JPH11167200A5 - - Google Patents

Info

Publication number
JPH11167200A5
JPH11167200A5 JP1998281868A JP28186898A JPH11167200A5 JP H11167200 A5 JPH11167200 A5 JP H11167200A5 JP 1998281868 A JP1998281868 A JP 1998281868A JP 28186898 A JP28186898 A JP 28186898A JP H11167200 A5 JPH11167200 A5 JP H11167200A5
Authority
JP
Japan
Prior art keywords
fairly
activation energy
deblocking
blocking groups
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998281868A
Other languages
English (en)
Japanese (ja)
Other versions
JP4317277B2 (ja
JPH11167200A (ja
Filing date
Publication date
Priority claimed from US08/921,985 external-priority patent/US6037107A/en
Application filed filed Critical
Publication of JPH11167200A publication Critical patent/JPH11167200A/ja
Publication of JPH11167200A5 publication Critical patent/JPH11167200A5/ja
Application granted granted Critical
Publication of JP4317277B2 publication Critical patent/JP4317277B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP28186898A 1997-08-28 1998-08-28 フォトレジスト組成物 Expired - Lifetime JP4317277B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/921,985 US6037107A (en) 1997-08-28 1997-08-28 Photoresist compositions
US921985 1997-08-28

Publications (3)

Publication Number Publication Date
JPH11167200A JPH11167200A (ja) 1999-06-22
JPH11167200A5 true JPH11167200A5 (enExample) 2009-05-28
JP4317277B2 JP4317277B2 (ja) 2009-08-19

Family

ID=25446302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28186898A Expired - Lifetime JP4317277B2 (ja) 1997-08-28 1998-08-28 フォトレジスト組成物

Country Status (3)

Country Link
US (3) US6037107A (enExample)
JP (1) JP4317277B2 (enExample)
KR (1) KR100572811B1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026093B2 (en) * 1997-08-28 2006-04-11 Shipley Company, L.L.C. Photoresist compositions
US7482107B2 (en) * 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
JP3798552B2 (ja) * 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
JP4135276B2 (ja) * 1999-10-12 2008-08-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7192836B1 (en) * 1999-11-29 2007-03-20 Advanced Micro Devices, Inc. Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance
JP4150491B2 (ja) * 2000-07-13 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
CN100339767C (zh) 2001-06-22 2007-09-26 和光纯药工业株式会社 抗蚀剂组合物
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
TW584786B (en) * 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
GR1004163B (el) * 2001-11-01 2003-02-21 Πολυκυκλικα παραγωγα τροποποιησης των οπτικων ιδιοτητων και των ιδιοτητων αντοχης στο πλασμα των πολυμερων λιθογραφιας
KR100923022B1 (ko) * 2002-06-14 2009-10-22 삼성전자주식회사 감광물질 코팅 방법 및 장치
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US6849495B2 (en) * 2003-02-28 2005-02-01 Infineon Technologies Ag Selective silicidation scheme for memory devices
JP4393861B2 (ja) * 2003-03-14 2010-01-06 東京応化工業株式会社 磁性膜のパターン形成方法
US7413845B2 (en) * 2004-04-23 2008-08-19 Hitachi Global Storage Technologies Netherlands B.V. Elimination of write head plating defects using high activation chemically amplified resist
US6943317B1 (en) 2004-07-02 2005-09-13 Advanced Energy Industries, Inc. Apparatus and method for fast arc extinction with early shunting of arc current in plasma
KR20060085723A (ko) * 2005-01-25 2006-07-28 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성방법
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
CN101430507A (zh) * 2007-08-27 2009-05-13 E.I.内穆尔杜邦公司 基片上的可光聚合干膜的湿层叠以及与湿层叠有关的组合物
US20090087774A1 (en) * 2007-08-27 2009-04-02 E.I. Du Pont De Nemours And Company Compositions and methods for wet lamination of photopolymerizable dry films onto substrates
WO2011077993A1 (ja) * 2009-12-22 2011-06-30 Jsr株式会社 感放射線性組成物
JP4945688B2 (ja) * 2011-02-07 2012-06-06 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
JP2017181895A (ja) * 2016-03-31 2017-10-05 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5258257A (en) * 1991-09-23 1993-11-02 Shipley Company Inc. Radiation sensitive compositions comprising polymer having acid labile groups
JP2839172B2 (ja) * 1992-10-29 1998-12-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 非金属感光性酸生成剤を含む化学的に増幅されたフォトレジスト
JP2688168B2 (ja) * 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
KR100233367B1 (ko) * 1993-04-15 1999-12-01 카나가와 치히로 레지스트 재료
JP3427133B2 (ja) * 1993-06-01 2003-07-14 信越化学工業株式会社 レジスト材料
US6159665A (en) * 1993-06-17 2000-12-12 Lucent Technologies Inc. Processes using photosensitive materials including a nitro benzyl ester photoacid generator
EP0652485B1 (en) * 1993-11-08 2000-01-12 AT&T Corp. A process for fabricating a device
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5593812A (en) * 1995-02-17 1997-01-14 International Business Machines Corporation Photoresist having increased sensitivity and use thereof
US5609989A (en) * 1995-06-06 1997-03-11 International Business Machines, Corporation Acid scavengers for use in chemically amplified photoresists
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
KR0183901B1 (ko) * 1996-07-03 1999-04-01 삼성전자 주식회사 레지스트 조성물

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