JP2002530696A5 - - Google Patents

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Publication number
JP2002530696A5
JP2002530696A5 JP2000582851A JP2000582851A JP2002530696A5 JP 2002530696 A5 JP2002530696 A5 JP 2002530696A5 JP 2000582851 A JP2000582851 A JP 2000582851A JP 2000582851 A JP2000582851 A JP 2000582851A JP 2002530696 A5 JP2002530696 A5 JP 2002530696A5
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JP
Japan
Prior art keywords
alkyl
alkoxy
integer
coch
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000582851A
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English (en)
Japanese (ja)
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JP2002530696A (ja
JP4452408B2 (ja
Filing date
Publication date
Priority claimed from US09/195,057 external-priority patent/US6114085A/en
Application filed filed Critical
Publication of JP2002530696A publication Critical patent/JP2002530696A/ja
Publication of JP2002530696A5 publication Critical patent/JP2002530696A5/ja
Application granted granted Critical
Publication of JP4452408B2 publication Critical patent/JP4452408B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2000582851A 1998-11-18 1999-11-09 深紫外線フォトレジスト用の反射防止膜用コーティング組成物 Expired - Lifetime JP4452408B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/195,057 1998-11-18
US09/195,057 US6114085A (en) 1998-11-18 1998-11-18 Antireflective composition for a deep ultraviolet photoresist
PCT/EP1999/008571 WO2000029906A2 (en) 1998-11-18 1999-11-09 Antireflective composition for a deep ultraviolet photoresist

Publications (3)

Publication Number Publication Date
JP2002530696A JP2002530696A (ja) 2002-09-17
JP2002530696A5 true JP2002530696A5 (enExample) 2006-11-24
JP4452408B2 JP4452408B2 (ja) 2010-04-21

Family

ID=22719888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000582851A Expired - Lifetime JP4452408B2 (ja) 1998-11-18 1999-11-09 深紫外線フォトレジスト用の反射防止膜用コーティング組成物

Country Status (11)

Country Link
US (1) US6114085A (enExample)
EP (1) EP1131678B1 (enExample)
JP (1) JP4452408B2 (enExample)
KR (1) KR100613672B1 (enExample)
CN (1) CN1215381C (enExample)
AT (1) ATE436042T1 (enExample)
DE (1) DE69941091D1 (enExample)
HK (1) HK1043630A1 (enExample)
MY (1) MY117076A (enExample)
TW (1) TWI223128B (enExample)
WO (1) WO2000029906A2 (enExample)

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US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
KR20120105545A (ko) * 2010-01-18 2012-09-25 닛산 가가쿠 고교 가부시키 가이샤 감광성 레지스트 하층막 형성 조성물 및 레지스트 패턴의 형성 방법
ES2611478T3 (es) * 2010-08-05 2017-05-09 Basf Se Procedimiento para la preparación de alcoxilatos de aminotriazina
JP5517848B2 (ja) * 2010-09-08 2014-06-11 キヤノン株式会社 液体吐出ヘッドの製造方法
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