JP4452408B2 - 深紫外線フォトレジスト用の反射防止膜用コーティング組成物 - Google Patents

深紫外線フォトレジスト用の反射防止膜用コーティング組成物 Download PDF

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Publication number
JP4452408B2
JP4452408B2 JP2000582851A JP2000582851A JP4452408B2 JP 4452408 B2 JP4452408 B2 JP 4452408B2 JP 2000582851 A JP2000582851 A JP 2000582851A JP 2000582851 A JP2000582851 A JP 2000582851A JP 4452408 B2 JP4452408 B2 JP 4452408B2
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JP
Japan
Prior art keywords
photoresist
composition
film
coating
seconds
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Expired - Lifetime
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JP2000582851A
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English (en)
Japanese (ja)
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JP2002530696A (ja
JP2002530696A5 (enExample
Inventor
パドナマバン・ムニラツナ
ダムメル・ラルフ・アール
フィクナー・スタンレイ・エイ
オウバーランダー・ジョセフ・イー
サガン・ジョン・ピー
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AZ Electronic Materials Japan Co Ltd
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AZ Electronic Materials Japan Co Ltd
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Publication of JP2002530696A publication Critical patent/JP2002530696A/ja
Publication of JP2002530696A5 publication Critical patent/JP2002530696A5/ja
Application granted granted Critical
Publication of JP4452408B2 publication Critical patent/JP4452408B2/ja
Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D231/00—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings
    • C07D231/02—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings
    • C07D231/10—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
    • C07D231/14—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
    • C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
    • C08L81/06—Polysulfones; Polyethersulfones
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
    • G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
    • G03C1/835—Macromolecular substances therefor, e.g. mordants
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2000582851A 1998-11-18 1999-11-09 深紫外線フォトレジスト用の反射防止膜用コーティング組成物 Expired - Lifetime JP4452408B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/195,057 1998-11-18
US09/195,057 US6114085A (en) 1998-11-18 1998-11-18 Antireflective composition for a deep ultraviolet photoresist
PCT/EP1999/008571 WO2000029906A2 (en) 1998-11-18 1999-11-09 Antireflective composition for a deep ultraviolet photoresist

Publications (3)

Publication Number Publication Date
JP2002530696A JP2002530696A (ja) 2002-09-17
JP2002530696A5 JP2002530696A5 (enExample) 2006-11-24
JP4452408B2 true JP4452408B2 (ja) 2010-04-21

Family

ID=22719888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000582851A Expired - Lifetime JP4452408B2 (ja) 1998-11-18 1999-11-09 深紫外線フォトレジスト用の反射防止膜用コーティング組成物

Country Status (11)

