KR100572811B1 - 감광성내식막조성물 - Google Patents

감광성내식막조성물 Download PDF

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Publication number
KR100572811B1
KR100572811B1 KR1019980035076A KR19980035076A KR100572811B1 KR 100572811 B1 KR100572811 B1 KR 100572811B1 KR 1019980035076 A KR1019980035076 A KR 1019980035076A KR 19980035076 A KR19980035076 A KR 19980035076A KR 100572811 B1 KR100572811 B1 KR 100572811B1
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KR
South Korea
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substituted
carbon atoms
group
unsubstituted
groups
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KR1019980035076A
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Korean (ko)
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KR19990023963A (ko
Inventor
제임스 더블유. 택커레이
제임스 에프. 카메론
로저 에프. 신타
Original Assignee
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
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Publication of KR19990023963A publication Critical patent/KR19990023963A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019980035076A 1997-08-28 1998-08-28 감광성내식막조성물 Expired - Lifetime KR100572811B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/921,985 1997-08-28
US08/921,985 US6037107A (en) 1997-08-28 1997-08-28 Photoresist compositions
US8/921,985 1997-08-28

Publications (2)

Publication Number Publication Date
KR19990023963A KR19990023963A (ko) 1999-03-25
KR100572811B1 true KR100572811B1 (ko) 2006-11-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980035076A Expired - Lifetime KR100572811B1 (ko) 1997-08-28 1998-08-28 감광성내식막조성물

Country Status (3)

Country Link
US (3) US6037107A (enExample)
JP (1) JP4317277B2 (enExample)
KR (1) KR100572811B1 (enExample)

Families Citing this family (29)

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US7026093B2 (en) * 1997-08-28 2006-04-11 Shipley Company, L.L.C. Photoresist compositions
US7482107B2 (en) * 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
JP3798552B2 (ja) * 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
JP4135276B2 (ja) * 1999-10-12 2008-08-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7192836B1 (en) * 1999-11-29 2007-03-20 Advanced Micro Devices, Inc. Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance
JP4150491B2 (ja) * 2000-07-13 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
CN100339767C (zh) 2001-06-22 2007-09-26 和光纯药工业株式会社 抗蚀剂组合物
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
TW584786B (en) * 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
GR1004163B (el) * 2001-11-01 2003-02-21 Πολυκυκλικα παραγωγα τροποποιησης των οπτικων ιδιοτητων και των ιδιοτητων αντοχης στο πλασμα των πολυμερων λιθογραφιας
KR100923022B1 (ko) * 2002-06-14 2009-10-22 삼성전자주식회사 감광물질 코팅 방법 및 장치
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US6849495B2 (en) * 2003-02-28 2005-02-01 Infineon Technologies Ag Selective silicidation scheme for memory devices
JP4393861B2 (ja) * 2003-03-14 2010-01-06 東京応化工業株式会社 磁性膜のパターン形成方法
US7413845B2 (en) * 2004-04-23 2008-08-19 Hitachi Global Storage Technologies Netherlands B.V. Elimination of write head plating defects using high activation chemically amplified resist
US6943317B1 (en) 2004-07-02 2005-09-13 Advanced Energy Industries, Inc. Apparatus and method for fast arc extinction with early shunting of arc current in plasma
KR20060085723A (ko) * 2005-01-25 2006-07-28 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성방법
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
CN101430507A (zh) * 2007-08-27 2009-05-13 E.I.内穆尔杜邦公司 基片上的可光聚合干膜的湿层叠以及与湿层叠有关的组合物
US20090087774A1 (en) * 2007-08-27 2009-04-02 E.I. Du Pont De Nemours And Company Compositions and methods for wet lamination of photopolymerizable dry films onto substrates
WO2011077993A1 (ja) * 2009-12-22 2011-06-30 Jsr株式会社 感放射線性組成物
JP4945688B2 (ja) * 2011-02-07 2012-06-06 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
JP2017181895A (ja) * 2016-03-31 2017-10-05 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物

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Also Published As

Publication number Publication date
JP4317277B2 (ja) 2009-08-19
JPH11167200A (ja) 1999-06-22
KR19990023963A (ko) 1999-03-25
US6037107A (en) 2000-03-14
USRE38980E1 (en) 2006-02-14
US6645698B1 (en) 2003-11-11

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