ATE436042T1 - Antireflex-zusammensetzung für einen fernen-uv- empfindlichen fotoresist - Google Patents
Antireflex-zusammensetzung für einen fernen-uv- empfindlichen fotoresistInfo
- Publication number
- ATE436042T1 ATE436042T1 AT99969903T AT99969903T ATE436042T1 AT E436042 T1 ATE436042 T1 AT E436042T1 AT 99969903 T AT99969903 T AT 99969903T AT 99969903 T AT99969903 T AT 99969903T AT E436042 T1 ATE436042 T1 AT E436042T1
- Authority
- AT
- Austria
- Prior art keywords
- composition
- antireflex
- far
- sensitive photoresist
- photolithography
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D231/00—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings
- C07D231/02—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings
- C07D231/10—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members
- C07D231/14—Heterocyclic compounds containing 1,2-diazole or hydrogenated 1,2-diazole rings not condensed with other rings having two or three double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/06—Polysulfones; Polyethersulfones
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/76—Photosensitive materials characterised by the base or auxiliary layers
- G03C1/825—Photosensitive materials characterised by the base or auxiliary layers characterised by antireflection means or visible-light filtering means, e.g. antihalation
- G03C1/835—Macromolecular substances therefor, e.g. mordants
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Paints Or Removers (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/195,057 US6114085A (en) | 1998-11-18 | 1998-11-18 | Antireflective composition for a deep ultraviolet photoresist |
PCT/EP1999/008571 WO2000029906A2 (en) | 1998-11-18 | 1999-11-09 | Antireflective composition for a deep ultraviolet photoresist |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE436042T1 true ATE436042T1 (de) | 2009-07-15 |
Family
ID=22719888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT99969903T ATE436042T1 (de) | 1998-11-18 | 1999-11-09 | Antireflex-zusammensetzung für einen fernen-uv- empfindlichen fotoresist |
Country Status (11)
Country | Link |
---|---|
US (1) | US6114085A (de) |
EP (1) | EP1131678B1 (de) |
JP (1) | JP4452408B2 (de) |
KR (1) | KR100613672B1 (de) |
CN (1) | CN1215381C (de) |
AT (1) | ATE436042T1 (de) |
DE (1) | DE69941091D1 (de) |
HK (1) | HK1043630A1 (de) |
MY (1) | MY117076A (de) |
TW (1) | TWI223128B (de) |
WO (1) | WO2000029906A2 (de) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6258732B1 (en) * | 1999-02-04 | 2001-07-10 | International Business Machines Corporation | Method of forming a patterned organic dielectric layer on a substrate |
US6316165B1 (en) * | 1999-03-08 | 2001-11-13 | Shipley Company, L.L.C. | Planarizing antireflective coating compositions |
US6323287B1 (en) * | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
US6492092B1 (en) * | 1999-03-12 | 2002-12-10 | Arch Specialty Chemicals, Inc. | Hydroxy-epoxide thermally cured undercoat for 193 NM lithography |
US6610808B2 (en) | 1999-03-12 | 2003-08-26 | Arch Specialty Chemicals, Inc. | Thermally cured underlayer for lithographic application |
US6924339B2 (en) * | 1999-03-12 | 2005-08-02 | Arch Specialty Chemicals, Inc. | Thermally cured underlayer for lithographic application |