Country Link
US (1) US6114085A (enExample)
EP (1) EP1131678B1 (enExample)
JP (1) JP4452408B2 (enExample)
KR (1) KR100613672B1 (enExample)
CN (1) CN1215381C (enExample)
AT (1) ATE436042T1 (enExample)
DE (1) DE69941091D1 (enExample)
HK (1) HK1043630A1 (enExample)
MY (1) MY117076A (enExample)
TW (1) TWI223128B (enExample)
WO (1) WO2000029906A2 (enExample)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258732B1 (en) * 1999-02-04 2001-07-10 International Business Machines Corporation Method of forming a patterned organic dielectric layer on a substrate
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6610808B2 (en) 1999-03-12 2003-08-26 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6924339B2 (en) * 1999-03-12 2005-08-02 Arch Specialty Chemicals, Inc. Thermally cured underlayer for lithographic application
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6492092B1 (en) * 1999-03-12 2002-12-10 Arch Specialty Chemicals, Inc. Hydroxy-epoxide thermally cured undercoat for 193 NM lithography
DE50015750D1 (de) * 1999-04-28 2009-11-12 Qimonda Ag Bottomresist
US6797451B2 (en) * 1999-07-30 2004-09-28 Hynix Semiconductor Inc. Reflection-inhibiting resin used in process for forming photoresist pattern
US6686124B1 (en) * 2000-03-14 2004-02-03 International Business Machines Corporation Multifunctional polymeric materials and use thereof
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
EP1172695A1 (en) * 2000-07-14 2002-01-16 Shipley Company LLC Barrier layer
JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
KR100520163B1 (ko) * 2001-06-21 2005-10-10 주식회사 하이닉스반도체 니트로기를 포함하는 신규의 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물
JP3445584B2 (ja) * 2001-08-10 2003-09-08 沖電気工業株式会社 反射防止膜のエッチング方法
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
JP3816006B2 (ja) * 2002-01-16 2006-08-30 松下電器産業株式会社 パターン形成方法
JP2005524972A (ja) * 2002-02-06 2005-08-18 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド 半導体応力緩衝剤コーティングの改良されたエッジビーズ除去組成物およびその使用
US6894104B2 (en) 2002-05-23 2005-05-17 Brewer Science Inc. Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
KR100636663B1 (ko) * 2002-06-24 2006-10-23 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
FR2842533B1 (fr) * 2002-07-18 2006-11-24 Hynix Semiconductor Inc Composition de revetement organique antireflet, procede de formation de motifs de photoresist a l'aide de cette composition et dispositif a semi-conducteur fabrique grace a ce procede
US7208249B2 (en) * 2002-09-30 2007-04-24 Applied Materials, Inc. Method of producing a patterned photoresist used to prepare high performance photomasks
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
US7264913B2 (en) * 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
KR100832247B1 (ko) * 2002-11-27 2008-05-28 주식회사 동진쎄미켐 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법
KR100512171B1 (ko) * 2003-01-24 2005-09-02 삼성전자주식회사 하층 레지스트용 조성물
CN1768306B (zh) * 2003-04-02 2011-12-14 日产化学工业株式会社 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物
CN1774673B (zh) 2003-04-17 2010-09-29 日产化学工业株式会社 多孔质下层膜和用于形成多孔质下层膜的形成下层膜的组合物
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7270931B2 (en) * 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
US7638266B2 (en) * 2004-08-12 2009-12-29 International Business Machines Corporation Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer
KR100611767B1 (ko) * 2004-08-30 2006-08-10 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 필름을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
KR100623694B1 (ko) 2004-08-30 2006-09-19 삼성에스디아이 주식회사 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법
KR20060033554A (ko) * 2004-10-15 2006-04-19 삼성에스디아이 주식회사 레이저 열전사 장치 및 이를 이용한 유기전계 발광 소자의제조 방법
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
US7470505B2 (en) * 2005-09-23 2008-12-30 Lexmark International, Inc. Methods for making micro-fluid ejection head structures
US20070083995A1 (en) * 2005-10-12 2007-04-19 Purdy William J Fluidized positioning and protection system
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
US7816069B2 (en) * 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US7754414B2 (en) * 2006-07-12 2010-07-13 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP4724072B2 (ja) * 2006-08-17 2011-07-13 富士通株式会社 レジストパターンの形成方法、半導体装置及びその製造方法
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
JP5045064B2 (ja) * 2006-11-02 2012-10-10 Ｊｎｃ株式会社 アルカリ可溶性重合体及びそれを用いたポジ型感光性樹脂組成物
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
US7833692B2 (en) * 2007-03-12 2010-11-16 Brewer Science Inc. Amine-arresting additives for materials used in photolithographic processes
TWI460535B (zh) * 2007-03-12 2014-11-11 羅門哈斯電子材料有限公司 酚系聚合物及含該酚系聚合物之光阻
KR100886314B1 (ko) * 2007-06-25 2009-03-04 금호석유화학 주식회사 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
TWI619770B (zh) * 2007-11-30 2018-04-01 布勒岡股份有限公司 新穎的矽氧烷聚合物組成物
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
KR20120105545A (ko) * 2010-01-18 2012-09-25 닛산 가가쿠 고교 가부시키 가이샤 감광성 레지스트 하층막 형성 조성물 및 레지스트 패턴의 형성 방법
ES2611478T3 (es) * 2010-08-05 2017-05-09 Basf Se Procedimiento para la preparación de alcoxilatos de aminotriazina
JP5517848B2 (ja) * 2010-09-08 2014-06-11 キヤノン株式会社 液体吐出ヘッドの製造方法
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
CN103351465B (zh) 2013-07-15 2015-09-09 京东方科技集团股份有限公司 光刻胶单体、光刻胶及它们的制备方法、彩色滤光片
CN103646672A (zh) * 2013-12-02 2014-03-19 朱嵘飞 一种集材料与结构吸波功能于一体的新型吸波功能设计
US10295907B2 (en) 2014-05-22 2019-05-21 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition for lithography containing polymer having acrylamide structure and acrylic acid ester structure
US11262656B2 (en) * 2016-03-31 2022-03-01 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
CN115386858B (zh) * 2022-07-15 2024-06-04 华东理工大学 一种有机无机杂化金属氧化物薄膜的气相沉积制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS61228438A (ja) * 1985-04-02 1986-10-11 Konishiroku Photo Ind Co Ltd 感光性組成物
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US6165697A (en) * 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5294680A (en) * 1992-07-24 1994-03-15 International Business Machines Corporation Polymeric dyes for antireflective coatings
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
TW464791B (en) * 1996-09-30 2001-11-21 Hoechst Celanese Corp Bottom antireflective coatings containing an arylhydrazo dye
US5919601A (en) * 1996-11-12 1999-07-06 Kodak Polychrome Graphics, Llc Radiation-sensitive compositions and printing plates
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers

Also Published As

Publication number Publication date
MY117076A (en) 2004-04-30
KR100613672B1 (ko) 2006-08-21
JP2002530696A (ja) 2002-09-17
WO2000029906A3 (en) 2000-10-05
HK1043630A1 (zh) 2002-09-20
US6114085A (en) 2000-09-05
WO2000029906A2 (en) 2000-05-25
EP1131678A2 (en) 2001-09-12
KR20010089464A (ko) 2001-10-06
CN1330779A (zh) 2002-01-09
ATE436042T1 (de) 2009-07-15
TWI223128B (en) 2004-11-01
EP1131678B1 (en) 2009-07-08
DE69941091D1 (de) 2009-08-20
CN1215381C (zh) 2005-08-17

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