCVQKKK-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- 235000019441 ethanol Nutrition 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
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- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3105—After-treatment
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Description
具体例
具体例
図1に示される装置を使って、以下の実施例及び比較例が実行された。
膜形成条件は以下の通りである。
蒸着温度:380℃
TMS流量:300sccm
He流量:2500sccm
反応チャンバ圧力:533Pa
高周波電力 27.12MHz:450W
400kHz:100W
第1工程は実行されなかった。第2工程は図5に示されるシーケンスに従って実行された。
CO2流量:1900sccm
第1工程及び第2工程の膜形成は図2に示されるシーケンスに従い、以下に示す条件で実行された。
第1工程
蒸着温度:380℃
TMS流量:300sccm
He流量:2500sccm
反応チャンバ圧力:533Pa
高周波電力 27.12MHz:450W
400kHz:100W
第2工程(TMS流量及びHe流量は第1工程と同じ値)
CO2流量:1900sccm
第1工程及び第2工程の膜形成は図3に示されるシーケンスに従い、以下に示す条件で実行された。
第1工程
蒸着温度:380℃
TMS流量:300sccm
He流量:2500sccm
反応チャンバ圧力:533Pa
高周波電力 27.12MHz:450W
400kHz:100W
第2工程(TMS流量及びHe流量は第1工程と同じ値)
CO2流量:1900sccm
生成された膜特性が以下の表に示されている。
酸素を含まないシリコンカーバイド膜が本発明に従う方法を使って形成された炭素含有シリコン酸化膜用の初期膜として形成されるため、配線材料として使用されるCuと酸素の反応によって引き起こされる膜剥離及び伝導破損のような問題が避けられる。
本発明に従う炭素含有シリコン酸化膜の比誘電率は4.0から4.5の限度内にあり、リーク電流値@2MV/cmは約5〜6×10−8A/cm2であった。比較のために、シリコンカーバイド膜が第1工程を省略して形成され、当該膜の特性が測定された。比誘電率4.4及びリーク電流値@2MV/cmは5.7×10−8A/cm2を有するほぼ等しい膜が得られた。
32 第2工程
33 プラズマ放電
34 ガス導入
35 TMS導入
36 パージ
41 TMS流量
42 He流量
43 反応チャンバ圧力
44 CO2流量
45 プラズマ放電
46 CO2安定化
Claims (11)
- Cu層が形成されるべき半導体基板上にCu層と接触する膜を形成するための方法であって、
シリコン、炭素及び水素を含む蒸着ガス及び不活性ガスから成る第1反応ガスを基板が載置される反応空間内へ導入する工程と、
第1反応ガスをプラズマへ励起することにより基板上に酸素を含まないシリコンカーバイド膜を蒸着する工程と、
シリコン、炭素及び水素を含む蒸着ガス、酸化ガス及び不活性ガスから成る第2反応ガスを反応空間内へ導入する工程と、
第2反応ガスをプラズマへ励起することによりシリコンカーバイド膜の頂面に炭素含有シリコン酸化膜を蒸着する工程と、
から成り、
第1及び第2反応ガスの励起が高周波(RF)電力を反応ガスに印加することにより実行され、前記RF電力の供給が、シリコンカーバイド膜を蒸着する工程と炭素含有シリコン酸化膜を蒸着する工程との間で中断された後に、第2反応ガスが導入されて反応空間内の圧力が安定した後に再開され、
前記基板上にシリコンカーバイド膜を蒸着する工程では、前記酸素を含まないシリコンカーバイド膜が、Cu配線が形成されるべきところでCu配線と接触して形成され、
前記炭素含有シリコン酸化膜の頂面に低比誘電率層をさらに蒸着して、前記低比誘電率層、前記炭素含有シリコン酸化膜、及び前記シリコンカーバイド膜をエッチングするときに、前記シリコンカーバイド膜及び前記炭素含有シリコン酸化膜はエッチストップ層である、
ところの方法。 - 請求項1に記載の方法であって、蒸着ガスはテトラメチルシランまたはトリメチルシランである、ところの方法。
- 請求項1に記載の方法であって、不活性ガスは、アルゴン、ヘリウム、ネオン、キセノンまたはクリプトンである、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜は、シリコン、炭素、窒素及び水素から成る、ところの方法。
- 請求項1に記載の方法であって、炭素含有シリコン酸化膜は、シリコン、炭素、酸素及び水素から成る、ところの方法。
- 請求項1に記載の方法であって、炭素含有シリコン酸化膜は、300℃から400℃の基板温度で形成される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜は300℃から400℃の基板温度で形成される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜の厚さが3nmから10nmに達したとき、シリコンカーバイド膜の蒸着が停止される、ところの方法。
- 請求項1に記載の方法であって、炭素含有シリコン酸化膜の厚さが30nmから70nmに達したとき、炭素含有シリコン酸化膜の蒸着が停止される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜を蒸着する工程及び炭素含有シリコン酸化膜を蒸着する工程は、前記低比誘電率層が基板上に形成されるところの反応チャンバ内で実行される、ところの方法。
- 請求項1に記載の方法であって、シリコンカーバイド膜を蒸着する工程及び炭素含有シリコン酸化膜を蒸着する工程は、前記低比誘電率層が基板上に形成されるところの反応チャンバに近接した反応チャンバ内で実行される、ところの方法。
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US7892972B2 (en) * | 2006-02-03 | 2011-02-22 | Micron Technology, Inc. | Methods for fabricating and filling conductive vias and conductive vias so formed |
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US7956465B2 (en) * | 2006-05-08 | 2011-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing resistivity in interconnect structures of integrated circuits |
US8292698B1 (en) * | 2007-03-30 | 2012-10-23 | Lam Research Corporation | On-line chamber cleaning using dry ice blasting |
US8242016B2 (en) | 2007-05-14 | 2012-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Approach for reducing copper line resistivity |
US7833893B2 (en) * | 2007-07-10 | 2010-11-16 | International Business Machines Corporation | Method for forming conductive structures |
CN102318044A (zh) * | 2008-05-08 | 2012-01-11 | 巴斯夫欧洲公司 | 包含碳化硅层的层型结构、其制备方法及其用途 |
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US20100252930A1 (en) * | 2009-04-01 | 2010-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Improving Performance of Etch Stop Layer |
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US10032674B2 (en) * | 2015-12-07 | 2018-07-24 | International Business Machines Corporation | Middle of the line subtractive self-aligned contacts |
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