DE50015750D1 (de) * | 1999-04-28 | 2009-11-12 | Qimonda Ag | Bottomresist |
US6797451B2 (en) * | 1999-07-30 | 2004-09-28 | Hynix Semiconductor Inc. | Reflection-inhibiting resin used in process for forming photoresist pattern |
US6686124B1 (en) * | 2000-03-14 | 2004-02-03 | International Business Machines Corporation | Multifunctional polymeric materials and use thereof |
US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
EP1172695A1 (de) * | 2000-07-14 | 2002-01-16 | Shipley Company LLC | Sperrschicht |
JP3509760B2 (ja) * | 2001-02-08 | 2004-03-22 | 株式会社半導体先端テクノロジーズ | 半導体装置の製造方法 |
TW594416B (en) * | 2001-05-08 | 2004-06-21 | Shipley Co Llc | Photoimageable composition |
KR100520163B1 (ko) * | 2001-06-21 | 2005-10-10 | 주식회사 하이닉스반도체 | 니트로기를 포함하는 신규의 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물 |
JP3445584B2 (ja) * | 2001-08-10 | 2003-09-08 | 沖電気工業株式会社 | 反射防止膜のエッチング方法 |
US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
US6844131B2 (en) | 2002-01-09 | 2005-01-18 | Clariant Finance (Bvi) Limited | Positive-working photoimageable bottom antireflective coating |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
JP3816006B2 (ja) * | 2002-01-16 | 2006-08-30 | 松下電器産業株式会社 | パターン形成方法 |
EP1554033A4 (de) * | 2002-02-06 | 2007-12-05 | Fujifilm Electronic Materials | Verbesserte zusammensetzungen zur entfernung von randperlen von halbleiterbelastungspufferbeschichtungen und verfahren zu ihrer verwendung |
US6894104B2 (en) | 2002-05-23 | 2005-05-17 | Brewer Science Inc. | Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers |
KR100636663B1 (ko) * | 2002-06-24 | 2006-10-23 | 주식회사 하이닉스반도체 | 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법 |
FR2842533B1 (fr) * | 2002-07-18 | 2006-11-24 | Hynix Semiconductor Inc | Composition de revetement organique antireflet, procede de formation de motifs de photoresist a l'aide de cette composition et dispositif a semi-conducteur fabrique grace a ce procede |
US7208249B2 (en) * | 2002-09-30 | 2007-04-24 | Applied Materials, Inc. | Method of producing a patterned photoresist used to prepare high performance photomasks |
EP1422566A1 (de) * | 2002-11-20 | 2004-05-26 | Shipley Company, L.L.C. | Mehrlagige Fotoresist-Systeme |
US7264913B2 (en) * | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
KR100832247B1 (ko) * | 2002-11-27 | 2008-05-28 | 주식회사 동진쎄미켐 | 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성방법 |
KR100512171B1 (ko) * | 2003-01-24 | 2005-09-02 | 삼성전자주식회사 | 하층 레지스트용 조성물 |
CN101550265B (zh) * | 2003-04-02 | 2014-04-16 | 日产化学工业株式会社 | 含有环氧化合物和羧酸化合物的光刻用形成下层膜的组合物 |
CN1774673B (zh) | 2003-04-17 | 2010-09-29 | 日产化学工业株式会社 | 多孔质下层膜和用于形成多孔质下层膜的形成下层膜的组合物 |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
US7270931B2 (en) * | 2003-10-06 | 2007-09-18 | International Business Machines Corporation | Silicon-containing compositions for spin-on ARC/hardmask materials |
US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
US20050255410A1 (en) | 2004-04-29 | 2005-11-17 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
US7638266B2 (en) * | 2004-08-12 | 2009-12-29 | International Business Machines Corporation | Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer |
KR100611767B1 (ko) | 2004-08-30 | 2006-08-10 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 그 필름을 사용하여 제조되는유기 전계 발광 소자의 제조 방법 |
