JP2002334587A5 - - Google Patents

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Publication number
JP2002334587A5
JP2002334587A5 JP2001137165A JP2001137165A JP2002334587A5 JP 2002334587 A5 JP2002334587 A5 JP 2002334587A5 JP 2001137165 A JP2001137165 A JP 2001137165A JP 2001137165 A JP2001137165 A JP 2001137165A JP 2002334587 A5 JP2002334587 A5 JP 2002334587A5
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JP2001137165A
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Japanese (ja)
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JP4715024B2 (ja
JP2002334587A (ja
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Priority claimed from JP2001137165A external-priority patent/JP4715024B2/ja
Priority to JP2001137165A priority Critical patent/JP4715024B2/ja
Priority to US09/955,160 priority patent/US6587381B2/en
Priority to AT02002973T priority patent/ATE267447T1/de
Priority to EP02002973A priority patent/EP1256960B1/en
Priority to DE60200498T priority patent/DE60200498T2/de
Priority to KR10-2002-0024959A priority patent/KR100446402B1/ko
Priority to CNB021190542A priority patent/CN1228786C/zh
Publication of JP2002334587A publication Critical patent/JP2002334587A/ja
Publication of JP2002334587A5 publication Critical patent/JP2002334587A5/ja
Publication of JP4715024B2 publication Critical patent/JP4715024B2/ja
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Expired - Fee Related legal-status Critical Current

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JP2001137165A 2001-05-08 2001-05-08 不揮発性半導体記憶装置のプログラム方法 Expired - Fee Related JP4715024B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001137165A JP4715024B2 (ja) 2001-05-08 2001-05-08 不揮発性半導体記憶装置のプログラム方法
US09/955,160 US6587381B2 (en) 2001-05-08 2001-09-19 Programming method for non-volatile semiconductor memory device
DE60200498T DE60200498T2 (de) 2001-05-08 2002-02-11 Programmierverfahren für einen nichtflüchtigen Halbleiterspeicher
EP02002973A EP1256960B1 (en) 2001-05-08 2002-02-11 Programming method for non-volatile semiconductor memory device
AT02002973T ATE267447T1 (de) 2001-05-08 2002-02-11 Programmierverfahren für einen nichtflüchtigen halbleiterspeicher
KR10-2002-0024959A KR100446402B1 (ko) 2001-05-08 2002-05-07 불휘발성 반도체 기억 장치의 프로그램 방법
CNB021190542A CN1228786C (zh) 2001-05-08 2002-05-08 非易失性半导体存储器的编程方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001137165A JP4715024B2 (ja) 2001-05-08 2001-05-08 不揮発性半導体記憶装置のプログラム方法

Publications (3)

Publication Number Publication Date
JP2002334587A JP2002334587A (ja) 2002-11-22
JP2002334587A5 true JP2002334587A5 (OSRAM) 2008-06-19
JP4715024B2 JP4715024B2 (ja) 2011-07-06

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Family Applications (1)

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JP2001137165A Expired - Fee Related JP4715024B2 (ja) 2001-05-08 2001-05-08 不揮発性半導体記憶装置のプログラム方法

Country Status (7)

Country Link
US (1) US6587381B2 (OSRAM)
EP (1) EP1256960B1 (OSRAM)
JP (1) JP4715024B2 (OSRAM)
KR (1) KR100446402B1 (OSRAM)
CN (1) CN1228786C (OSRAM)
AT (1) ATE267447T1 (OSRAM)
DE (1) DE60200498T2 (OSRAM)

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JP3640175B2 (ja) * 2001-04-13 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2002334588A (ja) * 2001-05-11 2002-11-22 Seiko Epson Corp 不揮発性半導体記憶装置のプログラム方法
JP3716914B2 (ja) 2001-05-31 2005-11-16 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3659205B2 (ja) * 2001-08-30 2005-06-15 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその駆動方法
JP3843869B2 (ja) * 2002-03-15 2006-11-08 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3821032B2 (ja) * 2002-03-20 2006-09-13 セイコーエプソン株式会社 ファイルストレージ型不揮発性半導体記憶装置
JP3867624B2 (ja) * 2002-06-06 2007-01-10 セイコーエプソン株式会社 不揮発性半導体記憶装置およびその駆動方法
JP3815381B2 (ja) * 2002-06-06 2006-08-30 セイコーエプソン株式会社 不揮発性半導体記憶装置およびその駆動方法
JP3871049B2 (ja) * 2002-12-10 2007-01-24 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2004199738A (ja) * 2002-12-16 2004-07-15 Seiko Epson Corp 不揮発性記憶装置
JP3985689B2 (ja) * 2003-02-21 2007-10-03 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3873908B2 (ja) 2003-02-28 2007-01-31 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその製造方法
JP3786096B2 (ja) * 2003-02-28 2006-06-14 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3786095B2 (ja) * 2003-02-28 2006-06-14 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP3767588B2 (ja) * 2003-08-29 2006-04-19 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその制御方法
JP4196191B2 (ja) * 2003-09-09 2008-12-17 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその制御方法
US7120051B2 (en) * 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US7307882B2 (en) * 2005-06-29 2007-12-11 Macronix International Co., Ltd. Non-volatile memory
US7233528B2 (en) * 2005-07-25 2007-06-19 Atmel Corporation Reduction of programming time in electrically programmable devices
TWI265626B (en) * 2005-08-19 2006-11-01 Powerchip Semiconductor Corp Non-volatile memory and manufacturing method and operating method thereof
US7366013B2 (en) * 2005-12-09 2008-04-29 Micron Technology, Inc. Single level cell programming in a multiple level cell non-volatile memory device
US7349254B2 (en) * 2006-05-31 2008-03-25 Qimonda Flash Gmbh & Co. Kg Charge-trapping memory device and methods for its manufacturing and operation
KR101320519B1 (ko) 2006-07-27 2013-10-23 삼성전자주식회사 패스 트랜지스터를 갖는 비휘발성 메모리 소자 및 그 동작방법
CN101373636B (zh) * 2007-08-20 2010-12-22 中芯国际集成电路制造(上海)有限公司 防止存储器阵列产生位线干扰的方法
US7672163B2 (en) * 2007-09-14 2010-03-02 Sandisk Corporation Control gate line architecture
JP5266085B2 (ja) * 2009-02-17 2013-08-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR101849176B1 (ko) 2012-01-06 2018-04-17 삼성전자주식회사 2-트랜지스터 플래시 메모리 및 2-트랜지스터 플래시 메모리의 프로그램 방법
US20170006161A9 (en) * 2013-03-15 2017-01-05 Genesys Telecommunications Laboratories, Inc. Intelligent automated agent for a contact center
KR102083826B1 (ko) * 2013-05-13 2020-03-03 주식회사 실리콘웍스 표시 장치의 가비지 프로세싱 회로
US10074438B2 (en) 2016-06-10 2018-09-11 Cypress Semiconductor Corporation Methods and devices for reducing program disturb in non-volatile memory cell arrays
US9997253B1 (en) 2016-12-08 2018-06-12 Cypress Semiconductor Corporation Non-volatile memory array with memory gate line and source line scrambling
US11437392B2 (en) * 2020-07-28 2022-09-06 Globalfoundries Singapore Pte. Ltd. Compact memory cell with a shared conductive select gate and methods of making such a memory cell
US11309324B2 (en) * 2020-07-28 2022-04-19 Globalfoundries Singapore Pte. Ltd. Compact memory cell with a shared conductive word line and methods of making such a memory cell

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JP2001357681A (ja) * 2000-06-12 2001-12-26 Sony Corp 半導体記憶装置およびその駆動方法
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