JP4317277B2 - フォトレジスト組成物 - Google Patents

フォトレジスト組成物 Download PDF

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Publication number
JP4317277B2
JP4317277B2 JP28186898A JP28186898A JP4317277B2 JP 4317277 B2 JP4317277 B2 JP 4317277B2 JP 28186898 A JP28186898 A JP 28186898A JP 28186898 A JP28186898 A JP 28186898A JP 4317277 B2 JP4317277 B2 JP 4317277B2
Authority
JP
Japan
Prior art keywords
group
photoresist composition
photoresist
substituted
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP28186898A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11167200A (ja
JPH11167200A5 (enExample
Inventor
ジェームズ・ダブリュー・サッカレー
ジェームズ・エフ・キャメロン
ロジャー・エフ・シンタ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JPH11167200A publication Critical patent/JPH11167200A/ja
Publication of JPH11167200A5 publication Critical patent/JPH11167200A5/ja
Application granted granted Critical
Publication of JP4317277B2 publication Critical patent/JP4317277B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP28186898A 1997-08-28 1998-08-28 フォトレジスト組成物 Expired - Lifetime JP4317277B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/921,985 US6037107A (en) 1997-08-28 1997-08-28 Photoresist compositions
US921985 1997-08-28

Publications (3)

Publication Number Publication Date
JPH11167200A JPH11167200A (ja) 1999-06-22
JPH11167200A5 JPH11167200A5 (enExample) 2009-05-28
JP4317277B2 true JP4317277B2 (ja) 2009-08-19

Family

ID=25446302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28186898A Expired - Lifetime JP4317277B2 (ja) 1997-08-28 1998-08-28 フォトレジスト組成物

Country Status (3)

Country Link
US (3) US6037107A (enExample)
JP (1) JP4317277B2 (enExample)
KR (1) KR100572811B1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026093B2 (en) * 1997-08-28 2006-04-11 Shipley Company, L.L.C. Photoresist compositions
US7482107B2 (en) * 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
JP3798552B2 (ja) * 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
US7704668B1 (en) * 1998-08-04 2010-04-27 Rohm And Haas Electronic Materials Llc Photoresist compositions and methods and articles of manufacture comprising same
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
JP4135276B2 (ja) * 1999-10-12 2008-08-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7192836B1 (en) * 1999-11-29 2007-03-20 Advanced Micro Devices, Inc. Method and system for providing halo implant to a semiconductor device with minimal impact to the junction capacitance
JP4150491B2 (ja) * 2000-07-13 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6482567B1 (en) * 2000-08-25 2002-11-19 Shipley Company, L.L.C. Oxime sulfonate and N-oxyimidosulfonate photoacid generators and photoresists comprising same
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
CN100339767C (zh) 2001-06-22 2007-09-26 和光纯药工业株式会社 抗蚀剂组合物
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
TW584786B (en) * 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
GR1004163B (el) * 2001-11-01 2003-02-21 Πολυκυκλικα παραγωγα τροποποιησης των οπτικων ιδιοτητων και των ιδιοτητων αντοχης στο πλασμα των πολυμερων λιθογραφιας
KR100923022B1 (ko) * 2002-06-14 2009-10-22 삼성전자주식회사 감광물질 코팅 방법 및 장치
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
US6849495B2 (en) * 2003-02-28 2005-02-01 Infineon Technologies Ag Selective silicidation scheme for memory devices
JP4393861B2 (ja) * 2003-03-14 2010-01-06 東京応化工業株式会社 磁性膜のパターン形成方法
US7413845B2 (en) * 2004-04-23 2008-08-19 Hitachi Global Storage Technologies Netherlands B.V. Elimination of write head plating defects using high activation chemically amplified resist
US6943317B1 (en) 2004-07-02 2005-09-13 Advanced Energy Industries, Inc. Apparatus and method for fast arc extinction with early shunting of arc current in plasma
KR20060085723A (ko) * 2005-01-25 2006-07-28 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성방법
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
CN101430507A (zh) * 2007-08-27 2009-05-13 E.I.内穆尔杜邦公司 基片上的可光聚合干膜的湿层叠以及与湿层叠有关的组合物
US20090087774A1 (en) * 2007-08-27 2009-04-02 E.I. Du Pont De Nemours And Company Compositions and methods for wet lamination of photopolymerizable dry films onto substrates
WO2011077993A1 (ja) * 2009-12-22 2011-06-30 Jsr株式会社 感放射線性組成物
JP4945688B2 (ja) * 2011-02-07 2012-06-06 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
JP2017181895A (ja) * 2016-03-31 2017-10-05 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
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US5258257A (en) * 1991-09-23 1993-11-02 Shipley Company Inc. Radiation sensitive compositions comprising polymer having acid labile groups
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JP2688168B2 (ja) * 1992-11-03 1997-12-08 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストイメージ形成プロセス
KR100233367B1 (ko) * 1993-04-15 1999-12-01 카나가와 치히로 레지스트 재료
JP3427133B2 (ja) * 1993-06-01 2003-07-14 信越化学工業株式会社 レジスト材料
US6159665A (en) * 1993-06-17 2000-12-12 Lucent Technologies Inc. Processes using photosensitive materials including a nitro benzyl ester photoacid generator
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JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
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US5593812A (en) * 1995-02-17 1997-01-14 International Business Machines Corporation Photoresist having increased sensitivity and use thereof
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US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
KR0183901B1 (ko) * 1996-07-03 1999-04-01 삼성전자 주식회사 레지스트 조성물

Also Published As

Publication number Publication date
JPH11167200A (ja) 1999-06-22
KR19990023963A (ko) 1999-03-25
US6037107A (en) 2000-03-14
USRE38980E1 (en) 2006-02-14
US6645698B1 (en) 2003-11-11
KR100572811B1 (ko) 2006-11-10

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