KR100623694B1 (ko) * | 2004-08-30 | 2006-09-19 | 삼성에스디아이 주식회사 | 레이저 전사용 도너 기판 및 그 기판을 사용하여 제조되는유기 전계 발광 소자의 제조 방법 |
KR20060033554A (ko) * | 2004-10-15 | 2006-04-19 | 삼성에스디아이 주식회사 | 레이저 열전사 장치 및 이를 이용한 유기전계 발광 소자의제조 방법 |
US20060177772A1 (en) * | 2005-02-10 | 2006-08-10 | Abdallah David J | Process of imaging a photoresist with multiple antireflective coatings |
US7470505B2 (en) * | 2005-09-23 | 2008-12-30 | Lexmark International, Inc. | Methods for making micro-fluid ejection head structures |
WO2007047379A2 (en) * | 2005-10-12 | 2007-04-26 | Sundance Enterprises | Fluidized positioning and protection system |
US7544750B2 (en) * | 2005-10-13 | 2009-06-09 | International Business Machines Corporation | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
US7816069B2 (en) * | 2006-06-23 | 2010-10-19 | International Business Machines Corporation | Graded spin-on organic antireflective coating for photolithography |
US7754414B2 (en) * | 2006-07-12 | 2010-07-13 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
JP4724072B2 (ja) * | 2006-08-17 | 2011-07-13 | 富士通株式会社 | レジストパターンの形成方法、半導体装置及びその製造方法 |
US7416834B2 (en) * | 2006-09-27 | 2008-08-26 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
US7666575B2 (en) | 2006-10-18 | 2010-02-23 | Az Electronic Materials Usa Corp | Antireflective coating compositions |
JP5045064B2 (ja) * | 2006-11-02 | 2012-10-10 | Jnc株式会社 | アルカリ可溶性重合体及びそれを用いたポジ型感光性樹脂組成物 |
US7824844B2 (en) * | 2007-01-19 | 2010-11-02 | Az Electronic Materials Usa Corp. | Solvent mixtures for antireflective coating compositions for photoresists |
US8153346B2 (en) * | 2007-02-23 | 2012-04-10 | Fujifilm Electronic Materials, U.S.A., Inc. | Thermally cured underlayer for lithographic application |
US7833692B2 (en) * | 2007-03-12 | 2010-11-16 | Brewer Science Inc. | Amine-arresting additives for materials used in photolithographic processes |
TWI460535B (zh) * | 2007-03-12 | 2014-11-11 | 羅門哈斯電子材料有限公司 | 酚系聚合物及含該酚系聚合物之光阻 |
KR100886314B1 (ko) * | 2007-06-25 | 2009-03-04 | 금호석유화학 주식회사 | 유기반사방지막용 공중합체 및 이를 포함하는유기반사방지막 조성물 |
US8088548B2 (en) * | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
JP5631738B2 (ja) * | 2007-11-30 | 2014-11-26 | オプティチューン オサケ ユキチュア | 新規シロキサンポリマー組成物 |
US20090253081A1 (en) * | 2008-04-02 | 2009-10-08 | David Abdallah | Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step |
US20090253080A1 (en) * | 2008-04-02 | 2009-10-08 | Dammel Ralph R | Photoresist Image-Forming Process Using Double Patterning |
US20100040838A1 (en) * | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
US8084186B2 (en) * | 2009-02-10 | 2011-12-27 | Az Electronic Materials Usa Corp. | Hardmask process for forming a reverse tone image using polysilazane |
US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
US20120288795A1 (en) * | 2010-01-18 | 2012-11-15 | Nissan Chemical Industries, Ltd. | Composition for formation of photosensitive resist underlayer film and method for formation of resist pattern |
ES2611478T3 (es) * | 2010-08-05 | 2017-05-09 | Basf Se | Procedimiento para la preparación de alcoxilatos de aminotriazina |
JP5517848B2 (ja) * | 2010-09-08 | 2014-06-11 | キヤノン株式会社 | 液体吐出ヘッドの製造方法 |
US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
CN103351465B (zh) | 2013-07-15 | 2015-09-09 | 京东方科技集团股份有限公司 | 光刻胶单体、光刻胶及它们的制备方法、彩色滤光片 |
