JP2002289955A - 半導体レーザ素子とその製造方法および光学式情報再生装置 - Google Patents

半導体レーザ素子とその製造方法および光学式情報再生装置

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Publication number
JP2002289955A
JP2002289955A JP2001085248A JP2001085248A JP2002289955A JP 2002289955 A JP2002289955 A JP 2002289955A JP 2001085248 A JP2001085248 A JP 2001085248A JP 2001085248 A JP2001085248 A JP 2001085248A JP 2002289955 A JP2002289955 A JP 2002289955A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
laser device
thickness
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001085248A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002289955A5 (enExample
Inventor
Shigetoshi Ito
茂稔 伊藤
Yukio Yamazaki
幸生 山崎
Toshiyuki Kawakami
俊之 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2001085248A priority Critical patent/JP2002289955A/ja
Priority to US10/104,931 priority patent/US6865201B2/en
Publication of JP2002289955A publication Critical patent/JP2002289955A/ja
Publication of JP2002289955A5 publication Critical patent/JP2002289955A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
JP2001085248A 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置 Pending JP2002289955A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001085248A JP2002289955A (ja) 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置
US10/104,931 US6865201B2 (en) 2001-03-23 2002-03-22 Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001085248A JP2002289955A (ja) 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置

Publications (2)

Publication Number Publication Date
JP2002289955A true JP2002289955A (ja) 2002-10-04
JP2002289955A5 JP2002289955A5 (enExample) 2007-12-27

Family

ID=18940792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001085248A Pending JP2002289955A (ja) 2001-03-23 2001-03-23 半導体レーザ素子とその製造方法および光学式情報再生装置

Country Status (2)

Country Link
US (1) US6865201B2 (enExample)
JP (1) JP2002289955A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017791A (ja) * 2001-07-03 2003-01-17 Sharp Corp 窒化物半導体素子及びこの窒化物半導体素子の製造方法
US6987281B2 (en) * 2003-02-13 2006-01-17 Cree, Inc. Group III nitride contact structures for light emitting devices
JP2006135221A (ja) * 2004-11-09 2006-05-25 Mitsubishi Electric Corp 半導体発光素子
KR101283233B1 (ko) * 2007-06-25 2013-07-11 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5225639B2 (ja) * 2007-09-06 2013-07-03 浜松ホトニクス株式会社 半導体レーザ素子の製造方法
DE102017119931A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450586A (en) * 1987-08-21 1989-02-27 Fuji Electric Co Ltd Semiconductor laser
JPH06283758A (ja) * 1993-03-25 1994-10-07 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体ウエハーの切断方法
JPH1027939A (ja) * 1996-07-11 1998-01-27 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH10242587A (ja) * 1997-02-24 1998-09-11 Nichia Chem Ind Ltd 窒化物半導体素子及び半導体レーザダイオード
JPH11251682A (ja) * 1998-03-04 1999-09-17 Hitachi Ltd 半導体光素子
JPH11251265A (ja) * 1998-03-06 1999-09-17 Sony Corp 半導体装置およびその製造方法ならびに半導体装置製造用基板
JPH11251266A (ja) * 1998-02-27 1999-09-17 Victor Co Of Japan Ltd 粘着シ−ト

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005258A (en) * 1994-03-22 1999-12-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
ID16181A (id) * 1995-12-25 1997-09-11 Sony Corp Alat semi konduktor dengan permukaan terbelah
JPH10209569A (ja) * 1997-01-16 1998-08-07 Hewlett Packard Co <Hp> ｐ型窒化物半導体装置とその製造方法
US6194742B1 (en) * 1998-06-05 2001-02-27 Lumileds Lighting, U.S., Llc Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
TW488088B (en) * 2001-01-19 2002-05-21 South Epitaxy Corp Light emitting diode structure
TW492202B (en) * 2001-06-05 2002-06-21 South Epitaxy Corp Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge
TW515116B (en) * 2001-12-27 2002-12-21 South Epitaxy Corp Light emitting diode structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450586A (en) * 1987-08-21 1989-02-27 Fuji Electric Co Ltd Semiconductor laser
JPH06283758A (ja) * 1993-03-25 1994-10-07 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体ウエハーの切断方法
JPH1027939A (ja) * 1996-07-11 1998-01-27 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JPH10242587A (ja) * 1997-02-24 1998-09-11 Nichia Chem Ind Ltd 窒化物半導体素子及び半導体レーザダイオード
JPH11251266A (ja) * 1998-02-27 1999-09-17 Victor Co Of Japan Ltd 粘着シ−ト
JPH11251682A (ja) * 1998-03-04 1999-09-17 Hitachi Ltd 半導体光素子
JPH11251265A (ja) * 1998-03-06 1999-09-17 Sony Corp 半導体装置およびその製造方法ならびに半導体装置製造用基板

Also Published As

Publication number Publication date
US6865201B2 (en) 2005-03-08
US20020141468A1 (en) 2002-10-03

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