CN103646672A (zh) * | 2013-12-02 | 2014-03-19 | 朱嵘飞 | 一种集材料与结构吸波功能于一体的新型吸波功能设计 |
CN106164774B (zh) | 2014-05-22 | 2019-12-13 | 日产化学工业株式会社 | 含有包含丙烯酰胺结构和丙烯酸酯结构的聚合物的光刻用抗蚀剂下层膜形成用组合物 |
US11262656B2 (en) * | 2016-03-31 | 2022-03-01 | Rohm And Haas Electronic Materials Korea Ltd. | Coating compositions for use with an overcoated photoresist |
US20210271164A1 (en) * | 2020-02-27 | 2021-09-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of manufacturing a semiconductor device |
CN115386858B (zh) * | 2022-07-15 | 2024-06-04 | 华东理工大学 | 一种有机无机杂化金属氧化物薄膜的气相沉积制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) * | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPS61228438A (ja) * | 1985-04-02 | 1986-10-11 | Konishiroku Photo Ind Co Ltd | 感光性組成物 |
DE69125634T2 (de) * | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
US6165697A (en) * | 1991-11-15 | 2000-12-26 | Shipley Company, L.L.C. | Antihalation compositions |
US5294680A (en) * | 1992-07-24 | 1994-03-15 | International Business Machines Corporation | Polymeric dyes for antireflective coatings |
DE69322946T2 (de) * | 1992-11-03 | 1999-08-12 | International Business Machines Corp., Armonk, N.Y. | Photolackzusammensetzung |
US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5652317A (en) * | 1996-08-16 | 1997-07-29 | Hoechst Celanese Corporation | Antireflective coatings for photoresist compositions |
TW464791B (en) * | 1996-09-30 | 2001-11-21 | Hoechst Celanese Corp | Bottom antireflective coatings containing an arylhydrazo dye |
US5919601A (en) * | 1996-11-12 | 1999-07-06 | Kodak Polychrome Graphics, Llc | Radiation-sensitive compositions and printing plates |
KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
US5981145A (en) * | 1997-04-30 | 1999-11-09 | Clariant Finance (Bvi) Limited | Light absorbing polymers |
-
1998
- 1998-11-18 US US09/195,057 patent/US6114085A/en not_active Expired - Lifetime
-
1999
- 1999-10-19 TW TW088118051A patent/TWI223128B/zh not_active IP Right Cessation
- 1999-11-09 JP JP2000582851A patent/JP4452408B2/ja not_active Expired - Lifetime
- 1999-11-09 EP EP99969903A patent/EP1131678B1/de not_active Expired - Lifetime
- 1999-11-09 KR KR1020017006176A patent/KR100613672B1/ko active IP Right Grant
- 1999-11-09 CN CNB998134694A patent/CN1215381C/zh not_active Expired - Lifetime
- 1999-11-09 WO PCT/EP1999/008571 patent/WO2000029906A2/en active IP Right Grant
- 1999-11-09 DE DE69941091T patent/DE69941091D1/de not_active Expired - Lifetime
- 1999-11-09 AT AT99969903T patent/ATE436042T1/de not_active IP Right Cessation
- 1999-11-15 MY MYPI99004952A patent/MY117076A/en unknown
-
2002
- 2002-06-21 HK HK02104626.2A patent/HK1043630A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1131678A2 (de) | 2001-09-12 |
JP4452408B2 (ja) | 2010-04-21 |
KR100613672B1 (ko) | 2006-08-21 |
WO2000029906A3 (en) | 2000-10-05 |
TWI223128B (en) | 2004-11-01 |
MY117076A (en) | 2004-04-30 |
HK1043630A1 (zh) | 2002-09-20 |
CN1215381C (zh) | 2005-08-17 |
US6114085A (en) | 2000-09-05 |
CN1330779A (zh) | 2002-01-09 |
EP1131678B1 (de) | 2009-07-08 |
KR20010089464A (ko) | 2001-10-06 |
DE69941091D1 (de) | 2009-08-20 |
JP2002530696A (ja) | 2002-09-17 |
WO2000029906A2 (en) | 2000-05-25 |
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